公开(公告)号：US20140370634A1

公开(公告)日：2014-12-18

申请号：US14250070

申请日：2014-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keon Hun LEE ,  Min Ho KIM ,  Jong Uk SEO ,  Suk Ho YOON ,  Kee Won LEE ,  Sang Don LEE ,  Ho Chul LEE

IPC: H01L21/02 ,  H01L31/18

CPC classification number: H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02576 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/22

Abstract: A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

Abstract translation: 制造氮化物半导体薄膜的方法包括制备掺杂有n型杂质的第一氮化物单晶层。 通过向其施加蚀刻气体，在第一氮化物单晶层的表面上形成多个蚀刻坑。 在其上形成有蚀刻坑的第一氮化物单晶层上生长第二氮化物单晶层。

公开(公告)号：US20140231863A1

公开(公告)日：2014-08-21

申请号：US14184171

申请日：2014-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kee Won LEE ,  Jong Uk SEO ,  Suk Ho YOON ,  Keon Hun LEE ,  Sang Don LEE

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32

Abstract: A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

Abstract translation: 提供一种制造氮化物半导体发光器件的方法。 该方法包括在衬底上生长第一III族氮化物半导体层，第一III族氮化物半导体层具有形成为具有III族极性的III族富集表面的顶表面和底表面 形成为呈现N极性的富N的表面。 该方法还包括选择性地蚀刻第一III族氮化物半导体层的顶表面中的N极区域，在第一III族氮化物半导体层上形成第二III族氮化物半导体层以填充蚀刻的N极区域并形成 包括第一和第二导电型氮化物半导体层的发光结构和在第二III族氮化物半导体层上的有源层。