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公开(公告)号：US20230317860A1
公开(公告)日：2023-10-05
申请号：US18207274
申请日：2023-06-08
发明人： Seung Hun LEE , Dong Woo KIM , Dong Chan SUH , Sun Jung KIM
IPC分类号： H01L29/786 , H01L29/06 , H01L29/423 , H01L21/02 , H01L21/8238 , H01L29/66 , H01L29/775 , B82Y10/00 , H01L29/08 , H01L27/092
CPC分类号： H01L29/78696 , H01L29/0673 , H01L29/42392 , H01L21/02603 , H01L21/02532 , H01L21/823807 , H01L29/66545 , H01L29/775 , B82Y10/00 , H01L29/42364 , H01L29/66439 , H01L29/0653 , H01L29/0847 , H01L27/092 , H01L29/66742 , H01L29/78684 , H01L29/78651 , Y10S977/762 , H01L29/068 , Y10S977/938 , Y10S977/765
摘要： A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
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公开(公告)号：US20240196598A1
公开(公告)日：2024-06-13
申请号：US18527470
申请日：2023-12-04
发明人： Jun Kwan KIM , Dong Woo KIM , Mun Jun KIM , On Yu BAE , Yong Jin SHIN , Kyoung Min WOO
IPC分类号： H10B12/00
CPC分类号： H10B12/34 , H10B12/033 , H10B12/053 , H10B12/315
摘要： A semiconductor device is provided. The semiconductor device includes a substrate containing deuterium at a first concentration, an active pattern disposed on the substrate and extending in a first horizontal direction, a gate electrode disposed on the active pattern and extending in a second horizontal direction different from the first horizontal direction, a gate insulating layer disposed between the active pattern and the gate electrode, the gate insulating layer containing deuterium at a second concentration, a first interlayer insulating layer disposed on the gate electrode, a second interlayer insulating layer disposed on the first interlayer insulating layer, and a wiring pattern disposed inside the second interlayer insulating layer, the wiring pattern containing deuterium at a third concentration lower than the first concentration, wherein each of the first to third concentrations is a concentration of deuterium atoms contained in the same unit volume.
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公开(公告)号：US20240178138A1
公开(公告)日：2024-05-30
申请号：US18378182
申请日：2023-10-10
发明人： Yong Jin SHIN , Dong Woo KIM , Mun Jun KIM , Jun Kwan KIM , On Yu BAE , Kyoung Min WOO
IPC分类号： H01L23/528 , H01L21/768 , H01L23/532
CPC分类号： H01L23/528 , H01L21/76832 , H01L21/76841 , H01L23/53223 , H01L28/90
摘要： A semiconductor device includes a substrate having a cell region and a peripheral region surrounding the cell region, a lower electrode extending in a vertical direction on the cell region of the substrate, an upper electrode surrounding a sidewall and a top surface of the lower electrode, a capacitor dielectric layer disposed between the lower electrode and the upper electrode, a first barrier layer disposed on the upper electrode, the first barrier layer in contact with each of a sidewall and a top surface of the upper electrode, a first interlayer insulating layer covering the first barrier layer, the first interlayer insulating layer including a material different from the first barrier layer, and a first contact penetrating through the first barrier layer and the first interlayer insulating layer in the vertical direction, the first contact connected to the upper electrode.
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公开(公告)号：US20230055450A1
公开(公告)日：2023-02-23
申请号：US17841858
申请日：2022-06-16
发明人： Seong Min CHOO , Hyuk Woo KWON , Dong Woo KIM , Byoung Deog CHOI
IPC分类号： H01L27/108 , H01L49/02
摘要： A semiconductor device including a first pad on a substrate extending in a first direction and a second direction, a lower electrode connected to and disposed on the first pad, first to third supporter layers disposed on a side wall of the lower electrode and sequentially spaced apart from each other in a third direction perpendicular to the first direction and the second direction, a dielectric film disposed on the lower electrode and the first to third supporter layers, and an upper electrode disposed on the dielectric film. At least one of a side wall of the lower electrode between the first supporter layer and the second supporter layer, and a side wall of the lower electrode between the second supporter layer and the third supporter layer includes a first portion including protrusions extending in the first direction and includes a second portion including no protrusions.
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5.发明申请BLOOD PRESSURE MEASUREMENT APPARATUS, GATEWAY, SYSTEM INCLUDING THE SAME, AND METHOD THEREOF 审中-公开血压测量装置，网关，包括其的系统及其方法公开(公告)号：US20140024957A1
公开(公告)日：2014-01-23
申请号：US13903465
申请日：2013-05-28
发明人： Dong Woo KIM , Ji Eun Kim , Jeong Je Park , Kwang Hyeon Lee
CPC分类号： A61B5/022 , A61B5/0004 , A61B5/72 , A61B5/7271 , A61B5/742 , G16H50/20 , G16H50/70
摘要： A blood pressure measurement apparatus for determining a level of rareness of raw data and transmitting the raw data to a gateway or a server according to the determined level of the raw data includes a blood pressure estimator configured to acquire raw data for estimating blood pressure, and to estimate blood pressure from the raw data according to a blood pressure estimation algorithm; and a controller configured to determine a level of rareness of the raw data, and to determine whether to transmit the raw data according to the determined level of rareness of the raw data.
摘要翻译： 一种血压测量装置，用于根据原始数据的确定水平确定原始数据的稀有度水平和将原始数据发送到网关或服务器，包括：血压估计器，被配置为获取用于估计血压的原始数据;以及 根据血压估计算法从原始数据估计血压; 以及控制器，被配置为确定原始数据的稀有度水平，并且根据所确定的原始数据的稀有度来确定是否发送原始数据。
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公开(公告)号：US20220231168A1
公开(公告)日：2022-07-21
申请号：US17657761
申请日：2022-04-04
发明人： Hyo Jin KIM , Dong Woo KIM , Sang Moon LEE , Seung Hun LEE
IPC分类号： H01L29/78 , H01L21/768 , H01L21/8238 , H01L29/786 , H01L27/092
摘要： A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.
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公开(公告)号：US20210234050A1
公开(公告)日：2021-07-29
申请号：US17231120
申请日：2021-04-15
发明人： Seung Hun LEE , Dong Woo KIM , Dong Chan SUH , Sun Jung KIM
IPC分类号： H01L29/786 , H01L29/06 , H01L29/423 , H01L21/02 , H01L21/8238 , H01L29/66 , H01L29/775 , B82Y10/00 , H01L29/08 , H01L27/092
摘要： A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
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公开(公告)号：US20190288121A1
公开(公告)日：2019-09-19
申请号：US16435263
申请日：2019-06-07
发明人： Seung Hun LEE , Dong Woo KIM , Dong Chan SUH , Sun Jung KIM
IPC分类号： H01L29/786 , H01L21/02 , H01L29/423 , H01L29/66 , H01L29/06 , H01L29/08 , H01L29/775 , H01L21/8238 , B82Y10/00 , H01L27/092
摘要： A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
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公开(公告)号：US20180063512A1
公开(公告)日：2018-03-01
申请号：US15694189
申请日：2017-09-01
发明人： Seung Seok HONG , Doo Woong LEE , Gwang Woo PARK , Dong Woo KIM , Sung Jin KIM , Ho Chul SHIN , Sang Jun LEE , Seung Bum LEE , Dong Hyun YEOM
CPC分类号： H04N13/279 , G06T19/00 , H04N5/23238 , H04N13/161 , H04N13/194 , H04N13/261 , H04N13/275 , H04N13/344 , H04N13/363 , H04N13/383 , H04N19/597 , H04N21/21805 , H04N21/234345 , H04N21/2365 , H04N21/2385 , H04N21/6587 , H04N21/816
摘要： An electronic device is provided. The electronic device includes a display configured to output an image, a transceiver configured to establish a plurality of channels with an external electronic device, and a processor configured to classify a virtual three dimensional (3D) projection space around the electronic device into a plurality of regions, link each of the plurality of regions with one of the plurality of channels, receive image data over the channel linked to each of the plurality of regions via the transceiver from the external electronic device, and output a streaming image on the display based on the image data.
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公开(公告)号：US20170345945A1
公开(公告)日：2017-11-30
申请号：US15373065
申请日：2016-12-08
发明人： Seung Hun LEE , Dong Woo KIM , Dong Chan SUH , Sun Jung KIM
IPC分类号： H01L29/786 , H01L29/423 , H01L29/06 , H01L27/092 , H01L21/8238 , H01L29/66 , H01L21/02
CPC分类号： H01L29/78696 , B82Y10/00 , H01L21/02532 , H01L21/02603 , H01L21/823807 , H01L27/092 , H01L29/0653 , H01L29/0673 , H01L29/0847 , H01L29/42364 , H01L29/42392 , H01L29/66439 , H01L29/66545 , H01L29/775
摘要： A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
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