公开(公告)号：US12252812B2

公开(公告)日：2025-03-18

申请号：US18434568

申请日：2024-02-06

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'Evelyn ,  Paul M. Von Dollen ,  Lisa M. Gay ,  Douglas W. Pocius ,  Jonathan D. Cook

IPC: C30B7/10 ,  C30B29/40

Abstract: A method for growth of group III metal nitride crystals includes providing one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process.

公开(公告)号：US11453956B2

公开(公告)日：2022-09-27

申请号：US16550947

申请日：2019-08-26

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B33/06 ,  C30B7/10 ,  H01L21/02 ,  H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B19/06 ,  C30B19/12

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

公开(公告)号：US11047041B2

公开(公告)日：2021-06-29

申请号：US16814813

申请日：2020-03-10

Applicant: SLT Technologies, Inc

Inventor： Douglas W. Pocius ,  Derrick S. Kamber ,  Mark P. D'Evelyn ,  Jonathan D. Cook

IPC: C23C16/30 ,  C23C16/44 ,  C30B7/10 ,  C30B29/40 ,  C23C16/01 ,  C01B21/06 ,  C23C16/448

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

公开(公告)号：US10094017B2

公开(公告)日：2018-10-09

申请号：US15011266

申请日：2016-01-29

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Douglas W. Pocius ,  Derrick S. Kamber ,  Mark P. D'Evelyn ,  Jonathan D. Cook

IPC: C23C16/30 ,  C23C16/44 ,  C30B7/10 ,  C30B29/40 ,  C23C16/01 ,  C01B21/06

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

公开(公告)号：US12024795B2

公开(公告)日：2024-07-02

申请号：US17514656

申请日：2021-10-29

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'Evelyn ,  Paul M. Von Dollen ,  Lisa M. Gay ,  Douglas W. Pocius ,  Jonathan D. Cook

IPC: C30B7/10 ,  C30B29/40

CPC classification number: C30B7/105 ,  C30B29/403

Abstract: A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and exposing the seed crystal to a mineralizer that is formed from the condensable mineralizer composition transferred from the receiving vessel.