公开(公告)号：US20180195206A1

公开(公告)日：2018-07-12

申请号：US15865391

申请日：2018-01-09

Applicant: SORAA, INC.

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Mark P. D'Evelyn

IPC: C30B29/40 ,  C01B21/06

CPC classification number: C30B29/406 ,  C01B21/0632 ,  C01P2002/30 ,  C01P2002/74 ,  C01P2002/80 ,  C01P2006/80 ,  C30B7/105

Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3; an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1; and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm

公开(公告)号：US09275912B1

公开(公告)日：2016-03-01

申请号：US14013753

申请日：2013-08-29

Applicant: SORAA, INC.

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Bradley C. Downey ,  Mark P. D'Evelyn

IPC: H01L29/04 ,  H01L31/036 ,  H01L33/16 ,  H01L21/66

CPC classification number: H01L22/12 ,  H01L22/24

Abstract: Methods for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, are disclosed. The methods include providing a gallium-containing nitride crystal, wafer, or device, processing the gallium-containing nitride crystal, wafer, or device in an etchant solution comprising one or more of H3PO4, H3PO4 that has been conditioned by prolonged heat treatment to form polyphosphoric acid, and H2SO4; removing the gallium-containing nitride crystal, wafer, or device from the etchant solution; and quantifying the concentration of at least one of etch pits or etch grooves.

Abstract translation: 公开了用于量化含氮氮化物晶体，晶片或器件中的扩展缺陷的方法。 所述方法包括提供含镓氮化物晶体，晶片或器件，在包含通过长时间热处理调理的H3PO4，H3PO4中的一种或多种的蚀刻剂溶液中处理含镓氮化物晶体，晶片或器件以形成 多磷酸和H2SO4; 从蚀刻剂溶液中除去含镓氮化物晶体，晶片或器件; 以及量化蚀刻坑或蚀刻槽中的至少一个的浓度。

公开(公告)号：US09589792B2

公开(公告)日：2017-03-07

申请号：US14089281

申请日：2013-11-25

Applicant: SORAA, INC.

Inventor： Wenkan Jiang ,  Mark P. D'Evelyn ,  Derrick S. Kamber ,  Dirk Ehrentraut ,  Michael Krames

IPC: H01L29/20 ,  H01L21/02 ,  H01L33/00 ,  C30B7/10 ,  C30B29/40

CPC classification number: H01L21/0254 ,  C30B7/105 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0075

Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

Abstract translation: 公开了具有局部近似线性的穿透位错阵列的高品质氨热III族金属氮化物晶体，制造高品质氨热III族金属氮化物晶体的方法，以及使用这种晶体的方法。 该晶体可用于种子块状晶体生长，并且用作发光二极管，激光二极管，晶体管，光电探测器，太阳能电池和用于氢发生器件的光电化学水分解的衬底。

公开(公告)号：US09543392B1

公开(公告)日：2017-01-10

申请号：US14485516

申请日：2014-09-12

Applicant: SORAA, INC.

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Mark P. D'Evelyn

IPC: H01L33/00 ,  H01L29/20 ,  C30B29/40 ,  H01L29/04 ,  H01L29/36 ,  H01L21/02 ,  C30B7/10

CPC classification number: H01L29/2003 ,  C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L29/045 ,  H01L29/36 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/32

Abstract: Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.

Abstract translation: 公开了用作用于制造用于电子和/或光电应用的GaN器件的基板的大面积，低成本的单晶透明含镓氮化物晶体。 含氮氮化物晶体是通过控制在氨热生长和加工过程中的杂质浓度来控制点缺陷物质的相对浓度而形成的。