公开(公告)号：US20220354062A1

公开(公告)日：2022-11-10

申请号：US17574149

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkuk Lee ,  Kunyoo Ko ,  Daesup Kim ,  Jaechul Kim ,  Sunhwan Hwang

IPC: A01G7/04 ,  F21K9/64 ,  H01L33/50 ,  H01L33/06 ,  H01L33/32

Abstract: A light emitting device for plant growth includes: a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 380 nm to 445 nm; and at least one wavelength conversion material configured to be excited by the first light, and convert the first light into a light having a peak wavelength of 500 nm to 610 nm, wherein a photosynthetic photon efficacy (PPE) of an output light emitted from the light emitting device is 3.10 μmol/J or more.

公开(公告)号：US20170040637A1

公开(公告)日：2017-02-09

申请号：US15226179

申请日：2016-08-02

Applicant: Samsung Electronics Co., Ltd. ,  MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Gerbrand CEDER ,  Jaechul Kim ,  Lincoln Miara ,  William Richards ,  Tomoyuki Tsujimura ,  Yan Wang ,  Naoki Suzuki

IPC: H01M10/0562 ,  H01M10/0525

CPC classification number: H01M10/0562 ,  C01B17/22 ,  C01B25/14 ,  H01M10/0525 ,  H01M2220/20 ,  H01M2300/0065 ,  Y02E60/122 ,  Y02T10/7011

Abstract: A solid electrolyte material represented by Formula 1: L1+2x(M1)1-x(M2)(M3)4  Formula 1 wherein 0.25

公开(公告)号：US10446872B2

公开(公告)日：2019-10-15

申请号：US15226179

申请日：2016-08-02

Applicant: Samsung Electronics Co., Ltd. ,  MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Gerbrand Ceder ,  Jaechul Kim ,  Lincoln Miara ,  William Richards ,  Tomoyuki Tsujimura ,  Yan Wang ,  Naoki Suzuki

IPC: H01M10/0562 ,  H01M10/0525 ,  C01B25/14 ,  C01B17/22

Abstract: A solid electrolyte material represented by Formula 1: L1+2x(M1)1−x(M2)(M3)4  Formula 1 wherein 0.25

公开(公告)号：US11700795B2

公开(公告)日：2023-07-18

申请号：US17574149

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkuk Lee ,  Kunyoo Ko ,  Daesup Kim ,  Jaechul Kim ,  Sunhwan Hwang

IPC: A01G7/04 ,  F21K9/64 ,  H01L33/50 ,  H01L33/06 ,  H01L33/32 ,  F21Y115/10

CPC classification number: A01G7/045 ,  F21K9/64 ,  H01L33/06 ,  H01L33/32 ,  H01L33/504 ,  H01L33/507 ,  F21Y2115/10

Abstract: A light emitting device for plant growth includes: a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 380 nm to 445 nm; and at least one wavelength conversion material configured to be excited by the first light, and convert the first light into a light having a peak wavelength of 500 nm to 610 nm, wherein a photosynthetic photon efficacy (PPE) of an output light emitted from the light emitting device is 3.10 μmol/J or more.

公开(公告)号：US12266659B2

公开(公告)日：2025-04-01

申请号：US17843263

申请日：2022-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keunhwi Cho ,  Jinkyu Kim ,  Myunggil Kang ,  Dongwon Kim ,  Jaechul Kim ,  Sanghoon Lee

IPC: H01L27/118 ,  H03K19/20

Abstract: A semiconductor device includes a substrate including a first device region and a second device region, active regions spaced apart from each other on the substrate, having a constant width, extending in a first direction parallel to an upper surface of the substrate and including a first active region and a second active region provided on the first device region and a third active region and a fourth active region provided on the second device region, a plurality of channel layers provided on the active regions and configured to be spaced apart from each other in a direction perpendicular to the upper surface of the substrate, gate structures provided on the substrate and extending to cross the active regions and the plurality of channel layers, and source/drain regions provided on the active regions on at least one side of the gate structures.

公开(公告)号：US11469228B2

公开(公告)日：2022-10-11

申请号：US17146938

申请日：2021-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanwook Lee ,  Seungkwon Kim ,  Jaechul Kim ,  Younggun Ko ,  Yuri Masuoka

IPC: H01L27/092 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  H01L21/285 ,  H01L21/8238 ,  H01L29/66

Abstract: Disclosed is a semiconductor device comprising a substrate including PMOSFET and NMOSFET regions, first active fins at the PMOSFET region, second active fins at the NMOSFET region, a gate electrode extending in a first direction and running across the first and second active fins, a first source/drain pattern on the first active fins and connecting the first active fins to each other, a second source/drain pattern on the second active fins and connecting the second active fins to each other, a first active contact electrically connected to the first source/drain pattern, and a second active contact electrically connected to the second source/drain pattern. A maximum width of the first active contact in the first direction is less than a maximum width of the second active in the first direction.