公开(公告)号：US20160157023A1

公开(公告)日：2016-06-02

申请号：US15017514

申请日：2016-02-05

Applicant: Omron Corporation ,  STMICROELECTRONICS S.R.L.

Inventor： Takashi KASAI ,  Shobu SATO ,  Yuki UCHIDA ,  Igino PADOVANI ,  Filippo DAVID ,  Sebastiano CONTI

IPC: H04R19/01 ,  H04R19/00 ,  H04R1/02

CPC classification number: H04R19/04 ,  B81B3/0021 ,  H04R1/023 ,  H04R1/086 ,  H04R3/00 ,  H04R3/005 ,  H04R19/005 ,  H04R19/016 ,  H04R31/00 ,  H04R2201/003 ,  H04R2499/11

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

公开(公告)号：US20180176693A1

公开(公告)日：2018-06-21

申请号：US15814256

申请日：2017-11-15

Applicant: STMICROELECTRONICS S.R.L. ,  OMRON CORPORATION

Inventor： Takashi KASAI ,  Shobu SATO ,  Yuki UCHIDA ,  Igino PADOVANI ,  Filippo DAVID ,  Sebastiano CONTI

IPC: H04R19/04 ,  H04R19/00 ,  H04R1/02 ,  H04R3/00 ,  H04R31/00 ,  H04R19/01 ,  B81B3/00 ,  H04R1/08

CPC classification number: H04R19/04 ,  B81B3/0021 ,  H04R1/023 ,  H04R1/086 ,  H04R3/00 ,  H04R3/005 ,  H04R19/005 ,  H04R19/016 ,  H04R31/00 ,  H04R2201/003 ,  H04R2499/11

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

公开(公告)号：US20160037266A1

公开(公告)日：2016-02-04

申请号：US14772108

申请日：2013-09-09

Applicant: OMRON Corporation

Inventor： Yuki UCHIDA

IPC: H04R19/04 ,  G10K11/00 ,  H04R3/06 ,  H04R3/00

CPC classification number: H04R19/04 ,  B81B3/00 ,  G10K11/002 ,  H04R1/04 ,  H04R1/245 ,  H04R3/002 ,  H04R3/005 ,  H04R3/06 ,  H04R7/06 ,  H04R19/005 ,  H04R2201/003 ,  H04R2410/03 ,  H04R2499/11

Abstract: A chamber that penetrates vertically is formed in a silicon substrate. A diaphragm is arranged on the upper surface of the silicon substrate so as to cover the upper opening of the chamber. The diaphragm is divided by slits into a region located above the chamber (first diaphragm) and a region located above the upper surface of the silicon substrate (second diaphragm). A fixed electrode plate is arranged above the first diaphragm, and a low-volume first acoustic sensing portion is formed by the first diaphragm and the fixed electrode plate. Also, a high-volume second acoustic sensing portion is formed by the second diaphragm and the upper surface (electrically conducting layer) of the silicon substrate.

Abstract translation: 在硅衬底中形成垂直穿透的室。 在硅衬底的上表面上设置隔膜以覆盖室的上开口。 隔膜由狭缝分隔成位于室（第一隔膜）上方的区域和位于硅基板（第二隔膜）上表面的区域。 固定电极板设置在第一隔膜的上方，第一隔膜和固定电极板形成小体积的第一声感测部。 而且，第二隔膜和硅基板的上表面（导电层）形成高体积的第二声感测部。

公开(公告)号：US20160192082A1

公开(公告)日：2016-06-30

申请号：US14972354

申请日：2015-12-17

Applicant: OMRON CORPORATION

Inventor： Yuki UCHIDA ,  Koji MOMOTANI ,  Takashi KASAI

IPC: H04R19/00 ,  H04R31/00 ,  H04R19/04

CPC classification number: H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003 ,  H04S7/00 ,  H04S2420/01

Abstract: An acoustic sensor is provided for improving shock resistance performance, along with a method for manufacturing the acoustic sensor. In the acoustic sensor, a fixing plate is provided by a semiconductor manufacturing process, a frame wall has a curved shape in at least a portion of the periphery of the fixing plate, the frame wall being coupled to the semiconductor substrate. A sacrifice layer removed from the inner side of the fixing plate in the manufacturing process remains at least on a portion of the inner side of the frame wall. Roughness of the remaining sacrifice layer is smaller than roughness of a sound shape reflecting structure in which a shape similar to the external shape of sound holes is repeated. Roughness of the sound shape reflecting structure is formed when removing the sacrifice layer using etching liquid supplied from the plurality of sound holes in the semiconductor manufacturing process.

Abstract translation: 提供一种用于改善抗冲击性能的声学传感器以及用于制造声学传感器的方法。 在声学传感器中，通过半导体制造工艺提供固定板，框架壁在固定板的周边的至少一部分中具有弯曲形状，框架壁耦合到半导体衬底。 在制造过程中从固定板的内侧移除的牺牲层至少保留在框架壁的内侧的一部分上。 剩余牺牲层的粗糙度小于重复与声孔的外部形状相似的形状的声音形状反射结构的粗糙度。 使用在半导体制造工序中从多个声孔供给的蚀刻液除去牺牲层时，形成声音形状反射结构的粗糙度。

公开(公告)号：US20160094918A1

公开(公告)日：2016-03-31

申请号：US14859474

申请日：2015-09-21

Applicant: OMRON Corporation

Inventor： Yuki UCHIDA ,  Koji MOMOTANI ,  Takashi KASAI

IPC: H04R19/04 ,  H03F3/181 ,  H04R3/00 ,  B06B1/02

CPC classification number: H04R19/005 ,  H04R19/013 ,  H04R19/016 ,  H04R2201/003

Abstract: An acoustic transducer includes a slit having higher passage resistance than in conventional structures and having a lower rate of decrease in the passage resistance than in conventional structures when, for example, the vibration electrode plate warps. The acoustic transducer includes a stationary electrode plate, and a vibration electrode plate facing the stationary electrode plate with a space between the electrode plates. The vibration electrode plate includes a slit that allows sound to pass through. The vibration electrode plate includes a resistance increasing section including at least one pair of high-resistance surfaces that constitute side surfaces of the slit in a width direction thereof, and are thicker than a middle portion of the vibration electrode plate.

Abstract translation: 声传感器包括具有比常规结构更高的通过电阻的狭缝，并且当例如振动电极板翘曲时，具有比常规结构中更低的通道阻力率。 声换能器包括固定电极板和面对固定电极板的振动电极板，在电极板之间具有空间。 振动电极板包括允许声音通过的狭缝。 该振动电极板包括电阻增加部分，该电阻增加部分包括至少一对构成狭缝在其宽度方向上的侧表面的高电阻表面，并且比振动电极板的中间部分更厚。

公开(公告)号：US20160021459A1

公开(公告)日：2016-01-21

申请号：US14773451

申请日：2013-09-09

Applicant: OMRON CORPORATION

Inventor： Tadashi INOUE ,  Takashi KASAI ,  Yuki UCHIDA

IPC: H04R7/18 ,  H04R19/04

CPC classification number: H04R7/18 ,  B81B7/0006 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2207/07 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/15151 ,  H01L2924/16152 ,  H04R19/005 ,  H04R19/04 ,  H04R2410/03 ,  H01L2924/00014

Abstract: A diaphragm is arranged on the upper surface of a silicon substrate so as to cover a chamber in the silicon substrate. Multiple anchors are provided on the upper surface of the silicon substrate, and the lower surfaces of corner portions of the diaphragm are supported by the anchors. Also, a fixed electrode plate is provided above the diaphragm with an air gap therebetween. In a view from a direction perpendicular to the upper surface of the silicon substrate, the entire length of the outer edge of the diaphragm located between adjacent anchors is located outward of a line segment that circumscribes the edges of the adjacent anchors on the side distant from the center of the diaphragm. Also, one or two or more through-holes are formed in the diaphragm in the vicinity of the anchors.

Abstract translation: 在硅衬底的上表面上设置隔膜以覆盖硅衬底中的室。 在硅基板的上表面上设置有多个锚，并且隔膜的角部的下表面被锚固件支撑。 此外，固定电极板设置在隔膜的上方，其间具有气隙。 在从垂直于硅衬底的上表面的方向看来，位于相邻锚固件之间的隔膜的外边缘的整个长度位于一个线段的外侧，该线段在相邻的锚定件的边缘远离 隔膜的中心。 此外，在隔膜附近形成有一个或两个以上的通孔。