公开(公告)号：US20190051805A1

公开(公告)日：2019-02-14

申请号：US16158305

申请日：2018-10-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Hyun A KIM ,  Jong Kyu KIM ,  Hyoung Jin LIM

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/50 ,  H01L33/10 ,  H01L25/075 ,  H01L33/64

Abstract: A light emitting diode includes a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell. An n-electrode pad is connected to the first contact layer; and a p-electrode pad is connected to the reflection structure on the second light emitting cell. The first light emitting cell and the second light emitting cell are isolated from each other, and their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.

公开(公告)号：US20210151628A1

公开(公告)日：2021-05-20

申请号：US17157600

申请日：2021-01-25

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  Min Woo KANG ,  Se Hee OH ,  Hyoung Jin LIM

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44

Abstract: A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

公开(公告)号：US20220208851A1

公开(公告)日：2022-06-30

申请号：US17697410

申请日：2022-03-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  So Ra LEE ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Se Hee OH ,  Hyun A. KIM ,  Hyoung Jin LIM

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US20200295229A1

公开(公告)日：2020-09-17

申请号：US16885536

申请日：2020-05-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  Min Woo KANG ,  Se Hee OH ,  Hyoung Jin LIM

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44

Abstract: A chip-scale package type light emitting diode includes: a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer, in which the openings of the dielectric layer include a narrow and elongated bar-shaped opening adjacent to at least one of the first openings of the lower insulation layer.

公开(公告)号：US20240055563A1

公开(公告)日：2024-02-15

申请号：US18449179

申请日：2023-08-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  Min Woo KANG ,  Se Hee OH ,  Hyoung Jin LIM

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/382 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L33/32

Abstract: A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

公开(公告)号：US20210257528A1

公开(公告)日：2021-08-19

申请号：US17246856

申请日：2021-05-03

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Hyun A KIM ,  Jong Kyu KIM ,  Hyoung Jin LIM

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/44 ,  H01L27/15 ,  H01L33/38 ,  H01L33/40 ,  H01L25/075 ,  H01L33/32 ,  H01L33/50 ,  H01L33/64

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa with an active layer and a second conductivity type semiconductor layer disposed thereon, a first contact layer comprising an outer contact portion contacting the first conductivity type semiconductor layer near an edge thereof and an inner contact portion contacting the first conductivity type semiconductor layer in a region surrounded by the outer contact portion; a second contact layer disposed on the mesa and contacting the second conductivity type semiconductor layer; a first insulation layer covering the mesa, insulating the first contact layer, and exposing the first conductivity type semiconductor layer for the outer contact portion and the inner contact portion to contact the first conductivity type semiconductor layer, wherein the outer contact portion and the first insulation layer alternately contact the first conductivity type semiconductor layer along a side surface of the mesa.

公开(公告)号：US20200035751A1

公开(公告)日：2020-01-30

申请号：US16594239

申请日：2019-10-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  So Ra LEE ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Se Hee OH ,  Hyun A. KIM ,  Hyoung Jin LIM

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US20190296204A1

公开(公告)日：2019-09-26

申请号：US16464679

申请日：2017-10-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Hyun A KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Hyoung Jin LIM

IPC: H01L33/64 ,  H01L33/40 ,  H01L33/20 ,  H01L33/62 ,  H01L27/15 ,  H01L33/10

Abstract: A light emitting diode including a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, an ohmic reflection layer disposed on the mesa to form an ohmic contact with the second semiconductor layer, a lower insulation layer covering the mesa and the ohmic reflection layer and partially exposing the first semiconductor layer and the ohmic reflection layer, a first pad metal layer disposed on the lower insulation layer and electrically connected to the first semiconductor layer, a metal reflection layer disposed on the lower insulation layer and laterally spaced apart from the first pad metal layer, and an upper insulation layer covering the first pad metal layer and the metal reflection layer, and having a first opening exposing the first pad metal layer, in which at least a portion of the metal reflection layer covers a side surface of the mesa.