公开(公告)号：US20060257757A1

公开(公告)日：2006-11-16

申请号：US11486523

申请日：2006-07-13

申请人： Randall Chance ,  J. Rolfson ,  Azeddine Zerrade

发明人： Randall Chance ,  J. Rolfson ,  Azeddine Zerrade

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/32 ,  C03C15/00 ,  G03F1/26 ,  G03F1/72

摘要： The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch. The configuration suitable for 248 nanometer wavelength radiation can be constructed so that a phase of 248 nanometer wavelength radiation is shifted by about 180° upon passing through combined thicknesses of the patterned layer and the quartz-containing material, relative to 248 nanometer wavelength radiation which passes only through the quartz-containing material.

公开(公告)号：US20050077266A1

公开(公告)日：2005-04-14

申请号：US10686342

申请日：2003-10-14

申请人： Randal Chance ,  J. Rolfson ,  Azeddine Zerrade

发明人： Randal Chance ,  J. Rolfson ,  Azeddine Zerrade

IPC分类号： C03C15/00 ,  G03F1/00 ,  C23F1/00 ,  B44C1/22 ,  C03C25/68

CPC分类号： G03F1/32 ,  C03C15/00 ,  G03F1/26 ,  G03F1/72

摘要： The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch. The configuration suitable for 248 nanometer wavelength radiation can be constructed so that a phase of 248 nanometer wavelength radiation is shifted by about 180° upon passing through combined thicknesses of the patterned layer and the quartz-containing material, relative to 248 nanometer wavelength radiation which passes only through the quartz-containing material.

摘要翻译： 本发明包括从适合于利用后代（较短波长）步进辐射的配置转换掩模版到适于利用早期生成（更长波长）步进辐射的配置的方法。 本发明可用于将掩模版从适于193纳米波长辐射的配置转换成适合于248纳米波长辐射的配置。 在这种方面，可以用基本上由钼和硅组成的图案层来保护衬底的含石英材料，同时对含石英的材料进行干蚀刻。 可以构造适合于248纳米波长辐射的配置，使得248纳米波长辐射的相位相对于通过图案化层和含石英的材料的组合厚度相对于相对于通过的248纳米波长辐射而偏移大约180度 仅通过含石英材料。

公开(公告)号：US20050008943A1

公开(公告)日：2005-01-13

申请号：US10614529

申请日：2003-07-07

申请人： J. Rolfson

发明人： J. Rolfson

IPC分类号： G03C3/02 ,  G03C5/00 ,  G03F1/14 ,  G03F9/00

CPC分类号： G03F1/40 ,  G03F1/86

摘要： A method to provide a ground point for second, or subsequent, e-beam mask-writing steps by selectively removing the photoresist edge bead of a photomask substrate to expose the underlying chrome layer. The selective removal leaves at least one tab of photoresist edge bead over the chrome layer. After the first e-beam mask writing step and subsequent etch, the tab can be removed to expose a portion of the chromium layer that can act as a new ground point for a second e-beam etch. Also, a nozzle for use in selectively removing the edge bead to leave a tab of photoresist edge bead.

摘要翻译： 通过选择性地去除光掩模衬底的光致抗蚀剂边缘以暴露下面的铬层来为第二或随后的电子束掩模写入步骤提供接地点的方法。 选择性去除在铬层上留下光致抗蚀剂边缘珠的至少一个突片。 在第一电子束掩模写入步骤和随后的蚀刻之后，可以去除突片以暴露可以充当第二电子束蚀刻的新接地点的铬层的一部分。 而且，用于选择性地去除边缘珠以留下光致抗蚀剂边缘珠的突片的喷嘴。

公开(公告)号：US20060024942A1

公开(公告)日：2006-02-02

申请号：US10903348

申请日：2004-07-29

申请人： John Aiton ,  Joseph Richards ,  J. Rolfson ,  John Drynan

发明人： John Aiton ,  Joseph Richards ,  J. Rolfson ,  John Drynan

IPC分类号： H01L21/44

CPC分类号： H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/49431 ,  H01L2224/78301 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00

摘要： The invention includes a semiconductor construction having a wire bonding region associated with a metal-containing layer, and having radiation-imageable material over the metal-containing layer. The radiation-imageable material can be configured as a multi-level pattern having a first topographical region with a first elevational height and a second topographical region with a second elevational height above the first elevational height. The second topographical region can be laterally displaced from the bonding region by at least a lateral width of the first topographical region, with said lateral width being at least about 10 microns. Additionally, or alternatively, the elevational height of the second topographical region can be at least about 2 microns above the elevational height of the first topographical region. The invention also includes a method of forming wire bonds for semiconductor constructions in which a multi-level pattern is photolithographically formed in a radiation-imageable material (such as, for example, polyimide).

摘要翻译： 本发明包括一种半导体结构，其具有与含金属层相关联的引线接合区域，并且在含金属层之上具有可辐射成像材料。 可辐射成像材料可以被配置为具有具有第一高度的第一形貌区域和具有高于第一高度高度的第二高度高度的第二地形区域的多层图案。 第二形貌区域可以从接合区域横向移位至少第一形貌区域的横向宽度，所述横向宽度为至少约10微米。 另外或替代地，第二形貌区域的高度高度可以高于第一地形区域的高度高度至少约2微米。 本发明还包括一种形成用于半导体结构的引线键合的方法，其中在可辐射成像材料（例如，聚酰亚胺）中光刻形成多层图案。

公开(公告)号：US20060121361A1

公开(公告)日：2006-06-08

申请号：US11003274

申请日：2004-12-03

申请人： J. Rolfson

发明人： J. Rolfson

IPC分类号： B32B17/06 ,  G03C5/00 ,  G21K5/00 ,  B32B9/00 ,  G03F1/00

CPC分类号： G03F1/32 ,  G03F1/50 ,  G03F7/70425

摘要： The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.

公开(公告)号：US20050205007A1

公开(公告)日：2005-09-22

申请号：US11135843

申请日：2005-05-23

申请人： J. Rolfson

发明人： J. Rolfson

IPC分类号： B05C11/00 ,  B05C13/00 ,  G03F7/16 ,  G03F7/38 ,  G03F7/40 ,  H01L21/00

CPC分类号： H01L21/67103 ,  F28D2021/0077 ,  G03F7/168 ,  G03F7/38 ,  G03F7/40 ,  H01L21/67109

摘要： An apparatus for baking a film onto a substrate. A film, such as a layer of photoresist, is disposed on a first surface of a substrate while a second surface is exposed to a liquid bath. The liquid bath is maintained at a pre-selected temperature. Exposure of the substrate to the liquid bath allows the film on the opposite surface to bake. The liquid bath is re-circulated to maintain a constant and uniform temperature gradient across the substrate.

摘要翻译： 一种用于将膜烘烤到基底上的装置。 将诸如光致抗蚀剂层的膜设置在基板的第一表面上，同时将第二表面暴露于液槽。 液浴保持在预先选定的温度。 将基板暴露于液槽允许相对表面上的膜被烘烤。 液体浴再循环，以保持基板上恒定均匀的温度梯度。

公开(公告)号：US20060130969A1

公开(公告)日：2006-06-22

申请号：US11329504

申请日：2006-01-11

申请人： J. Rolfson

发明人： J. Rolfson

IPC分类号： C23F1/00

CPC分类号： G03F1/40 ,  G03F1/86

摘要： A method to provide a ground point for second, or subsequent, e-beam mask-writing steps by selectively removing the photoresist edge bead of a photomask substrate to expose the underlying chrome layer. The selective removal leaves at least one tab of photoresist edge bead over the chrome layer. After the first e-beam mask writing step and subsequent etch, the tab can be removed to expose a portion of the chromium layer that can act as a new ground point for a second e-beam etch. Also, a nozzle for use in selectively removing the edge bead to leave a tab of photoresist edge bead.

摘要翻译： 通过选择性地去除光掩模衬底的光致抗蚀剂边缘以暴露下面的铬层来为第二或随后的电子束掩模写入步骤提供接地点的方法。 选择性去除在铬层上留下光致抗蚀剂边缘珠的至少一个突片。 在第一电子束掩模写入步骤和随后的蚀刻之后，可以去除突片以暴露可以充当第二电子束蚀刻的新接地点的铬层的一部分。 而且，用于选择性地去除边缘珠以留下光致抗蚀剂边缘珠的突片的喷嘴。

公开(公告)号：US20060008710A1

公开(公告)日：2006-01-12

申请号：US11154265

申请日：2005-06-15

申请人： J. Rolfson

发明人： J. Rolfson

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/32 ,  G03F1/29

摘要： The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.

公开(公告)号：US20070202418A1

公开(公告)日：2007-08-30

申请号：US11741460

申请日：2007-04-27

申请人： J. Rolfson

发明人： J. Rolfson

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/32 ,  G03F1/29

摘要： The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.

摘要翻译： 本发明提供了衰减相移掩模（“APSM”），其在每个实施例中包括尺寸和形状以确定期望的半导体器件特征的完全透射区域，在完全透射区域的边缘处对应于隔离的器件特征的略微衰减的区域 在完全透射区域的边缘处的高度衰减的区域对应于紧密间隔或嵌套的器件特征，以及完全不透明的区域，其中期望阻止通过APSM的所有辐射的透射。 本发明还提供了制造根据本发明的APSM的方法。

公开(公告)号：US20070072343A1

公开(公告)日：2007-03-29

申请号：US11584163

申请日：2006-10-20

申请人： John Aiton ,  Joseph Richards ,  J. Rolfson ,  John Drynan

发明人： John Aiton ,  Joseph Richards ,  J. Rolfson ,  John Drynan

IPC分类号： H01L21/00

CPC分类号： H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/49431 ,  H01L2224/78301 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00

摘要： The invention includes a semiconductor construction having a wire bonding region associated with a metal-containing layer, and having radiation-imageable material over the metal-containing layer. The radiation-imageable material can be configured as a multi-level pattern having a first topographical region with a first elevational height and a second topographical region with a second elevational height above the first elevational height. The second topographical region can be laterally displaced from the bonding region by at least a lateral width of the first topographical region, with said lateral width being at least about 10 microns. Additionally, or alternatively, the elevational height of the second topographical region can be at least about 2 microns above the elevational height of the first topographical region. The invention also includes a method of forming wire bonds for semiconductor constructions in which a multi-level pattern is photolithographically formed in a radiation-imageable material (such as, for example, polyimide).

摘要翻译： 本发明包括一种半导体结构，其具有与含金属层相关联的引线接合区域，并且在含金属层之上具有可辐射成像材料。 可辐射成像材料可以被配置为具有具有第一高度的第一形貌区域和具有高于第一高度高度的第二高度高度的第二地形区域的多层图案。 第二形貌区域可以从接合区域横向移位至少第一形貌区域的横向宽度，所述横向宽度为至少约10微米。 另外或替代地，第二形貌区域的高度高度可以高于第一地形区域的高度高度至少约2微米。 本发明还包括一种形成用于半导体结构的引线键合的方法，其中在可辐射成像材料（例如，聚酰亚胺）中光刻形成多层图案。