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    Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
    3.
    发明申请
    Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants 有权
    通过用多个顺序蚀刻剂去除牺牲层来制造微机械装置的方法

    公开(公告)号：US20020197761A1

    公开(公告)日：2002-12-26

    申请号：US10154150

    申请日：2002-05-22

    Applicant: REFLECTIVITY, INC.

    Inventor： Satyadev R. Patel ,  Andrew G. Huibers ,  Gregory P. Schaadt ,  Peter J. Heureux

    IPC: H01L021/00 ,  H01L021/302 ,  H01L021/461

    CPC classification number: B81C1/00476 ,  B81C1/00547 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/112 ,  B82Y30/00

    Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.

    Abstract translation: 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构，包括：提供衬底; 在衬底上直接或间接提供牺牲层; 在所述牺牲层上提供一个或多个微机械结构层; 执行第一蚀刻以去除牺牲层的一部分，所述第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体，以允许蚀刻剂气体在物理或化学和物理上移除牺牲层的该部分; 执行第二蚀刻以去除牺牲层中的附加牺牲材料，第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。 该方法的另一实施例是用于在衬底上或衬底内蚀刻硅材料，包括：执行第一蚀刻以去除硅的一部分，第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体以允许蚀刻剂 物理或化学和物理的气体去除硅的部分; 执行第二蚀刻以去除附加的硅，第二蚀刻包括提供蚀刻剂气体，其化学地但不物理地蚀刻附加的硅。

    Apparatus and method for detecting an endpoint in a vapor phase etch
    5.
    发明申请
    Apparatus and method for detecting an endpoint in a vapor phase etch 有权
    用于检测气相蚀刻中的端点的装置和方法

    公开(公告)号：US20040069747A1

    公开(公告)日：2004-04-15

    申请号：US10269149

    申请日：2002-10-11

    Applicant: REFLECTIVITY, INC., a California corporation

    Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Niles K. MacDonald ,  Hongqin Shi

    IPC: G01L021/30 ,  G01R031/00

    CPC classification number: H01J37/32963 ,  B81C1/00476 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J37/32449 ,  H01J37/32935

    Abstract: Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber

    Abstract translation: 通过与制造微结构中的工艺气体接触从工件材料去除层或区域的工艺通过精确地确定去除步骤的终点的能力增强。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室

    Multiple hinge MEMS device
    6.
    发明申请
    Multiple hinge MEMS device 有权
    多重铰链MEMS器件

    公开(公告)号：US20040233505A1

    公开(公告)日：2004-11-25

    申请号：US10346506

    申请日：2003-01-15

    Applicant: REFLECTIVITY, INC., a California corporation

    Inventor： Andrew G. Huibers ,  Satyadev R. Patel

    IPC: G02B026/00

    CPC classification number: G02B26/0841

    Abstract: A MEMS device is disclosed comprising: a substrate; a movable micromechanical element movable relative to the substrate; a connector and a hinge for allowing movement of the micromechanical element, wherein the connector is made of a material different than the hinge. In another embodiment of the invention, the connector has a conductivity greater than the hinge. In a further embodiment of the invention, the hinge provides at least 90% of the restoring force to the MEMS device, and the connector provides 10% or less of the restoring force. In a further embodiment of the invention, the connector and the hinge have different spring constants. In a still further embodiment of the invention, the connector experiences a lower strain at maximum deflection of the micromechanical element than the hinge.

    Abstract translation: 公开了一种MEMS器件，包括：衬底; 可移动微机械元件，其相对于所述基板移动; 用于允许微机械元件移动的连接器和铰链，其中连接器由不同于铰链的材料制成。 在本发明的另一个实施例中，连接器的导电率大于铰链。 在本发明的另一实施例中，铰链提供至少90％的恢复力到MEMS装置，并且连接器提供10％或更小的恢复力。 在本发明的另一实施例中，连接器和铰链具有不同的弹簧常数。 在本发明的另一个实施例中，连接器在微机械元件的最大偏转处经受比铰链更低的应变。

    Deflectable micromirrors with stopping mechanisms
    7.
    发明申请
    Deflectable micromirrors with stopping mechanisms 有权
    具有停止机构的偏转微镜

    公开(公告)号：US20020196524A1

    公开(公告)日：2002-12-26

    申请号：US10155744

    申请日：2002-05-24

    Applicant: REFLECTIVITY, INC.

    Inventor： Andrew G. Huibers ,  Peter J. Heureux ,  Satyadev R. Patel

    IPC: G02B026/00

    CPC classification number: G02B26/0841

    Abstract: A spatial light modulator having a micromirror and one or more deflection limiting mechanisms, and a process for fabrication therefor. In one embodiment, the mirror support structure has a deflection stopping mechanism that limits the tilt angle of the reflective plate. Alternatively, a deflection stopping mechanism can be provided separate from the mirror support structure. The deflection stopping mechanism can be used in conjunction with one or more additional stopping mechanisms such as the abutment of a portion of the reflective plate against the substrate upon which it was constructed and/or abutment of the micromirror on a surface or structure of the circuit substrate.

    Abstract translation: 具有微反射镜和一个或多个偏转限制机构的空间光调制器及其制造方法。 在一个实施例中，反射镜支撑结构具有限制反射板的倾斜角度的偏转停止机构。 或者，偏转止动机构可以与镜支撑结构分开设置。 偏转止动机构可以与一个或多个附加止动机构结合使用，例如反射板的一部分抵靠其上构造的基板和/或微镜在电路的表面或结构上的邻接 基质。

    Method for vapor phase etching of silicon
    8.
    发明申请
    Method for vapor phase etching of silicon 有权
    硅的气相蚀刻方法

    公开(公告)号：US20020195423A1

    公开(公告)日：2002-12-26

    申请号：US10104109

    申请日：2002-03-22

    Applicant: REFLECTIVITY, INC.

    Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Hongqin Shi ,  Andrew G. Huibers ,  Peter Heureux

    IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

    CPC classification number: B81C1/00 ,  B81B2201/045 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00595 ,  B81C99/0025 ,  B81C2201/0138 ,  B82Y30/00 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/32135

    Abstract: The etching of a material in a vapor phase etchant is disclosed where a vapor phase etchant is provided to an etching chamber at a total gas pressure of 10 Torr or more, preferably 20 Torr or even 200 Torr or more. The vapor phase etchant can be gaseous acid etchant, a noble gas halide or an interhalogen. The sample/workpiece that is etched can be, for example, a semiconductor device or MEMS device, etc. The material that is etched/removed by the vapor phase etchant is preferably silicon and the vapor phase etchant is preferably provided along with one or more diluents. Another feature of the etching system includes the ability to accurately determine the end point of the etch step, such as by creating an impedance at the exit of the etching chamber (or downstream thereof) so that when the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. A first plasma or wet chemical etch (or both) can be performed prior to the vapor phase etch.

    Abstract translation: 公开了在气相蚀刻剂中的材料的蚀刻，其中气蚀刻蚀刻剂以10托或更大，优选20托或甚至200托或更大的总气体压力提供给蚀刻室。 气相蚀刻剂可以是气态酸蚀刻剂，惰性气体卤化物或中间卤素。 被蚀刻的样品/工件可以是例如半导体器件或MEMS器件等。通过气相蚀刻剂蚀刻/去除的材料优选为硅，并且气相蚀刻剂优选与一个或多个 稀释剂。 蚀刻系统的另一特征包括能够精确地确定蚀刻步骤的终点，例如通过在蚀刻室的出口处（或其下游）处产生阻抗，使得当气相蚀刻剂从蚀刻室 ，监测蚀刻反应的气体产物，并且可以确定除去过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。 可以在气相蚀刻之前执行第一等离子体或湿化学蚀刻（或两者）。

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