公开(公告)号：US20160043279A1

公开(公告)日：2016-02-11

申请号：US14661950

申请日：2015-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won JEAN ,  Min Hwan KIM ,  Eun Deok SIM ,  Jong Hyun LEE ,  Heon Ho LEE ,  Ho Chul LEE ,  Jae Sung HYUN

IPC: H01L33/32 ,  H01L33/02 ,  H01L33/46 ,  H01L33/14 ,  H01L33/50 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/325 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  H01L33/502 ,  Y10S977/95

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract translation: 半导体发光器件包括n型半导体层，设置在n型半导体层上的边界层，其带隙能量在单个方向上减小，并且由经验公式AlxInyGa1-x-yN（0＆n1E; x＆ ; 0.1,0.01＆amp; nlE; y＆nlE; 0.1），设置在边界层上并具有一个或多个InGaN层和一个或多个GaN层交替堆叠的结构的有源层和p型半导体层。

公开(公告)号：US20140370634A1

公开(公告)日：2014-12-18

申请号：US14250070

申请日：2014-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keon Hun LEE ,  Min Ho KIM ,  Jong Uk SEO ,  Suk Ho YOON ,  Kee Won LEE ,  Sang Don LEE ,  Ho Chul LEE

IPC: H01L21/02 ,  H01L31/18

CPC classification number: H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02576 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/22

Abstract: A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

Abstract translation: 制造氮化物半导体薄膜的方法包括制备掺杂有n型杂质的第一氮化物单晶层。 通过向其施加蚀刻气体，在第一氮化物单晶层的表面上形成多个蚀刻坑。 在其上形成有蚀刻坑的第一氮化物单晶层上生长第二氮化物单晶层。

公开(公告)号：US20160111595A1

公开(公告)日：2016-04-21

申请号：US14731391

申请日：2015-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Min Hwan KIM ,  Eun Deok SIM ,  Ji Heon OH ,  Heon Ho LEE ,  Ho Chul LEE ,  Jae Sung HYUN

IPC: H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/32

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract translation: 半导体发光器件可以包括：第一导电型半导体层; 设置在所述第一导电型半导体层上并且包括多个量子势垒层和交替层叠的多个量子阱层的有源层; 以及设置在有源层上的第二导电型半导体层。 在多个量子势垒层中最靠近第二导电类型半导体层的量子势垒层可以包括第一未掺杂区域和设置在第一未掺杂区域上的第一掺杂区域，并且具有大于或等于 第一个未掺杂的地区。 第一未掺杂区域和第一掺杂区域中的每一个可以包括具有不同能带隙的多个第一单元层和至少一个空穴积聚区域。

公开(公告)号：US20130099248A1

公开(公告)日：2013-04-25

申请号：US13655250

申请日：2012-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bum Joon KIM ,  Sung Tae KIM ,  Young Sun KIM ,  Suk Ho YOON ,  Ki Sung KIM ,  Ho Chul LEE

IPC: H01L33/32

CPC classification number: H01L33/14 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer.

Abstract translation: 提供了包括n型氮化物半导体层，设置在n型氮化物半导体层上的有源层和设置在有源层上的p型氮化物半导体层的氮化物半导体发光器件。 一个或多个电流扩散层设置在n型氮化物半导体层的表面上。 电流扩散层包括具有比形成n型氮化物半导体层的材料更大的带隙能量的材料，以便在与形成n型氮化物半导体层的材料的界面处形成二维电子气层 氮化物半导体层。