公开(公告)号：US11217327B2

公开(公告)日：2022-01-04

申请号：US17039798

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Min Kang ,  Dongku Kang ,  Kwang Won Kim ,  HyunJin Kim

IPC: G06F13/20 ,  G06F13/38 ,  G06F3/06 ,  G11C29/00 ,  G11C16/10 ,  G11C7/10 ,  G11C16/26 ,  G11C5/02 ,  G06F11/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/32 ,  G11C16/34

Abstract: A nonvolatile memory device includes a memory cell array including first to fourth planes, a page buffer circuit that includes first to fourth page buffer units connected with the first to fourth planes, respectively, an input/output circuit that includes a first input/output unit connected with the first to fourth page buffer units and a second input/output unit connected with the second and fourth page buffer units, and control logic that controls the input/output circuit to output first data from one of the first to fourth page buffer units through the first input/output unit in a first read mode and output second data from one of the first and third page buffer units through the first input/output unit and third data from one of the second and fourth page buffer units through the second input/output unit in a second read mode.

公开(公告)号：US09437286B2

公开(公告)日：2016-09-06

申请号：US14616786

申请日：2015-02-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Min Kang ,  Dae-Han Kim

IPC: G11C11/56 ,  G11C16/10 ,  G11C16/34 ,  G11C16/04 ,  G11C7/02 ,  G11C16/12 ,  G11C29/12 ,  G11C29/50

CPC classification number: G11C16/10 ,  G11C7/02 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/12 ,  G11C16/3459 ,  G11C2029/1202 ,  G11C2029/5002 ,  G11C2211/5621

Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.

Abstract translation: 一种对存储器系统进行编程的方法包括重复执行用于所选存储器单元（其中N是等于或大于2的自然数）的N个程序循环。 N个程序循环中的每一个包括程序操作和程序验证操作。 N个程序循环中的至少一个包括通过将程序电压施加到所选择的存储器单元和至少一个另外选择的至少一个字线来对选择的存储器单元和至少一个另外选择的存储单元执行程序操作 存储单元被连接，并且通过对选择的存储器单元所连接的所选择的字线应用程序验证电压来对所选存储单元执行程序验证操作。

公开(公告)号：US11651829B2

公开(公告)日：2023-05-16

申请号：US16941956

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Min Kang ,  Dongku Kang ,  Su Chang Jeon ,  Won-Taeck Jung

IPC: G11C16/04 ,  G11C16/34 ,  G11C16/10 ,  G11C16/30 ,  G11C16/28 ,  G11C16/08

CPC classification number: G11C16/3481 ,  G11C16/08 ,  G11C16/10 ,  G11C16/28 ,  G11C16/30

Abstract: A nonvolatile memory device includes a peripheral circuit region and a memory cell region vertically connected with the peripheral circuit region, the peripheral circuit region including at least one first metal pad, and the memory cell region including at least one second metal pad directly connected with the at least one first metal pad. A method of programming the nonvolatile memory device includes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.

公开(公告)号：US12033707B2

公开(公告)日：2024-07-09

申请号：US18301377

申请日：2023-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Min Kang ,  Dongku Kang ,  Su Chang Jeon ,  Won-Taeck Jung

IPC: G11C16/06 ,  G11C16/08 ,  G11C16/10 ,  G11C16/28 ,  G11C16/30 ,  G11C16/34

CPC classification number: G11C16/3481 ,  G11C16/08 ,  G11C16/10 ,  G11C16/28 ,  G11C16/30

Abstract: A nonvolatile memory device includes a peripheral circuit region and a memory cell region vertically connected with the peripheral circuit region, the peripheral circuit region including at least one first metal pad, and the memory cell region including at least one second metal pad directly connected with the at least one first metal pad. A method of programming the nonvolatile memory device incudes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.

公开(公告)号：US11625302B2

公开(公告)日：2023-04-11

申请号：US16692161

申请日：2019-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Min Kang ,  Dongku Kang ,  Su Chang Jeon ,  Won-Taeck Jung

IPC: G11C11/34 ,  G06F11/14 ,  G06F11/10 ,  G06F11/30 ,  G06F12/0882 ,  G11C11/56 ,  G11C11/409 ,  G11C11/408 ,  G11C11/4074 ,  G06F12/0873

Abstract: A method of programming a nonvolatile memory device includes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.

公开(公告)号：US11074990B2

公开(公告)日：2021-07-27

申请号：US16701205

申请日：2019-12-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Min Kang ,  Dongku Kang ,  Kwang Won Kim ,  HyunJin Kim

IPC: G06F13/20 ,  G06F13/38 ,  G06F3/06 ,  G11C29/00 ,  G11C16/10 ,  G11C7/10 ,  G11C16/26 ,  G11C5/02 ,  G06F11/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/32 ,  G11C16/34

Abstract: A nonvolatile memory device includes a memory cell array including first to fourth planes, a page buffer circuit that includes first to fourth page buffer units connected with the first to fourth planes, respectively, an input/output circuit that includes a first input/output unit connected with the first to fourth page buffer units and a second input/output unit connected with the second and fourth page buffer units, and control logic that controls the input/output circuit to output first data from one of the first to fourth page buffer units through the first input/output unit in a first read mode and output second data from one of the first and third page buffer units through the first input/output unit and third data from one of the second and fourth page buffer units through the second input/output unit in a second read mode.

公开(公告)号：US09646703B2

公开(公告)日：2017-05-09

申请号：US15236503

申请日：2016-08-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Min Kang ,  Dae-Han Kim

IPC: G11C16/10 ,  G11C16/34 ,  G11C16/04 ,  G11C11/56

CPC classification number: G11C16/10 ,  G11C7/02 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/12 ,  G11C16/3459 ,  G11C2029/1202 ,  G11C2029/5002 ,  G11C2211/5621

Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.