公开(公告)号：US20210257251A1

公开(公告)日：2021-08-19

申请号：US17307155

申请日：2021-05-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Motomu KURATA ,  Shinya SASAGAWA ,  Ryota HODO ,  Yuta IIDA ,  Satoru OKAMOTO

IPC: H01L21/768 ,  H01L29/786

Abstract: A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.

公开(公告)号：US20190393079A1

公开(公告)日：2019-12-26

申请号：US16556330

申请日：2019-08-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Motomu KURATA ,  Shinya SASAGAWA ,  Ryota HODO ,  Yuta IIDA ,  Satoru OKAMOTO

IPC: H01L21/768

Abstract: A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.

公开(公告)号：US20240090194A1

公开(公告)日：2024-03-14

申请号：US18232413

申请日：2023-08-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi SATO ,  Ryota HODO ,  Yuta IIDA ,  Tomoaki MORIWAKA

IPC: H10B12/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L23/532

CPC classification number: H10B12/30 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/3212 ,  H01L23/5329 ,  H10B12/02

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

公开(公告)号：US20200043931A1

公开(公告)日：2020-02-06

申请号：US16478532

申请日：2018-01-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi SATO ,  Ryota HODO ,  Yuta IIDA ,  Tomoaki MORIWAKA

IPC: H01L27/108 ,  H01L23/532 ,  H01L21/311 ,  H01L21/02 ,  H01L21/321

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

公开(公告)号：US20220359523A1

公开(公告)日：2022-11-10

申请号：US17849854

申请日：2022-06-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi SATO ,  Ryota HODO ,  Yuta IIDA ,  Tomoaki MORIWAKA

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L23/532

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

公开(公告)号：US20200335630A1

公开(公告)日：2020-10-22

申请号：US16954585

申请日：2018-12-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuta IIDA ,  Ryota HODO ,  Kentaro SUGAYA ,  Ryu KOMATSU ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/105 ,  H01L27/12 ,  H01L29/24 ,  H01L21/02 ,  H01L21/443 ,  H01L29/66

Abstract: A semiconductor device with high on-state current is provided. The semiconductor device including a first oxide; a first conductor and a second conductor that are positioned over the first oxide; a third conductor positioned to cover the first conductor; a fourth conductor positioned to cover the second conductor; a first insulator having an opening overlapping with a region between the third conductor and the fourth conductor; a fifth conductor positioned in the opening; a second insulator positioned between the fifth conductor, and the first oxide and the first insulator; a second oxide positioned between the second insulator, and the first oxide and the first insulator; and a third insulator that is positioned between the second oxide, and the third conductor and the fourth conductor, and the first insulator and does not overlap with the first oxide in the region sandwiched between the third conductor and the fourth conductor, where the third conductor and the fourth conductor each have a region overlapping with the fifth conductor.

公开(公告)号：US20230268361A1

公开(公告)日：2023-08-24

申请号：US18105407

申请日：2023-02-03

Applicant: Semiconductor Energy Laboratory Co., Ltd

Inventor： Motomu Kurata ,  Ryota HODO ,  Yuta IIDA

IPC: H01L27/146 ,  H01L21/768 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/14621 ,  H01L21/76802 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L21/8258

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes a first opening, a second opening, and a third opening which are formed by performing first etching and second etching. By the first etching, the first insulator is etched for forming the first opening, the second opening, and the third opening. By the second etching, the first metal oxide, the second insulator, the third insulator, the fourth insulator, the second metal oxide, and the fifth insulator are etched for forming the first opening; the first metal oxide, the second insulator, and the third insulator are etched for forming the second opening; and the first metal oxide is etched for forming the third opening.

公开(公告)号：US20160307777A1

公开(公告)日：2016-10-20

申请号：US15092973

申请日：2016-04-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Motomu KURATA ,  Shinya SASAGAWA ,  Ryota HODO ,  Yuta IIDA ,  Satoru OKAMOTO

IPC: H01L21/4757 ,  H01L21/473 ,  H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/02063 ,  H01L21/76814 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/7869 ,  H01L2221/1063

Abstract: A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.

Abstract translation: 提供一分钟晶体管。 提供具有低寄生电容的晶体管。 提供具有高频特性的晶体管。 提供包括晶体管的电极。 提供了一种新颖的电极。 电极包括含有金属的第一导电层，绝缘层和第二导电层。 绝缘层形成在第一导电层上。 在绝缘层上形成掩模层。 使用掩模层作为掩模的等离子体蚀刻绝缘层，由此在绝缘层中形成开口以到达第一导电层。 在氧气氛中至少对开口进行等离子体处理。 通过等离子体处理，在开口中的第一导电层上形成含金属的氧化物。 除去氧化物，然后在开口中形成第二导电层。