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公开(公告)号：US11485824B2
公开(公告)日：2022-11-01
申请号：US16732687
申请日：2020-01-02
IPC分类号： C08G77/18 , G03F7/075 , C08G77/00 , C08G77/08 , C08G77/28 , C08L83/06 , G03F7/42 , H01L21/033
摘要： A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.
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2.发明公开公开(公告)号：US20240319598A1
公开(公告)日：2024-09-26
申请号：US18594575
申请日：2024-03-04
发明人： Takehiro SATO , Shun Kikuchi , Ryo Mitsui , Seiichiro Tachibana
CPC分类号： G03F7/0758 , G03F7/094 , G03F7/167 , G03F7/2016 , G03F7/2037
摘要： The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.
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公开(公告)号：US20190064665A1
公开(公告)日：2019-02-28
申请号：US16108645
申请日：2018-08-22
摘要： A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.
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公开(公告)号：US10754248B2
公开(公告)日：2020-08-25
申请号：US15903652
申请日：2018-02-23
发明人： Takayuki Fujiwara , Ryo Mitsui , Kazuhiro Katayama
IPC分类号： G03F7/039 , G03F7/029 , C07C381/12 , G03F7/004 , C08L33/06 , C07D335/02 , C07C309/20 , C07C69/00 , C07D333/46 , C07C309/12 , G03F7/20 , C08K5/098 , C08K5/42
摘要： The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion.The present invention was accomplished by a sulfonium salt including an anion and a cation, the cation having a partial structure represented by the following general formula (1), except for a sulfonium salt having a cation represented by the following general formula (1′),
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5.发明授权公开(公告)号：US10696779B2
公开(公告)日：2020-06-30
申请号：US16156293
申请日：2018-10-10
发明人： Jun Hatakeyama , Yuji Harada , Shiori Nonaka , Ryo Mitsui , Osamu Watanabe
IPC分类号： C08G18/00 , C08G18/38 , C07F7/08 , C08G18/75 , C08G77/458 , C08G18/61 , C09D175/16 , C08J5/18
摘要： The present invention provides a silicon-containing compound shown by the following formula (1): wherein R1, R2, R3, R4, R5, and R6 each independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by —(OSiR7R8)n—OSiR9R10R11; R7, R8, R9, R10, and R11 have the same meanings as R1 to R6; “n” is an integer in the range of 0 to 100; and “A” represents a linear or branched alkylene group having 1 to 6 carbon atoms. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.
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公开(公告)号：US11215926B2
公开(公告)日：2022-01-04
申请号：US16108645
申请日：2018-08-22
IPC分类号： G03F7/06 , G03F7/004 , G03F7/033 , C07D333/76 , C07D327/08 , G03F7/32 , C07D339/08 , G03F7/039 , C07C381/12 , C07C323/64
摘要： A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.
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公开(公告)号：US10025180B2
公开(公告)日：2018-07-17
申请号：US15690846
申请日：2017-08-30
IPC分类号： G03F7/004 , G03F7/16 , G03F7/20 , G03F7/32 , C07C309/20 , C07C309/02 , C07C381/12 , G03F7/38
摘要： A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.
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公开(公告)号：US11914295B2
公开(公告)日：2024-02-27
申请号：US16660992
申请日：2019-10-23
IPC分类号： G03F7/07 , G03F7/11 , G03F7/36 , C08G77/14 , C08G77/18 , C08G77/24 , G03F7/075 , C07F7/18 , G03F7/09
CPC分类号： G03F7/0752 , C07F7/1804 , C08G77/14 , C08G77/18 , C08G77/24 , G03F7/0751 , G03F7/0757 , G03F7/091 , G03F7/11 , G03F7/36
摘要： The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3):
where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.-
9.发明授权公开(公告)号：US10717804B2
公开(公告)日：2020-07-21
申请号：US16123697
申请日：2018-09-06
发明人： Jun Hatakeyama , Shiori Nonaka , Yuji Harada , Ryo Mitsui , Osamu Watanabe
IPC分类号： C08G18/73 , C08G18/38 , C08G18/75 , C08G18/76 , C08G18/79 , C08J5/18 , C07F7/08 , C09D175/16 , C08G77/458 , C08G18/61 , H04B1/3827
摘要： The present invention provides a silicon-containing compound shown by the following formula (1): wherein R1, R2, R3, R4, R5, and R6 each independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by —(OSiR7R8)n—OSiR9R10R11; R7, R8, R9, R10, and R11 have the same meanings as R1 to R6; X represents a linear or branched alkylene group having 3 to 7 carbon atoms optionally having an ether group; and “n” is an integer in the range of 0 to 100. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.
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公开(公告)号：US20180059543A1
公开(公告)日：2018-03-01
申请号：US15690846
申请日：2017-08-30
CPC分类号： G03F7/0045 , C07C309/02 , C07C309/20 , C07C381/12 , C07C2602/42 , C07C2603/68 , C07C2603/74 , C07D327/08 , C07D333/76 , C07D339/08 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/16 , G03F7/2004 , G03F7/2041 , G03F7/2053 , G03F7/322 , G03F7/325 , G03F7/38
摘要： A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.
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