公开(公告)号：US20160155825A1

公开(公告)日：2016-06-02

申请号：US15017459

申请日：2016-02-05

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Toshiaki IWAMATSU ,  Takashi TERADA ,  Hirofumi SHINOHARA ,  Kozo ISHIKAWA ,  Ryuta TSUCHIYA ,  Kiyoshi HAYASHI

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/265 ,  H01L21/308 ,  H01L21/321

CPC classification number: H01L29/66795 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/28035 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/321 ,  H01L29/785

Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.