DRAM interface circuits having enhanced skew, slew rate and impedance control
    1.
    发明授权
    DRAM interface circuits having enhanced skew, slew rate and impedance control 有权
    具有增强的偏移,转换速率和阻抗控制的DRAM接口电路

    公开(公告)号:US07079446B2

    公开(公告)日:2006-07-18

    申请号:US10916901

    申请日:2004-08-12

    IPC分类号: G11C8/00

    CPC分类号: G11C7/22

    摘要: Fully-buffered dual in-line memory modules (FB-DIMM) include advanced memory buffers (AMBs) having enhanced skew, slew rate and output impedance control. The AMB includes user accessible registers that can be programmed to carefully control the edge placement (or phase) of signals generated from the AMB to multiple DRAMs on the module. This control of edge placement, which may be performed independently for each group of signals: clock (CLK, CLK#), command (RAS, CAS, WE), address (including bank address), data (DQ) and data strobe (DQS), provides 360 degrees of control (or one period). This means that any group of signals can be moved independently by one complete period relatively to any other group.

    摘要翻译: 全缓冲双列直插式存储器模块(FB-DIMM)包括具有增强的偏移,转换速率和输出阻抗控制的高级存储器缓冲器(AMB)。 AMB包括可以编程的用户可访问寄存器,以便仔细地控制从AMB生成的信号到模块上的多个DRAM的边缘放置(或相位)。 时钟(CLK,CLK#),命令(RAS,CAS,WE),地址(包括存储体地址),数据(DQ)和数据选通(DQS)的每组信号可以独立执行边缘放置的这种控制 ),提供360度的控制(或一个周期)。 这意味着任何一组信号可以相对于任何其他组独立地移动一整个周期。

    Redundancy circuit and method for providing word lines driven by a shift
register
    2.
    发明授权
    Redundancy circuit and method for providing word lines driven by a shift register 失效
    用于提供由移位寄存器驱动的字线的冗余电路和方法

    公开(公告)号:US5812465A

    公开(公告)日:1998-09-22

    申请号:US691357

    申请日:1996-08-02

    IPC分类号: G11C29/00 G11C7/00

    CPC分类号: G11C29/785 G11C29/832

    摘要: The present invention disables defective rows in a FIFO or other buffer where the word lines of the FIFO buffer are driven by a shift register scheme. Additional enabled rows may be placed within the normal memory array. The additional enabled rows are substituted, as needed, for one or more defective rows. As a result, a defective row can be disabled without effecting the operation of the FIFO, particularly the read or write data path. In one example, the disabling effect is achieved by using one or more laser fuses. The present invention can be used to effectively bypass any single shift register element or a multiple number of shift register elements.

    摘要翻译: 本发明禁止FIFO或其他缓冲器中的有缺陷的行,其中FIFO缓冲器的字线由移位寄存器方案驱动。 额外启用的行可以放置在正常的存储器阵列内。 根据需要,对一个或多个有缺陷的行替换附加的已启用的行。 结果,可以禁用有缺陷的行,而不影响FIFO的操作,特别是读或写数据路径。 在一个示例中,通过使用一个或多个激光熔丝来实现禁用效果。 本发明可用于有效地绕过任何单个移位寄存器元件或多个移位寄存器元件。

    Multiple word width memory array clocking scheme for reading words from
a memory array
    3.
    发明授权
    Multiple word width memory array clocking scheme for reading words from a memory array 失效
    用于从存储器阵列读取字的多字宽存储器阵列时钟方案

    公开(公告)号:US5682356A

    公开(公告)日:1997-10-28

    申请号:US584530

    申请日:1996-01-11

    申请人: Roland T. Knaack

    发明人: Roland T. Knaack

    IPC分类号: G11C7/10 G11C7/00 H01L27/10

    CPC分类号: G11C7/1006

    摘要: The present invention provides a circuit for distributing data from a number of individual memory cells in a memory array to a common output. The present invention uses a multi-bit counter to distribute a timing signal to a number of sense amplifier blocks. Each of the sense amplifier blocks receives both a data input signal from the memory array and the timing signal at all times. When a particular timing signal is present at a sense amplifier, the output signal containing a fixed width data word is received from the corresponding memory array and is presented to the output. The present invention reduces the number of internal signal lines necessary to implement the control function and allows for easy modification to read multiple width words from the memory array.

    摘要翻译: 本发明提供一种用于将数据从存储器阵列中的多个单独存储单元分配到公共​​输出的电路。 本发明使用多位计数器将定时信号分配到多个读出放大器块。 每个读出放大器块一直接收来自存储器阵列的数据输入信号和定时信号。 当在读出放大器上存在特定定时信号时,从相应的存储器阵列接收包含固定宽度数据字的输出信号,并将其提供给输出。 本发明减少了实现控制功能所需的内部信号线的数量,并且允许容易地从存储器阵列读取多个宽度字的修改。

    Programmable clock drivers that support CRC error checking of configuration data during program restore operations
    4.
    发明授权
    Programmable clock drivers that support CRC error checking of configuration data during program restore operations 有权
    可编程时钟驱动程序,支持在程序还原操作期间对配置数据进行CRC错误检查

    公开(公告)号:US07196562B1

    公开(公告)日:2007-03-27

    申请号:US10979979

    申请日:2004-11-03

    IPC分类号: H03L7/06

    摘要: A packaged integrated circuit device includes a nonvolatile memory device and a programmable clock driver circuit therein. The memory device may be provided as an EEPROM device that is disposed on a first integrated circuit substrate and the programmable clock driver circuit may be disposed on a second integrated circuit substrate. The programmable clock driver circuit includes a control circuit and a clock generator therein. The control circuit is configured to detect an error(s) in configuration data that is used by the programmable clock driver circuit. This configuration data is read from the nonvolatile memory and stored in volatile program registers during program restore operations. The control circuit is further configured to automatically idle the clock generator in response to detecting the error in the configuration data. This automatic idling of the clock generator may include operations to set the clock generator at a default setting (e.g., minimum frequency), which applies to all output banks of the driver circuit.

    摘要翻译: 封装的集成电路器件包括非易失性存储器件和其中的可编程时钟驱动器电路。 存储器件可以被提供为设置在第一集成电路衬底上的EEPROM器件,并且可编程时钟驱动器电路可以被布置在第二集成电路衬底上。 可编程时钟驱动电路包括控制电路和时钟发生器。 控制电路被配置为检测由可编程时钟驱动器电路使用的配置数据中的错误。 在程序恢复操作期间,从非易失性存储器读取该配置数据并存储在易失性程序寄存器中。 控制电路还被配置为响应于检测到配置数据中的错误而自动地使时钟发生器空闲。 时钟发生器的这种自动空闲可以包括将时钟发生器设置为适用于驱动器电路的所有输出组的默认设置(例如,最小频率)的操作。

    Redundancy method and circuit for self-repairing memory arrays
    6.
    发明授权
    Redundancy method and circuit for self-repairing memory arrays 失效
    用于自修复存储器阵列的冗余方法和电路

    公开(公告)号:US5968190A

    公开(公告)日:1999-10-19

    申请号:US741953

    申请日:1996-10-31

    申请人: Roland T. Knaack

    发明人: Roland T. Knaack

    IPC分类号: G11C29/00 G01R31/28

    CPC分类号: G11C29/789 G11C29/4401

    摘要: The present invention concerns a circuit and method to automatically test and disable defective rows in a FIFO or other buffer where the wordlines or rows of the FIFO buffer are driven by a shift register scheme. Additional enabled rows may be placed within the normal memory array. The additional enabled rows are substituted, as needed, for one or more defective rows. As a result, a defective row can be automatically disabled without effecting the operation of the FIFO, particularly the read or write data path. In one example, the disabling effect is achieved by using a comparison circuit to determine if the words read from the memory are accurate. The present invention can be used to effectively bypass any single shift register element or a multiple number of shift register elements.

    摘要翻译: 本发明涉及一种在FIFO或其他缓冲器中自动测试和禁用有缺陷的行的电路和方法,其中FIFO缓冲器的字线或行由移位寄存器方案驱动。 额外启用的行可以放置在正常的存储器阵列内。 根据需要,对一个或多个有缺陷的行替换附加的已启用的行。 结果,可以自动禁用有缺陷的行,而不影响FIFO的操作,特别是读或写数据路径。 在一个示例中,通过使用比较电路来确定从存储器读取的单词是否准确,可以实现禁用效果。 本发明可用于有效地绕过任何单个移位寄存器元件或多个移位寄存器元件。

    Testing method for FIFOS
    7.
    发明授权
    Testing method for FIFOS 失效
    FIFOS测试方法

    公开(公告)号:US5642318A

    公开(公告)日:1997-06-24

    申请号:US567544

    申请日:1995-12-05

    IPC分类号: G11C29/00 G11C29/46 G11C7/00

    CPC分类号: G11C29/46 G11C29/003

    摘要: The present invention provides a system for testing a memory array and corresponding support circuitry. The present invention provides a highly efficient testing mode to be entered that allows any type of advanced testing to be performed on the memory array without regard to the restrictions imposed by the various status flags that may be present. The testing mode can be entered by a completely user-defined mechanism. During this testing mode, the user has complete control over the contents of the memory array and can also have complete control over the positioning of the write word line with respect to the read word line without, for example, any write-read word line pointer equality signals being generated. In one example of the present invention used in a FIFO, testing times required for data retention testing are reduced from approximately six seconds to approximately 500.mu. seconds for each part tested, since the entire internal memory core of the FIFO can be tested in a single pass without regard to the external depth of the FIFO.

    摘要翻译: 本发明提供了一种用于测试存储器阵列和相应的支持电路的系统。 本发明提供一种要输入的高效测试模式,其允许对存储器阵列执行任何类型的高级测试,而不考虑可能存在的各种状态标志所施加的限制。 可以通过完全由用户定义的机制输入测试模式。 在该测试模式期间,用户可以完全控制存储器阵列的内容,并且还可以完全控制写字线相对于读字线的位置,而不需要例如任何写读字线指针 生成相等信号。 在FIFO中使用的本发明的一个示例中,对于每个测试部分,数据保持测试所需的测试时间从大约六秒减少到大约500μs,因为FIFO的整个内部存储器核心可以在单个 通过而不考虑FIFO的外部深度。

    Integrated circuit memory devices having partitioned multi-port memory
arrays therein for increasing data bandwidth and methods of operating
same
    8.
    发明授权
    Integrated circuit memory devices having partitioned multi-port memory arrays therein for increasing data bandwidth and methods of operating same 失效
    具有分割多端口存储器阵列的集成电路存储器件用于增加数据带宽以及其操作方法

    公开(公告)号:US5978307A

    公开(公告)日:1999-11-02

    申请号:US82856

    申请日:1998-05-21

    摘要: Multi-port memory arrays having partitioned registers therein are provided. The registers are partitioned into subarrays so that at least two columns of a selected register can be simultaneously written to (or read from) using first and second input/output driver circuits. These first and second input/output driver circuits are electrically coupled to respective read and write data ports at opposing ends of the memory array. Control logic and first and second input/output driver circuits are provided for writing a first portion of a word of data into a first subarray while simultaneously writing a second portion of the word of data into a second subarray. Here, the first and second portions may comprise the least significant and most significant bytes of the word of data. The first input/output driver circuit is also electrically coupled to first read and write data lines at a first end of the memory array and the second input/output driver circuit is electrically coupled to second read and write data lines at a second end of the memory array. A data flow control circuit containing a crosspoint switch is also provided for routing input and output data between input and output registers and the first and second input/output driver circuits. The data flow control circuit, preferred arrangement of memory cells and dual input/output driver circuits also enables 2.times., 1.times. and 1/2.times. word width capability which can be selected by a user, for example.

    摘要翻译: 提供其中具有分区寄存器的多端口存储器阵列。 这些寄存器被划分为子阵列,使得可以使用第一和第二输入/输出驱动器电路同时将所选寄存器的至少两列同时写入(或从中读取)。 这些第一和第二输入/输出驱动器电路电耦合到存储器阵列的相对端处的相应的读取和写入数据端口。 提供控制逻辑和第一和第二输入/输出驱动器电路,用于将数据字的第一部分写入第一子阵列,同时将数据字的第二部分写入第二子阵列。 这里,第一和第二部分可以包括数据字的最低有效字节和最高有效字节。 第一输入/输出驱动器电路还在存储器阵列的第一端处电耦合到第一读取和写入数据线,并且第二输入/输出驱动器电路在第二输入/输出驱动器电路的第二端处电耦合到第二读取和写入数据线 内存阵列 还提供了包含交叉点开关的数据流控制电路,用于在输入和输出寄存器以及第一和第二输入/输出驱动器电路之间路由输入和输出数据。 数据流控制电路,存储单元和双输入/输出驱动器电路的优选布置还使得可以由用户选择的2x,1x和+ E,fra1 / 2 + EE×字宽度能力。

    Multiple word width memory array clocking scheme for reading words from
a memory array
    9.
    发明授权
    Multiple word width memory array clocking scheme for reading words from a memory array 失效
    用于从存储器阵列读取字的多字宽存储器阵列时钟方案

    公开(公告)号:US5828617A

    公开(公告)日:1998-10-27

    申请号:US852992

    申请日:1997-05-08

    申请人: Roland T. Knaack

    发明人: Roland T. Knaack

    IPC分类号: G11C7/10 G11C7/00

    CPC分类号: G11C7/1006

    摘要: The present invention provides a circuit for distributing data from a number of individual memory cells in a memory array to a common output. The present invention uses a multi-bit counter to distribute a timing signal to a number of sense amplifier blocks. Each of the sense amplifier blocks receives both a data input signal from the memory array and the timing signal at all times. When a particular timing signal is present at a sense amplifier, the output signal containing a fixed width data word is received from the corresponding memory array and is presented to the output. The present invention reduces the number of internal signal lines necessary to implement the control function and allows for easy modification to read multiple width words from the memory array.

    摘要翻译: 本发明提供一种用于将数据从存储器阵列中的多个单独存储单元分配到公共​​输出的电路。 本发明使用多位计数器将定时信号分配到多个读出放大器块。 每个读出放大器块一直接收来自存储器阵列的数据输入信号和定时信号。 当在读出放大器上存在特定定时信号时,从相应的存储器阵列接收包含固定宽度数据字的输出信号,并将其提供给输出。 本发明减少了实现控制功能所需的内部信号线的数量,并且允许容易地从存储器阵列读取多个宽度字的修改。

    Circuit and method for instruction controllable slewrate of bit line
driver
    10.
    发明授权
    Circuit and method for instruction controllable slewrate of bit line driver 失效
    位线驱动器的指令控制摆幅电路及方法

    公开(公告)号:US5777944A

    公开(公告)日:1998-07-07

    申请号:US720116

    申请日:1996-09-27

    摘要: A bit line driver circuit includes a first driver and a second driver. The first driver drives a bit line when the bit line driver is in a first state. The second driver drives the bit line when the bit line driver is in a second state. The first driver is configured to produce a slow slew rate for the bit line and the second driver is configured to produce a faster slew rate for the bit line. The first and second drivers may include a first and second pair of driver transistors which are each coupled to the bit line. The states of the bit line driver circuit may be defined by instruction signals applied to the driver circuit and the driver circuit includes decoder logic to interface the instruction to the first and second pairs of driver transistors.

    摘要翻译: 位线驱动电路包括第一驱动器和第二驱动器。 当位线驱动器处于第一状态时,第一个驱动器驱动位线。 当位线驱动器处于第二状态时,第二个驱动器驱动位线。 第一个驱动器被配置为产生位线的慢速转换速率,第二个驱动器被配置为为位线产生更快的转换速率。 第一和第二驱动器可以包括第一和第二对驱动器晶体管,每个驱动晶体管都耦合到位线。 位线驱动器电路的状态可以由施加到驱动器电路的指令信号来定义,并且驱动器电路包括将指令与第一和第二对驱动晶体管对接的解码器逻辑。