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公开(公告)号：US11962122B2
公开(公告)日：2024-04-16
申请号：US17260890
申请日：2019-07-10
发明人： Hiroyuki Hagino , Shinichiro Nozaki
IPC分类号： H01S5/024 , H01S5/02 , H01S5/0237 , H01S5/0239 , H01S5/14 , H01S5/40
CPC分类号： H01S5/02469 , H01S5/0207 , H01S5/0237 , H01S5/0239 , H01S5/02461 , H01S5/141 , H01S5/4087 , H01S5/40 , H01S5/4062
摘要： A semiconductor light emitting device includes: a semiconductor light emitting element including a substrate and a plurality of light emitters arranged along an upper surface of the substrate; a first base disposed below a lower surface of the substrate; and a first bonding layer which bonds the semiconductor light emitting element to the first base. In the semiconductor light emitting device, a thermal conductivity of the substrate is higher than a thermal conductivity of the first bonding layer, and a thickness of the first bonding layer is less on one end side than on an other end side in an arrangement direction in which the plurality of light emitters are arranged.
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公开(公告)号：US10141720B2
公开(公告)日：2018-11-27
申请号：US15865447
申请日：2018-01-09
摘要： A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1−xN containing no Indium, where 0≤x
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公开(公告)号：US10581218B2
公开(公告)日：2020-03-03
申请号：US15986153
申请日：2018-05-22
发明人： Shinichiro Nozaki
摘要： A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.
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4.发明授权Nitride semiconductor light emitting device and method of manufacturing the same 有权氮化物半导体发光器件及其制造方法公开(公告)号：US09006778B2
公开(公告)日：2015-04-14
申请号：US13675929
申请日：2012-11-13
CPC分类号： H01L33/22 , H01S5/0207 , H01S5/021 , H01S5/3203 , H01S5/32341 , H01S5/4031 , H01S2301/173
摘要： A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer of a second conductive type formed on the light emitting layer, wherein each protrusion has a bottom made of a material or composition having a thermal expansion coefficient larger than the thermal expansion coefficient of the material or composition of the first nitride semiconductor layer.
摘要翻译： 一种氮化物半导体发光器件包括：具有不平坦结构的不平坦衬底，其中形成有凹部; 形成在所述凹凸结构上的第一导电类型的第一氮化物半导体层; 形成在第一氮化物半导体层上的第一发光层; 以及形成在发光层上的第二导电类型的第二氮化物半导体层，其中每个突起具有由热膨胀系数大于第一氮化物的材料或组成的热膨胀系数的材料或组合物制成的底部 半导体层。
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公开(公告)号：US11451010B2
公开(公告)日：2022-09-20
申请号：US16641981
申请日：2018-08-02
发明人： Shinichiro Nozaki , Takuma Katayama
摘要： A semiconductor light-emitting element includes: an n-type cladding layer formed of a nitride semiconductor; an active layer which is arranged above the n-type cladding layer and formed of a nitride semiconductor; a p-type cladding layer arranged above the active layer and formed of a nitride semiconductor; and a p-side electrode arranged above the p-type cladding layer, wherein the p-type cladding layer contains hydrogen, and a first concentration of the hydrogen at a center of the p-type cladding layer in a region below the p-side electrode is lower than a second concentration of the hydrogen at a position located on a side closer to an outer edge than to the center in the region below the p-side electrode.
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公开(公告)号：US11018472B2
公开(公告)日：2021-05-25
申请号：US16752504
申请日：2020-01-24
发明人： Shinichiro Nozaki
IPC分类号： H01S5/023 , H01S5/40 , H01S5/0233 , H01S5/22 , H01S5/02345 , H01S5/0235 , H01S5/024 , H01S5/02212 , H01S5/0237 , H01S5/34 , H01S5/343
摘要： A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.
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公开(公告)号：US20180131161A1
公开(公告)日：2018-05-10
申请号：US15865447
申请日：2018-01-09
CPC分类号： H01S5/2009 , H01S5/02276 , H01S5/026 , H01S5/22 , H01S5/323 , H01S5/343 , H01S5/34333
摘要： A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1−xN containing no Indium, where 0 ≤x
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公开(公告)号：US10892597B2
公开(公告)日：2021-01-12
申请号：US16316602
申请日：2017-06-28
摘要： A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO2. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.
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