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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230087731A1

    公开(公告)日：2023-03-23

    申请号：US17994565

    申请日：2022-11-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junggun YOU ,  Joohee JUNG ,  Jaehyeoung MA ,  Namhyun LEE

    IPC: H01L29/78 ,  H01L29/10 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423

    Abstract: A semiconductor device including a substrate having a central region and a peripheral region; an integrated circuit structure on the central region; and a first structure on the peripheral region and surrounding the central region, wherein a portion of the first structure includes a first fin structure defined by a device isolation region in the substrate; a first dielectric layer covering an upper surface and side surfaces of the first fin structure and an upper surface of the device isolation region; a first gate structure on the first fin structure, the first gate structure including a first gate conductive layer, a first gate dielectric layer covering lower and side surfaces of the first gate conductive layer, and first gate spacer layers on side walls of the first gate conductive layer; and a first insulating structure covering the first dielectric layer and the first gate structure.

    SEMICONDUCTOR DEVICES
    3.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20240379795A1

    公开(公告)日：2024-11-14

    申请号：US18504981

    申请日：2023-11-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Wooseok PARK ,  Taehyun RYU ,  Namhyun LEE

    IPC: H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/786

    Abstract: A semiconductor device comprising: a substrate; a first lower pattern on the substrate; a second lower pattern on the first lower pattern; channel patterns on the second lower pattern; a first field insulating layer on a first side surface of the first lower pattern; a second field insulating layer on a second side surface of the first lower pattern; a buried insulating structure on the first field insulating layer and on side surfaces of the channel patterns; a protective layer on the second field insulating layer; source/drain patterns on sides of each of the channel patterns; and a gate electrode extending around the channel patterns and the buried insulating structure, wherein the protective layer comprises: a protective insulating layer between the first lower pattern and the second lower pattern, and between the gate electrode and the second field insulating layer; and a protective liner extending around the protective insulating layer.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220165887A1

    公开(公告)日：2022-05-26

    申请号：US17370464

    申请日：2021-07-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seungmin SONG ,  Taeyong KWON ,  Jaehyeoung MA ,  Namhyun LEE

    IPC: H01L29/786 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

    Abstract: A semiconductor device including a substrate including a division region extending in a first direction, first and second active patterns on the substrate with the division region interposed therebetween, the first and the second active patterns being spaced apart from each other in a second direction perpendicular to the first direction, gate electrodes extending in the first direction and crossing the first and second active patterns, a first channel pattern on the first active pattern, and a second channel pattern on the second active pattern may be provided. The smallest width of the first active pattern may be smaller than the smallest width of the second active pattern, in the first direction. An end portion of the first channel pattern adjacent to the division region may include a protruding portion extending in the first direction, and the protruding portion may have a triangle shape in a plan view.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250072066A1

    公开(公告)日：2025-02-27

    申请号：US18412812

    申请日：2024-01-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Wooseok PARK ,  Wookhwan SONG ,  Donghoon HWANG ,  Myungil KANG ,  Taehyun RYU ,  Namhyun LEE

    IPC: H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

    Abstract: A semiconductor device may include a first active pattern, a second active pattern spaced apart at a first distance from the first active pattern, a third active pattern spaced apart at a second distance from the second active pattern, a first device isolation layer between the first and second active patterns, a second device isolation layer between the second and third active patterns, a first channel structure overlapping the first active pattern, a second channel structure overlapping the second active pattern, a third channel structure overlapping the third active pattern, and a separation dielectric layer between the first and second channel structures. The separation dielectric layer may overlap the first device isolation layer. A level of a top surface of the first device isolation layer may be higher than a level of a top surface of the second device isolation layer.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240413252A1

    公开(公告)日：2024-12-12

    申请号：US18812404

    申请日：2024-08-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seungmin SONG ,  Taeyong KWON ,  Jaehyeoung MA ,  Namhyun LEE

    IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

    Abstract: A semiconductor device including a substrate including a division region extending in a first direction, first and second active patterns on the substrate with the division region interposed therebetween, the first and the second active patterns being spaced apart from each other in a second direction perpendicular to the first direction, gate electrodes extending in the first direction and crossing the first and second active patterns, a first channel pattern on the first active pattern, and a second channel pattern on the second active pattern may be provided. The smallest width of the first active pattern may be smaller than the smallest width of the second active pattern, in the first direction. An end portion of the first channel pattern adjacent to the division region may include a protruding portion extending in the first direction, and the protruding portion may have a triangle shape in a plan view.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220037521A1

    公开(公告)日：2022-02-03

    申请号：US17205282

    申请日：2021-03-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junggun YOU ,  Joohee JUNG ,  Jaehyeoung MA ,  Namhyun LEE

    IPC: H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L27/088 ,  H01L29/06

    Abstract: A semiconductor device including a substrate having a central region and a peripheral region; an integrated circuit structure on the central region; and a first structure on the peripheral region and surrounding the central region, wherein a portion of the first structure includes a first fin structure defined by a device isolation region in the substrate; a first dielectric layer covering an upper surface and side surfaces of the first fin structure and an upper surface of the device isolation region; a first gate structure on the first fin structure, the first gate structure including a first gate conductive layer, a first gate dielectric layer covering lower and side surfaces of the first gate conductive layer, and first gate spacer layers on side walls of the first gate conductive layer; and a first insulating structure covering the first dielectric layer and the first gate structure.

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