公开(公告)号：US20200035751A1

公开(公告)日：2020-01-30

申请号：US16594239

申请日：2019-10-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  So Ra LEE ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Se Hee OH ,  Hyun A. KIM ,  Hyoung Jin LIM

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US20220208851A1

公开(公告)日：2022-06-30

申请号：US17697410

申请日：2022-03-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  So Ra LEE ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Se Hee OH ,  Hyun A. KIM ,  Hyoung Jin LIM

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US20190189867A1

公开(公告)日：2019-06-20

申请号：US16266717

申请日：2019-02-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM ,  Kyoung Wan KIM ,  Chang Yeon KIM

IPC: H01L33/50 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/20

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

公开(公告)号：US20220158056A1

公开(公告)日：2022-05-19

申请号：US17526072

申请日：2021-11-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Hyun A. KIM ,  Jong Kyu KIM ,  Jong Hyeon CHAE

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/10 ,  H01L33/64 ,  H01L33/44 ,  H01L33/08 ,  H01L33/38 ,  H01L33/40 ,  H01L33/60

Abstract: A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.

公开(公告)号：US20200295232A1

公开(公告)日：2020-09-17

申请号：US16889525

申请日：2020-06-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

公开(公告)号：US20190341527A1

公开(公告)日：2019-11-07

申请号：US16511921

申请日：2019-07-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L33/62 ,  H01L33/60 ,  H01L33/48

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.