公开(公告)号：US20190144995A1

公开(公告)日：2019-05-16

申请号：US16175936

申请日：2018-10-31

Applicant: SHOWA DENKO K.K.

Inventor： Naoto ISHIBASHI ,  Keisuke FUKADA ,  Yoshikazu UMETA ,  Tomohiro KODAMA

IPC: C23C16/44 ,  C23C16/32 ,  C30B25/14

Abstract: A chemical vapor deposition apparatus is provided which comprises a reaction furnace in which vapor deposition is performed and an exhaust pipe which discharges a gas from an interior of the reaction furnace, wherein the exhaust pipe includes at least one of a bending part, and the bending part includes at least one of a pipe-extension part, and the pipe-extension part extends from the bending part and has a storage space in the pipe-extension part.

公开(公告)号：US20190161886A1

公开(公告)日：2019-05-30

申请号：US16196212

申请日：2018-11-20

Applicant: SHOWA DENKO K.K.

Inventor： Yasunori MOTOYAMA ,  Yoshishige OKUNO ,  Yoshikazu UMETA ,  Keisuke FUKADA

IPC: C30B25/12 ,  C30B25/10 ,  C30B29/36 ,  C23C16/32 ,  C23C16/46 ,  C23C16/458

Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; and a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor, in which an unevenness is formed on a radiation-receiving surface of the susceptor, which faces a first surface of the heater provided at the susceptor side, and the unevenness is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view.

公开(公告)号：US20210202294A1

公开(公告)日：2021-07-01

申请号：US17110637

申请日：2020-12-03

Applicant: SHOWA DENKO K.K.

Inventor： Yuichiro MABUCHI ,  Yoshikazu UMETA

IPC: H01L21/687 ,  C30B25/12 ,  C30B29/36 ,  C23C16/32 ,  C23C16/458

Abstract: A susceptor for supporting a disk-shaped wafer when performing a surface treatment, includes a protruding region, and at least three support parts, provided on the protruding region, and configured to support the disk-shaped wafer by making contact with a back surface of the disk-shaped wafer. A ratio of a total area of the support parts with respect to an area of the protruding region is 10% or less in a plan view of the disk-shaped wafer.

公开(公告)号：US20210066113A1

公开(公告)日：2021-03-04

申请号：US16644250

申请日：2018-06-22

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu UMETA ,  Keisuke FUKADA ,  Naoto ISHIBASHI ,  Hironori ATSUMI

IPC: H01L21/687 ,  H01L21/02 ,  C23C16/458 ,  C23C16/32

Abstract: A susceptor (1) of the present invention is a susceptor that is configured to hold a wafer in a CVD apparatus that forms a layer on a wafer through chemical vapor deposition, and includes an external susceptor (2) and an internal susceptor (1). The external susceptor (2) has an opening (2c) that accommodates the internal susceptor (1) in a coupling manner and has a wafer placement surface (2a) on which an outer peripheral portion (Ws) of a wafer is placed. The internal susceptor (1) includes a projection portion (1a) on a surface (1b) facing the wafer (W), and a height (h) of the projection portion (1a) is a height at which the projection portion does not come into contact with the wafer (W) when the wafer (W) is placed on the susceptor.

公开(公告)号：US20200173023A1

公开(公告)日：2020-06-04

申请号：US16699360

申请日：2019-11-29

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu UMETA ,  Hironori ATSUMI

IPC: C23C16/46 ,  H01L21/02 ,  C23C16/32

Abstract: A SiC chemical vapor deposition apparatus is provided, including: a furnace body inside of which a growth space is formed; and a mounting table which is positioned on a lower portion of the growth space and has a mounting surface on which a SiC wafer is mounted, in which the furnace body is separated into a plurality of members in a vertical direction substantially orthogonal to the mounting table, the plurality of members includes a first portion and a second portion, the first portion includes a protruding part that protrudes in an outer peripheral direction, the second portion includes a hook part on which the protruding part is hung, and the first portion and the second portion are connected to each other by hanging the hook part on the protruding part.

公开(公告)号：US20200083085A1

公开(公告)日：2020-03-12

申请号：US16559844

申请日：2019-09-04

Applicant: SHOWA DENKO K.K.

Inventor： Jia YU ,  Naoto ISHIBASHI ,  Keisuke FUKADA ,  Yoshikazu UMETA ,  Hironori ATSUMI

IPC: H01L21/687 ,  C23C16/458 ,  H01L21/02

Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.

公开(公告)号：US20190161885A1

公开(公告)日：2019-05-30

申请号：US16196246

申请日：2018-11-20

Applicant: SHOWA DENKO K.K.

Inventor： Yasunori MOTOYAMA ,  Yoshishige OKUNO ,  Yoshikazu UMETA ,  Keisuke FUKADA

IPC: C30B25/10 ,  C23C16/46

Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.