公开(公告)号：US12142492B2

公开(公告)日：2024-11-12

申请号：US16952071

申请日：2020-11-18

Applicant: SEMES CO., LTD.

Inventor： Ji-Hwan Lee ,  Seong Gil Lee ,  Dong Sub Oh ,  Myoungsub Noh ,  Dong-Hun Kim ,  Wan Jae Park

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: A method for processing a substrate includes providing the substrate, a film being formed on the substrate, performing pretreatment to surface-treat the film formed on the substrate using a treatment gas in a plasma state, and performing, after the pretreatment, liquid treatment to remove the film from the substrate by supplying a treatment liquid onto the substrate.

公开(公告)号：US20240194500A1

公开(公告)日：2024-06-13

申请号：US18536378

申请日：2023-12-12

Applicant: SEMES CO., LTD.

Inventor： Seonggil Lee ,  Wanjae Park ,  Dongsub Oh ,  Myoungsub Noh ,  Hyejoon Kheel

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32449 ,  H01J37/32477 ,  H01L21/3065 ,  H01L21/67248 ,  H01J2237/334

Abstract: A substrate processing apparatus includes a plasma space, a processing space, a first gas supplier configured to supply first source gas to the plasma space, and a second gas supplier configured to supply second process gas to the processing space. The first source gas supplies first process gas for etching a first etch target layer in the processing space. The second process gas etches a second etch target layer in the processing space. The first gas supplier and the second gas supplier are separated from each other.