公开(公告)号：US20170233893A1

公开(公告)日：2017-08-17

申请号：US15587258

申请日：2017-05-04

Applicant: SHOWA DENKO K.K.

Inventor： Akira MIYASAKA ,  Yutaka TAJIMA ,  Yoshiaki KAGESHIMA ,  Daisuke MUTO ,  Kenji MOMOSE

IPC: C30B29/36 ,  C23C16/32 ,  H01L21/02 ,  C30B25/20 ,  H01L29/16 ,  H01L29/34

CPC classification number: H01L21/0262 ,  C23C16/325 ,  C30B25/00 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L22/12 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/34

Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).

公开(公告)号：US20160379860A1

公开(公告)日：2016-12-29

申请号：US15260152

申请日：2016-09-08

Applicant: SHOWA DENKO K.K.

Inventor： Yoshiaki KAGESHIMA ,  Daisuke MUTO ,  Kenji MOMOSE ,  Yoshihiko MIYASAKA

IPC: H01L21/68 ,  C23C16/52 ,  C23C16/32 ,  H01L21/02

CPC classification number: H01L21/681 ,  C23C16/325 ,  C23C16/4401 ,  C23C16/52 ,  C30B25/02 ,  C30B25/12 ,  C30B25/16 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/1608 ,  H01L29/34

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract translation: 本发明的SiC外延片制造方法包括：使用SiC外延晶片制造装置，在SiC单晶晶片的表面上制造包括SiC外延层的SiC外延晶片，同时将原料气体供给到室内; 并且在测量由先前制造的SiC外延晶片的SiC外延层上的室的内部部件的材料的三角形缺陷的表面密度测量后制造随后的SiC外延晶片。

公开(公告)号：US20180016706A1

公开(公告)日：2018-01-18

申请号：US15553248

申请日：2016-02-16

Applicant: SHOWA DENKO K.K.

Inventor： Jun NORIMATSU ,  Akira MIYASAKA ,  Yoshiaki KAGESHIMA ,  Koji KAMEI ,  Daisuke MUTO

IPC: C30B29/36 ,  H01L21/205 ,  H01L21/20

CPC classification number: C30B29/36 ,  H01L21/20 ,  H01L21/2003 ,  H01L21/205 ,  H01L21/2053

Abstract: An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.

公开(公告)号：US20160312381A1

公开(公告)日：2016-10-27

申请号：US15102314

申请日：2014-10-30

Applicant: SHOWA DENKO K.K.

Inventor： Jun NORIMATSU ,  Akira MIYASAKA ,  Yoshiaki KAGESHIMA

IPC: C30B25/12 ,  C30B25/14 ,  C30B29/36 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  C30B25/20 ,  C23C16/32

CPC classification number: C30B25/12 ,  C23C16/325 ,  C23C16/45508 ,  C23C16/4584 ,  C30B25/14 ,  C30B25/165 ,  C30B25/20 ,  C30B29/36 ,  C30B31/14 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771

Abstract: The SiC epitaxial wafer-producing apparatus according to the invention includes a mounting plate having a concave accommodation portion, a satellite that is provided in the concave accommodation portion and has an upper surface on which a SiC substrate is placed, and a carbon member that is provided in the concave accommodation portion at a position which is lower than the SiC substrate and does not come into contact with the SiC substrate.

Abstract translation: 根据本发明的SiC外延晶片生产设备包括具有凹入容纳部分的安装板，设置在凹入容纳部分中并具有其上放置有SiC衬底的上表面的卫星，以及位于 设置在比SiC基板低的位置并且不与SiC基板接触的凹入容纳部。