-
公开(公告)号：US20180292347A1
公开(公告)日：2018-10-11
申请号：US16005995
申请日：2018-06-12
Inventor： Toru OKINO , Yutaka HIROSE , Yoshihisa KATO , Akio OKI
IPC: G01N27/403
Abstract: A gas sensor includes: a cell array which includes a plurality of cells disposed in rows and columns; a read-out circuit which reads out signals from the plurality of cells; and a signal processor which processes the signals read out. Each of the plurality of cells includes: a gas molecule detector which is electrically isolated between adjacent ones of the plurality of cells; and an amplifier circuit which is electrically connected to the gas molecule detector.
-
2.发明申请公开(公告)号：US20190049710A1
公开(公告)日：2019-02-14
申请号：US16161545
申请日：2018-10-16
Inventor： Hideto MOTOMURA , Yasuhiko ADACHI , Yoshihisa KATO
Abstract: An image forming apparatus includes an imager that is electrically connected to an image sensor disposed at a position where light that has passed through a sample slice is incident on the image sensor, and an illumination system that emits illumination light successively in different illumination directions relative to a sample slice to illuminate the sample slice with the illumination light and that emits a first light having a peak in a first wavelength range and a second light having a peak in a second wavelength range. The image forming apparatus obtains a plurality of first-color images with the image sensor while the sample slice is being illuminated with the first light serving as the illumination light successively in the different illumination directions. The image forming apparatus obtains at least one second-color image with the image sensor while the sample slice is being illuminated with the second light in at least one of the different illumination directions. The image forming apparatus generates a high-resolution image on the basis of the plurality of first-color images and the at least one second-color image.
-
公开(公告)号：US20180197905A1
公开(公告)日：2018-07-12
申请号：US15913106
申请日：2018-03-06
Inventor： Yusuke SAKATA , Manabu USUDA , Mitsuyoshi MORI , Yoshihisa KATO
IPC: H01L27/146 , H01L31/107 , H04N5/374
CPC classification number: H01L27/1463 , H01L27/14612 , H01L27/1464 , H01L27/14643 , H01L31/00 , H01L31/107 , H01L31/1075 , H04N5/369 , H04N5/374 , H04N5/378
Abstract: A solid-state imaging device includes a substrate of P type and a wiring layer. The substrate includes: a first semiconductor region disposed on a first principle surface and extending in a direction from the first principal surface toward the second principal surface; a second semiconductor region disposed between the second principal surface and the first semiconductor region and connected to the first semiconductor region; a P type semiconductor region disposed between the second principal surface and the second semiconductor regions of two pixels; and a pixel isolation region disposed inside the substrate, between the first semiconductor regions of the two pixels. The second semiconductor region and the P type semiconductor region form an avalanche multiplication region.
-
Patent Agency Ranking
公开(公告)号：US20170229599A1
公开(公告)日：2017-08-10
申请号：US15328648
申请日：2015-07-09
Inventor： Yusuke SAKATA , Manabu USUDA , Mitsuyoshi MORI , Yutaka HIROSE , Yoshihisa KATO
IPC: H01L31/107 , H01L27/146
CPC classification number: H01L31/1075 , H01L27/14609 , H01L27/1461 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14647 , H01L31/107 , H02S40/44
Abstract: A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p− type semiconductor layer having interfaces; an n+ type semiconductor region located inside the p− type semiconductor layer and in contact with the interface; an n+ type semiconductor region located inside the p− type semiconductor layer and connected to the n+ type semiconductor region; and a p type semiconductor region located between the n+ type semiconductor region and the interface, wherein the n+ type semiconductor region, the n+ type semiconductor region, and the p type semiconductor region each have a higher impurity concentration than the p− type semiconductor layer, the avalanche region is a region between the n+ type semiconductor region and the p type semiconductor region inside the p− type semiconductor layer, and the n+ type semiconductor region has a smaller area than the n+ type semiconductor region in planar view.
-
公开(公告)号：US20170187939A1
公开(公告)日：2017-06-29
申请号：US15461159
申请日：2017-03-16
Inventor： Shigetaka KASUGA , Seiji YAMAHIRA , Yoshihisa KATO
Abstract: A solid-state imaging device includes a detector, a count value storage, and a reader. The detector includes an avalanche amplification type light receiving element that detects a photon, and a resetter that resets an output potential of the light receiving element, and outputs a digital signal that indicates the presence or absence of incidence of a photon on the light receiving element. The count value storage performs counting by converting the digital signal output from the detector to an analog voltage, and stores the result of counting as a count value. The reader outputs an analog signal indicating the count value.
-
公开(公告)号：US20170094206A1
公开(公告)日：2017-03-30
申请号：US15377613
申请日：2016-12-13
Inventor： Keisuke YAZAWA , Motonori ISHII , Yutaka HIROSE , Yoshihisa KATO , Yoshiyuki MATSUNAGA
CPC classification number: H04N5/363 , H01L27/307 , H04N5/374 , H04N5/3741 , H04N5/3745 , H04N5/378
Abstract: A solid-state imaging apparatus includes a pixel including: a photoelectric converter that generates a signal charge corresponding to incident light; a charge storage section that is connected to the photoelectric converter and accumulates signal charge; a reset transistor; an amplifying transistor; and a cutoff transistor, wherein the amplifying transistor and the cutoff transistor form a negative feedback amplifying circuit.
-
公开(公告)号：US20180019546A1
公开(公告)日：2018-01-18
申请号：US15711173
申请日：2017-09-21
Inventor： Yutaka HIROSE , Yoshihisa KATO , Hiroyuki MORI , Taichi SATO , Yoshihide SAWADA , Tsuyoshi TANAKA
IPC: H01R13/64 , B01L9/00 , H04N1/031 , H01R13/73 , H01R13/639 , H04N5/225 , H01L27/146 , G02B21/34 , G02B21/00 , F16M11/10 , F16M11/04 , H04N5/372 , H01L27/148
CPC classification number: H01R13/64 , B01L9/52 , B01L2300/0645 , B01L2300/0654 , B01L2300/0822 , F16M11/046 , F16M11/10 , G02B21/0008 , G02B21/34 , H01L27/14623 , H01L27/14818 , H01R13/639 , H01R13/73 , H04N1/0315 , H04N1/0318 , H04N5/2257 , H04N5/372
Abstract: A socket includes a first base member that includes a module mount unit allowing a module including an imaging device and an object to be placed thereon and an electric connector that electrically connects the imaging device to an external apparatus, a second base member having an opening, and an engagement unit that causes the first base member to be engaged with the second base member under a condition that the module placed on the module mount unit is sandwiched by the first and second base members. When the first base member is engaged with the second base member by the engagement unit under a condition that the module placed on the module mount unit is sandwiched by the first base member and the second base member, the electric connector is electrically connected to the imaging device, and the object receives illumination light from a light source through the opening.
-
8.发明申请公开(公告)号：US20170241898A1
公开(公告)日：2017-08-24
申请号：US15589661
申请日：2017-05-08
Inventor： Toru OKINO , Shota YAMADA , Yutaka HIROSE , Yoshihisa KATO , Tsuyoshi TANAKA , Manabu KAMOSHIDA , Hideto MOTOMURA , Yoshihide SAWADA
IPC: G01N21/01 , H01L27/146 , G01N21/84
CPC classification number: G01N21/01 , G01N21/84 , H01L27/14603 , H01L27/14636
Abstract: An electronic prepared slide includes: an image sensor that has a light receiving surface and receives, on the light receiving surface, light that has passed through a specimen disposed above the light receiving surface; and a removable nonvolatile transparent film that is disposed on the light receiving surface and seals the light receiving surface.
-
-
-
-
-
-
-
Search Results
8
records
(took 0.015 seconds)
