摘要:
The invention relates to a controller for generating control signals (evload_o, odload_o, st_chgclk_o, clk_o , clkorfiford_i) synchronous with a continuous clock signal (clk_hr_i) input to it for a device (1) to be controlled synchronously with the clock signal (clk_hr_i), wherein the controller (SE) has: register means for registering at least one set signal (st_load_i, st_fiford_i), comprising a plurality of bit positions, counting means for counting edges of the clock signal (clk_hr_i) depending on one or a plurality of set signals respectively registered in the register means, and synchronization and output means for synchronizing a value counted by the counting means with the clock signal (clk_hr_i) and the registered set signal and outputting at least one of the control signals, wherein the register means, the counting means and the synchronization and output means are configured and connected to one another in such a way that the output control signal(s), depending on the respectively registered set signal, occupies (occupy) one of a plurality of temporal positions with a respective phase difference of an integral multiple of half a clock cycle synchronously with the leading or trailing edge of the clock signal. The controller can be applied in particular for controlling the synchronous parallel-serial converter for converting a parallel input signal comprising k bit positions into a serial output signal sequence synchronously with the clock signal (clk_hr_i), which converter is provided in a transmitting circuit in the interface circuit of a very fast DDR DRAM semiconductor memory component of the coming memory generation (e.g. DDR4).
摘要:
A memory system and method is disclosed. In one embodiment, the memory system includes a memory controller and at least one memory module on which a certain number of semiconductor memory chips and connecting lines are arranged in a respectively specified topology. The connecting lines include first connecting lines forming transfer channels for a protocol based transfer of data and command signal streams from the memory controller to at least one of the memory chips on the memory module and from there to the memory controller, respectively. Second connecting lines are routed separately from the memory controller directly to at least one of the memory chips on the memory module for transferring select information to the at least one memory chip separately from the data and command signal streams.
摘要:
A memory system and method is discussed. The memory system includes a memory controller and at least one memory module on which a certain number of semiconductor memory chips and connecting lines are arranged in a respectively specified topology. The connecting lines include first connecting lines forming transfer channels for a protocol based transfer of data and command signal streams from the memory controller to at least one of the memory chips on the memory module and from there to the memory controller, respectively. Second connecting lines are routed separately from the memory controller directly to at least one of the memory chips on the memory module for transferring select information to the at least one memory chip separately from the data and command signal streams.
摘要:
A synchronous parallel/serial converter is disclosed. In one embodiment, the a synchronous parallel/serial converter that receives a parallel n-bit input signal and comprising a first shift register that receives an odd-numbered part of the input signal with a first load signal in synchronism with a clock signal having a clock rate half the clock rate of a system clock, and provides a serial output as a first one-bit signal sequence; a second shift register that receives an even-numbered part of the input signal with a second load signal synchronism with the clock signal and provides a serial output as a second one-bit signal sequence; and a fusion unit that fuses the first serial one-bit signal sequence synchronously with the clock signal and the second serial one-bit signal sequence in synchronism the clock signal to form a serial one-bit output signal.
摘要:
A synchronous parallel/serial converter is disclosed. In one embodiment, the a synchronous parallel/serial converter that receives a parallel n-bit input signal and comprising a first shift register that receives an odd-numbered part of the input signal with a first load signal in synchronism with a clock signal having a clock rate half the clock rate of a system clock, and provides a serial output as a first one-bit signal sequence; a second shift register that receives an even-numbered part of the input signal with a second load signal synchronism with the clock signal and provides a serial output as a second one-bit signal sequence; and a fusion unit that fuses the first serial one-bit signal sequence synchronously with the clock signal and the second serial one-bit signal sequence in synchronism the clock signal to form a serial one-bit output signal.
摘要:
A semiconductor memory module includes a plurality of semiconductor memory chips and bus signal lines that supply an incoming clock signal and incoming command and address signals to the semiconductor memory chips. A clock signal regeneration circuit and a register circuit are arranged on the semiconductor memory module in a common chip packing connected to the bus signal lines. The clock signal regeneration circuit and the register circuit respectively condition the incoming clock signal and temporarily store the incoming command and address signals, respectively multiply the conditioned clock signal and the temporarily stored command and address signals by a factor of 1:X, and respectively supply to the semiconductor memory chips the conditioned clock signal and the temporarily stored command and address signals.
摘要:
A semiconductor memory system includes a semiconductor memory chip in which data, command, and address signals are transmitted serially between a memory controller and the semiconductor memory chip in signal frames in correspondence with a predetermined protocol. In a receive signal path within the semiconductor memory chip, a frame decoder for decoding the signal frames is arranged following a receiving interface device, and between the frame decoder and a memory core, an intermediate storage device is arranged which has a cell array including a multiplicity of memory cells, and an addressing and selector circuit to which address signals decoded by the frame decoder from command and/or write signal frames supplied by the memory controller are applied, for addressing the cell array and for selecting the write data to be written into the cell array and to be read out of the cell array.
摘要:
A synchronization and data recovery device (SuD) for clock-synchronized recovery of data bits in a data stream is provided, which is particularly suitable for improved backward identification of data in serial receiver interfaces of high-speed semiconductor memory modules and/or memory controller modules with a low data density. The SuD includes a sampling unit, a data adjustment unit, a digital monitoring unit, a phase lock detector unit, a phase generator, an FIR low-pass filter and a data recovery decision unit. After synchronization of the values that have been sampled by the sampling unit in the data adjustment unit, these values are filtered in the FIR low-pass filter unit, which indicates a greater tolerance with respect to fluctuations in the ideal sampling time, in that it uses sample values of the previous symbol and of the subsequent symbol in addition to the sample values of the symbol to be identified.
摘要:
A semiconductor memory system for the transfer of write and read data signals among interface circuits includes at least one memory device, a memory controller unit and, optionally, a register unit of a semiconductor memory system, wherein the data signals are each transferred in signal bursts of a specific burst length. The system is characterized in that a number of additional bits extending the burst length are transferred together with at least every nth signal burst.
摘要:
Method and apparatus for communication (e.g., transmitting and/or receiving) command, address and data signals from a memory device to a memory controller or vice versa. The data signals are transferred with a first rate and command signals and/or address signals are transferred with a second rate lower than a first rate. Additionally or alternatively a command sequence code identifying a command sequence from a predefined group of command sequences is transferred with the first or with the second rate.