Memory repair system and method
    2.
    发明授权

    公开(公告)号:US12300337B2

    公开(公告)日:2025-05-13

    申请号:US17944691

    申请日:2022-09-14

    Abstract: A system for repairing a random access memory may include serial test interface logic, fuse-sense logic, a repair data register chain, and multiplexing logic. The repair data register chain may include serially interconnected data registers configured to shift data through the repair data register chain. Each data register of the repair data register chain may have a data output configured to be coupled to a repair information input of the random access memory. The multiplexing logic may be configured to provide a soft-repair mode and a hard-repair mode. When the soft-repair mode is selected, the multiplexing logic may be configured to receive soft-repair data provided by the serial test interface logic into the data registers. When the hard-repair mode is selected, the multiplexing logic may be configured to receive the data provided by the fuse-sense logic into the data registers.

    Dual tap architecture for enabling secure access for DDR memory test controller

    公开(公告)号:US11037651B2

    公开(公告)日:2021-06-15

    申请号:US16675676

    申请日:2019-11-06

    Abstract: Disclosed are methods and apparatus for securely accessing and testing a double data rate (DDR) memory device. The apparatus includes a first memory test access port (TAP) configured to enable or disable access to at least one double date rate (DDR) memory device, a second memory TAP configured to enable or disable access to at least one non-DDR memory device, and a test controller configured to test the at least one DDR memory device via the first memory TAP or test the at least one non-DDR memory device via the second memory TAP. In an aspect, at least one non-DDR memory device contains proprietary information. Accordingly, access to the at least one non-DDR memory device via the second memory TAP is disabled when access to the at least one DDR memory device via the first memory TAP is enabled.

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