公开(公告)号：US20160379860A1

公开(公告)日：2016-12-29

申请号：US15260152

申请日：2016-09-08

Applicant: SHOWA DENKO K.K.

Inventor： Yoshiaki KAGESHIMA ,  Daisuke MUTO ,  Kenji MOMOSE ,  Yoshihiko MIYASAKA

IPC: H01L21/68 ,  C23C16/52 ,  C23C16/32 ,  H01L21/02

CPC classification number: H01L21/681 ,  C23C16/325 ,  C23C16/4401 ,  C23C16/52 ,  C30B25/02 ,  C30B25/12 ,  C30B25/16 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/1608 ,  H01L29/34

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract translation: 本发明的SiC外延片制造方法包括：使用SiC外延晶片制造装置，在SiC单晶晶片的表面上制造包括SiC外延层的SiC外延晶片，同时将原料气体供给到室内; 并且在测量由先前制造的SiC外延晶片的SiC外延层上的室的内部部件的材料的三角形缺陷的表面密度测量后制造随后的SiC外延晶片。

公开(公告)号：US20140339571A1

公开(公告)日：2014-11-20

申请号：US14447137

申请日：2014-07-30

Applicant: SHOWA DENKO K.K.

Inventor： Kenji MOMOSE ,  Yutaka TAJIMA ,  Yasuyuki SAKAGUCHI ,  Michiya ODAWARA ,  Yoshihiko MIYASAKA

IPC: H01L29/06 ,  H01L29/16

CPC classification number: H01L29/0684 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/1608

Abstract: A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is 5 mm−1 or less.

Abstract translation: 通过在以0.4°〜5°的偏角倾斜的4H-SiC单晶基板上形成SiC外延层而获得的SiC外延片，其中连接到浅凹坑的步进串联的线密度为 由于SiC外延片中的螺旋位错为5mm-1以下。