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    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE
    3.
    发明申请
    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE 有权

    公开(公告)号：US20210246571A1

    公开(公告)日：2021-08-12

    申请号：US17173170

    申请日：2021-02-10

    Applicant: SLT Technologies, Inc

    Inventor： Drew W. CARDWELL ,  Mark P. D'EVELYN

    IPC: C30B25/18 ,  C30B29/40 ,  C30B25/04

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE
    4.
    发明公开
    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE 审中-公开

    公开(公告)号：US20230340695A1

    公开(公告)日：2023-10-26

    申请号：US18338280

    申请日：2023-06-20

    Applicant: SLT Technologies, Inc.

    Inventor： Dirk EHRENTRAUT ,  Mark P. D'EVELYN ,  Drew W. CARDWELL

    IPC: C30B29/60 ,  C30B29/40 ,  C30B7/10

    CPC classification number: C30B29/605 ,  C30B29/403 ,  C30B29/406 ,  C30B7/105

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    METHODS FOR COUPLING OF OPTICAL FIBERS TO A POWER PHOTODIODE
    5.
    发明申请
    METHODS FOR COUPLING OF OPTICAL FIBERS TO A POWER PHOTODIODE 有权

    公开(公告)号：US20210167232A1

    公开(公告)日：2021-06-03

    申请号：US17151110

    申请日：2021-01-15

    Applicant: SLT Technologies, Inc

    Inventor： Drew W. CARDWELL ,  Mark P. D'EVELYN

    IPC: H01L31/0232 ,  H01L31/109 ,  G01J1/04 ,  G01J1/44

    Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

    GROUP III NITRIDE SUBSTRATE WITH OXYGEN GRADIENT, METHOD OF MAKING, AND METHOD OF USE
    6.
    发明公开
    GROUP III NITRIDE SUBSTRATE WITH OXYGEN GRADIENT, METHOD OF MAKING, AND METHOD OF USE 审中-公开

    公开(公告)号：US20230167586A1

    公开(公告)日：2023-06-01

    申请号：US18072684

    申请日：2022-11-30

    Applicant: SLT Technologies, Inc.

    Inventor： Mark P. D'EVELYN ,  Keiji FUKUTOMI ,  Drew W. CARDWELL ,  David N. ITALIANO ,  Chiaki DOMOTO

    IPC: C30B29/40

    CPC classification number: C30B29/406 ,  C30B7/105

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYSTAL GROWN THEREBY
    9.
    发明公开
    PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYSTAL GROWN THEREBY 审中-公开

    公开(公告)号：US20240247406A1

    公开(公告)日：2024-07-25

    申请号：US18418141

    申请日：2024-01-19

    Applicant: SLT Technologies, Inc.

    Inventor： Drew W. CARDWELL ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN ,  Rajeev Tirumala PAKALAPATI

    IPC: C30B29/40 ,  C30B7/10

    CPC classification number: C30B29/403 ,  C30B7/105

    Abstract: Embodiments of the disclosure include a free-standing crystal, comprising a group III metal and nitrogen. The free-standing crystal may comprise: a wurtzite crystal structure; a growth direction, the growth direction being selected from one of [0 0 0 ±1], {1 0 −1 0}, {1 0 −1 ±1}, or {1 0 −1 ±2}. A first surface having a dislocation density between 1 cm−2 and 107 cm−2, the dislocations having an orientation within 30 degrees of the growth direction, and an average impurity concentration of H greater than 1017 cm−3. The free-standing crystal having at least four sets of bands, wherein each set of bands includes a first sub-band and a second sub-band, the first sub-band having a concentration of at least one impurity selected from H, O, Li, Na, K, F, Cl, Br, and I; and each of the at least four sets of bands have portions that are substantially parallel.

    APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USE
    10.
    发明公开
    APPARATUS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USE 审中-公开

    公开(公告)号：US20240158950A1

    公开(公告)日：2024-05-16

    申请号：US18505963

    申请日：2023-11-09

    Applicant: SLT Technologies, Inc.

    Inventor： Paul M. VON DOLLEN ,  Drew W. CARDWELL ,  Mark P. D'EVELYN ,  Rajeev Tirumala PAKALAPATI

    IPC: C30B7/10

    CPC classification number: C30B7/105 ,  C30B29/403

    Abstract: According to the present disclosure, techniques related to processing of materials for growth of crystals are provided. More particularly, the present disclosure provides apparatus and methods for heating of seed crystals suitable for use in conjunction with a high-pressure vessel for crystal growth of a material having a retrograde solubility in a supercritical fluid, including crystal growth of a group III metal nitride crystal by an ammonobasic or ammonoacidic technique, but there can be others. In other embodiments, the present disclosure provides methods suitable for synthesis of crystalline nitride materials, but it would be recognized that other crystals and materials can also be processed. Such crystals and materials include, but are not limited to, GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, among other devices.

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