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公开(公告)号：US11385544B2
公开(公告)日：2022-07-12
申请号：US16733882
申请日：2020-01-03
摘要： A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), where R100 represents divalent organic group substituted with one or more fluorine atoms; R101 and R102 each independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R103 represents linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R101 and R102, or R101 and R103, are optionally bonded to each other to form a ring with sulfur atom in the formula; and L104 represents a single bond or linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom.
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公开(公告)号：US11914295B2
公开(公告)日：2024-02-27
申请号：US16660992
申请日：2019-10-23
IPC分类号： G03F7/07 , G03F7/11 , G03F7/36 , C08G77/14 , C08G77/18 , C08G77/24 , G03F7/075 , C07F7/18 , G03F7/09
CPC分类号： G03F7/0752 , C07F7/1804 , C08G77/14 , C08G77/18 , C08G77/24 , G03F7/0751 , G03F7/0757 , G03F7/091 , G03F7/11 , G03F7/36
摘要： The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3):
where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.-
公开(公告)号：US12085857B2
公开(公告)日：2024-09-10
申请号：US16928777
申请日：2020-07-14
IPC分类号： G03F7/11 , C08G77/18 , C08G77/26 , C09D183/06 , C09D183/08 , G03F7/00 , H01L21/027 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , G03F7/40 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： G03F7/11 , C08G77/18 , C08G77/26 , C09D183/06 , C09D183/08 , G03F7/70383 , H01L21/0274 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2041 , G03F7/325 , G03F7/38 , G03F7/40 , H01L21/3081 , H01L21/3086 , H01L21/31138 , H01L21/32139
摘要： A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where R1 represents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; R2 and R3 are each independently the same as R1 or each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; R100 represents a divalent organic group substituted with a fluorine atom; R101 and R102 each independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R103 represents a divalent hydrocarbon group having 1 to 20 carbon atoms; and L104 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.
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4.发明公开公开(公告)号：US20230244149A1
公开(公告)日：2023-08-03
申请号：US18184709
申请日：2023-03-16
IPC分类号： G03F7/11 , C08G77/18 , C08G77/26 , C09D183/06 , C09D183/08 , G03F7/20 , H01L21/027
CPC分类号： G03F7/11 , C08G77/18 , C08G77/26 , C09D183/06 , C09D183/08 , G03F7/70383 , H01L21/0274 , G03F7/162
摘要： A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where R1 represents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; R2 and R3 are each independently the same as R1 or each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; R100 represents a divalent organic group substituted with a fluorine atom; R101 and R102 each independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R103 represents a divalent hydrocarbon group having 1 to 20 carbon atoms; and L104 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.
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公开(公告)号：US11592287B2
公开(公告)日：2023-02-28
申请号：US16808637
申请日：2020-03-04
发明人： Tsutomu Ogihara , Tsukasa Watanabe , Yoshio Kawai , Tomohiro Kobayashi , Yusuke Biyajima , Masahiro Kanayama
摘要： A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.
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公开(公告)号：US11555697B2
公开(公告)日：2023-01-17
申请号：US16808637
申请日：2020-03-04
发明人： Tsutomu Ogihara , Tsukasa Watanabe , Yoshio Kawai , Tomohiro Kobayashi , Yusuke Biyajima , Masahiro Kanayama
摘要： A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.
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公开(公告)号：US11480879B2
公开(公告)日：2022-10-25
申请号：US16808664
申请日：2020-03-04
IPC分类号： G03F7/11 , C09D183/06 , C09D183/08 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32 , H01L21/027 , H01L21/311
摘要： The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.
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