SYSTEM AND METHOD FOR TREATING SUBSTRATE
    4.
    发明申请
    SYSTEM AND METHOD FOR TREATING SUBSTRATE 审中-公开
    用于处理基板的系统和方法

    公开(公告)号:US20150318146A1

    公开(公告)日:2015-11-05

    申请号:US14687638

    申请日:2015-04-15

    Inventor: Je Ho KIM

    Abstract: Provided are a system and a method for treating a substrate. The substrate treating system may include a process chamber including a body with an open top and a dielectric window hermetically sealing the top of the body from an outside, a supporting unit provided in the process chamber to support a substrate, a gas-supplying unit supplying a process gas into the process chamber, a plasma source provided outside the process chamber to generate plasma from the process gas supplied into the process chamber, and a heating unit heating the dielectric window. The heating unit may include a heater and a thermally conductive layer provided on one of surfaces of the dielectric window.

    Abstract translation: 提供了一种用于处理基板的系统和方法。 基板处理系统可以包括处理室,该处理室包括具有敞开顶部的主体和从外部密封该主体顶部的介电窗口,设置在处理室中以支撑基板的支撑单元,供应单元 进入处理室的处理气体,设置在处理室外部的等离子体源,以从供应到处理室中的工艺气体产生等离子体,以及加热单元加热电介质窗口。 加热单元可以包括加热器和设置在电介质窗口的一个表面上的导热层。

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