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公开(公告)号:US20180108546A1
公开(公告)日:2018-04-19
申请号:US15785993
申请日:2017-10-17
Applicant: SEMES CO., LTD.
Inventor: Soon-Cheon Cho , Bongkyu Shin , Byeol Han , Hyun Joong Kim
CPC classification number: H01L21/67051 , B08B3/10 , B08B7/0057 , G03F1/82 , H01J37/32495 , H01J37/32623 , H01L21/3065 , H01L21/67086 , H01L21/67103 , H01L21/67109 , H01L21/6831
Abstract: Disclosed are an apparatus and a method for cleaning a component of a substrate dry processing apparatus. The method for cleaning a component of a substrate dry processing apparatus includes dipping the component in a cleaning solution received in a cleaning bath, generating radicals from the cleaning solution, and cleaning the component with the radicals. The component is cleaned with hydrogen radicals (H2*) and hydroxyl radicals (OH*) generated from ozone water. Accordingly, it is possible to rapidly remove carbon (C) and fluorine (F) deposited on the component.
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公开(公告)号:US11967491B2
公开(公告)日:2024-04-23
申请号:US17177135
申请日:2021-02-16
Applicant: SEMES CO., LTD.
Inventor: Soon-Cheon Cho , Su Hyung Lee , Youngran Ko , Juyong Jang
CPC classification number: H01J37/32862 , B08B7/0035 , B08B13/00 , H01J37/3244 , H01L21/67034 , H01J37/32192 , H01J37/32825 , H01J2237/002 , H01J2237/335
Abstract: The present invention provides a method and apparatus for cleaning parts used in substrate processing. In a method for cleaning parts of a substrate processing, plasma generated from cleaning gas is supplied together with a cooling medium to clean the parts, but the cooling medium may be provided at a lower temperature than the plasma.
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公开(公告)号:US20230166285A1
公开(公告)日:2023-06-01
申请号:US18060030
申请日:2022-11-30
Applicant: SEMES CO., LTD.
Inventor: Yun Sang Kim , Yoon Seok Choi , Young Dae Chung , Soon-Cheon Cho , Se Hoon Oh
CPC classification number: B05C5/02 , B05C13/02 , H05B6/78 , H05B6/80 , H05B2206/04
Abstract: Provided are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes: a chamber for providing a processing space; a substrate support unit provided in the processing space to support a substrate and rotate the substrate; a liquid supply unit including a chemical liquid discharge nozzle that discharges a chemical liquid to the substrate supported by the substrate support unit; and a microwave applying member for emitting microwaves to the substrate.
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