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    IMAGING DEVICE
    3.
    发明申请
    IMAGING DEVICE 审中-公开

    公开(公告)号：US20200321385A1

    公开(公告)日：2020-10-08

    申请号：US16909070

    申请日：2020-06-23

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Junji HIRASE ,  Yoshinori TAKAMI ,  Shota YAMADA ,  Yoshihiro SATO ,  Yoshiaki SATOU

    IPC: H01L27/146 ,  H01L27/148

    Abstract: An imaging device including a semiconductor substrate having a first surface, the semiconductor substrate including: a first layer containing an impurity of a first conductivity type; a second layer containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer to the first surface than the first layer is; and a pixel. The pixel includes a photoelectric converter configured to convert light into charge; and a first diffusion region containing an impurity of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge. The first layer having a second surface adjacent to the second layer, the second surface including a convex portion toward the first surface, and the convex portion facing the first diffusion region.

    SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE DEVICE
    4.
    发明申请
    SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE DEVICE 有权
    固态成像装置及其制造方法

    公开(公告)号：US20150090998A1

    公开(公告)日：2015-04-02

    申请号：US14565212

    申请日：2014-12-09

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Junji HIRASE ,  Yoshiyuki MATSUNAGA ,  Yoshihiro SATO

    IPC: H01L27/146 ,  H01L51/42

    CPC classification number: H01L27/14614 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14669 ,  H01L51/428 ,  H04N5/363 ,  H04N5/378

    Abstract: Each unit pixel includes a photoelectric converter formed above a semiconductor region, an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter, a reset transistor configured to reset a potential of the gate electrode, and an isolation region formed in the semiconductor region between the amplifier transistor and the reset transistor to electrically isolate the amplifier transistor from the reset transistor. The amplifier transistor includes a source/drain region. The source/drain region has a single source/drain structure.

    Abstract translation: 每个单位像素包括形成在半导体区域上方的光电转换器，形成在半导体区域中的放大器晶体管，并且包括连接到光电转换器的栅极电极，配置为复位栅电极的电位的复位晶体管，以及隔离区域 形成在放大器晶体管和复位晶体管之间的半导体区域中，以将放大器晶体管与复位晶体管电隔离。 放大器晶体管包括源极/漏极区域。 源极/漏极区域具有单个源极/漏极结构。

    IMAGING DEVICE AND CAMERA SYSTEM
    6.
    发明申请
    IMAGING DEVICE AND CAMERA SYSTEM 有权

    公开(公告)号：US20210082977A1

    公开(公告)日：2021-03-18

    申请号：US17095019

    申请日：2020-11-11

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Junji HIRASE ,  Masashi MURAKAMI

    IPC: H01L27/146 ,  H04N5/369 ,  G02B7/04 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/363

    Abstract: An imaging device including: a pixel including a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion film, the photoelectric conversion film converting light into a charge; a first transistor having a first source, a first drain, a first gate insulating film, and a first gate, one of the first source and the first drain being connected to the pixel electrode; and a second transistor having a second source, a second drain, a second gate insulating film, and a second gate, one of the second source and the second drain being connected to the other of the first source and the first drain without transistor intervention. An effective thickness of the second gate insulting film is smaller than an effective thickness of the first gate insulting film, and the imaging device includes pixels including the pixel, the pixels each including the first and second transistor.

    IMAGING DEVICE
    8.
    发明申请
    IMAGING DEVICE 审中-公开

    公开(公告)号：US20180114812A1

    公开(公告)日：2018-04-26

    申请号：US15851238

    申请日：2017-12-21

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Yoshihiro SATO ,  Junji HIRASE

    IPC: H01L27/146

    CPC classification number: H01L27/14665 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/307

    Abstract: An imaging device including a unit pixel cell including a semiconductor substrate having a surface including a first area and a second area surrounded by the first area. The semiconductor substrate including a first region of a first conductivity type exposed to the surface in the first area, and a second region of a second conductivity type directly adjacent to the first region and exposed to the surface in the second area; a photoelectric converter; an amplifier; a contact plug connected to the second region; a first transistor including a first electrode; a second electrode covering a second portion of the first area; and a second insulation layer between the second electrode and the semiconductor substrate. When viewed in a direction perpendicular to the surface of the semiconductor substrate, a contact between the second region and the contact plug is located between the first electrode and the second electrode.

    IMAGING DEVICE INCLUDING SIGNAL LINE AND UNIT PIXCEL CELL INCLUDING CHARGE STORAGE REGION
    9.
    发明申请
    IMAGING DEVICE INCLUDING SIGNAL LINE AND UNIT PIXCEL CELL INCLUDING CHARGE STORAGE REGION 有权

    公开(公告)号：US20250056134A1

    公开(公告)日：2025-02-13

    申请号：US18928978

    申请日：2024-10-28

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Yoshihiro SATO ,  Junji HIRASE

    IPC: H04N25/65 ,  H01L27/146 ,  H04N25/63 ,  H04N25/75 ,  H04N25/76

    Abstract: A camera system including an optical system; and an imaging device that receives a light through the optical system. The imaging device includes a semiconductor substrate; pixels; and a signal line located along the pixels. Each pixel includes a photoelectric converter that generates signal charge by photoelectric conversion, a first transistor that outputs a signal to the signal line according to an amount of the signal charge, and a circuit that is coupled to a gate of the first transistor and that includes a capacitive element and a second transistor. The signal line is positioned in proximity to the semiconductor. The capacitive element is further away from the semiconductor substrate compared to the signal line. The gate of the first transistor is coupled to the capacitive element through the second transistor, and the gate of the first transistor is coupled to the photoelectric converter not through the second transistor.

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