公开(公告)号：US20020197761A1

公开(公告)日：2002-12-26

申请号：US10154150

申请日：2002-05-22

Applicant: REFLECTIVITY, INC.

Inventor： Satyadev R. Patel ,  Andrew G. Huibers ,  Gregory P. Schaadt ,  Peter J. Heureux

IPC: H01L021/00 ,  H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00476 ,  B81C1/00547 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/112 ,  B82Y30/00

Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.

Abstract translation: 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构，包括：提供衬底; 在衬底上直接或间接提供牺牲层; 在所述牺牲层上提供一个或多个微机械结构层; 执行第一蚀刻以去除牺牲层的一部分，所述第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体，以允许蚀刻剂气体在物理或化学和物理上移除牺牲层的该部分; 执行第二蚀刻以去除牺牲层中的附加牺牲材料，第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。 该方法的另一实施例是用于在衬底上或衬底内蚀刻硅材料，包括：执行第一蚀刻以去除硅的一部分，第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体以允许蚀刻剂 物理或化学和物理的气体去除硅的部分; 执行第二蚀刻以去除附加的硅，第二蚀刻包括提供蚀刻剂气体，其化学地但不物理地蚀刻附加的硅。

公开(公告)号：US20040069747A1

公开(公告)日：2004-04-15

申请号：US10269149

申请日：2002-10-11

Applicant: REFLECTIVITY, INC., a California corporation

Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Niles K. MacDonald ,  Hongqin Shi

IPC: G01L021/30 ,  G01R031/00

CPC classification number: H01J37/32963 ,  B81C1/00476 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J37/32449 ,  H01J37/32935

Abstract: Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber

Abstract translation: 通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室

公开(公告)号：US20020195423A1

公开(公告)日：2002-12-26

申请号：US10104109

申请日：2002-03-22

Applicant: REFLECTIVITY, INC.

Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Hongqin Shi ,  Andrew G. Huibers ,  Peter Heureux

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

CPC classification number: B81C1/00 ,  B81B2201/045 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00595 ,  B81C99/0025 ,  B81C2201/0138 ,  B82Y30/00 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/32135

Abstract: The etching of a material in a vapor phase etchant is disclosed where a vapor phase etchant is provided to an etching chamber at a total gas pressure of 10 Torr or more, preferably 20 Torr or even 200 Torr or more. The vapor phase etchant can be gaseous acid etchant, a noble gas halide or an interhalogen. The sample/workpiece that is etched can be, for example, a semiconductor device or MEMS device, etc. The material that is etched/removed by the vapor phase etchant is preferably silicon and the vapor phase etchant is preferably provided along with one or more diluents. Another feature of the etching system includes the ability to accurately determine the end point of the etch step, such as by creating an impedance at the exit of the etching chamber (or downstream thereof) so that when the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. A first plasma or wet chemical etch (or both) can be performed prior to the vapor phase etch.

Abstract translation: 公开了在气相蚀刻剂中的材料的蚀刻，其中气蚀刻蚀刻剂以10托或更大，优选20托或甚至200托或更大的总气体压力提供给蚀刻室。 气相蚀刻剂可以是气态酸蚀刻剂，惰性气体卤化物或中间卤素。 被蚀刻的样品/工件可以是例如半导体器件或MEMS器件等。通过气相蚀刻剂蚀刻/去除的材料优选为硅，并且气相蚀刻剂优选与一个或多个 稀释剂。 蚀刻系统的另一特征包括能够精确地确定蚀刻步骤的终点，例如通过在蚀刻室的出口处（或其下游）处产生阻抗，使得当气相蚀刻剂从蚀刻室 ，监测蚀刻反应的气体产物，并且可以确定除去过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。 可以在气相蚀刻之前执行第一等离子体或湿化学蚀刻（或两者）。