公开(公告)号：US20180262186A1

公开(公告)日：2018-09-13

申请号：US15779432

申请日：2017-01-23

Applicant: SOUTHEAST UNIVERSITY ,  SOUTHEAST UNIVERSITY-WUXI INTEGRATED CIRCUIT TECHNOLOGY RESEARCH INSTITUTE

Inventor： Weifeng SUN ,  Yunwu ZHANG ,  Kuo YU ,  Jing ZHU ,  Shen XU ,  Qinsong QIAN ,  Siyang LIU ,  Shengli LU ,  Longxing SHI

IPC: H03K17/06 ,  H03K17/687 ,  H03K17/16

CPC classification number: H03K17/063 ,  H01L27/0727 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/7835 ,  H03K17/162 ,  H03K17/6871 ,  H03K19/0185 ,  H03K2217/0063 ,  H03K2217/0081

Abstract: Parasitic high-voltage diodes implemented by integration technology in a high-voltage level shift circuit are used for charging a bootstrap capacitor CB, wherein a power supply end of the high voltage level shift circuit is a high-side floating power supply VB, and a reference ground is a floating voltage PGD that is controlled by a bootstrap control circuit. A first parasitic diode DB1 and a second parasitic diode DB2 are provided between the VB and the PGD. The bootstrap control circuit is controlled by a high-side signal and a low-side signal.

公开(公告)号：US20220376094A1

公开(公告)日：2022-11-24

申请号：US17762212

申请日：2020-08-26

Applicant: SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Long ZHANG ,  Jie MA ,  Yan GU ,  Sen ZHANG ,  Jing ZHU ,  Jinli GONG ,  Weifeng SUN ,  Longxing SHI

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06

Abstract: An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.

公开(公告)号：US20220157975A1

公开(公告)日：2022-05-19

申请号：US17606216

申请日：2020-03-31

Applicant: SOUTHEAST UNIVERSITY

Inventor： Jing ZHU ,  Ankang LI ,  Long ZHANG ,  Weifeng SUN ,  Shengli LU ,  Longxing SHI

IPC: H01L29/739 ,  H01L29/10

Abstract: A lateral insulated gate bipolar transistor (IGBT) with a low turn-on overshoot current is provided to reduce a peak value of a current flowing through a device during turn-on of a second gate pulse while preventing a current capability and a withstand voltage capability from being degraded. The lateral IGBT includes: a buried oxygen arranged on a P-type substrate, an N-type drift region arranged on the buried oxygen, on which a P-type body region and an N-type buffer region are arranged, a P-type collector region arranged in the N-type buffer region, a field oxide layer arranged above the N-type drift region, a P-type well region arranged in the P-type body region, and a P-type emitter region and an emitter region arranged in the P-type well region, where inner boundaries of the foregoing 4 regions are synchronously recessed to form a pinch-off region. A gate oxide layer is arranged on a surface of the P-type body region, and a polysilicon gate is arranged on the gate oxide layer. The polysilicon gate includes a first gate located above the surface of the P-type body region and a second gate located above the pinch-off region and the N-type drift region. The first gate is connected to a first gate resistor, and the second gate is connected to a second gate resistor.

公开(公告)号：US20210218396A1

公开(公告)日：2021-07-15

申请号：US17044623

申请日：2020-04-15

Applicant: SOUTHEAST UNIVERSITY

Inventor： Jing ZHU ,  Weifeng SUN ,  Bowei YANG ,  Siyuan YU ,  Yangyang LU ,  Longxing SHI ,  Shengli LU

IPC: H03K17/687 ,  H03K19/20

Abstract: The present invention discloses a gate drive circuit for reducing a reverse recovery current of a power device, and belongs to the field of basic electronic circuit technologies. The gate drive circuit includes a high-voltage LDMOS transistor, a diode forming a freewheeling path when the diode is turned on or a low-voltage MOS transistor in anti-parallel connection with a body diode, and a voltage detection circuit. When the power device is turned off, a freewheeling current produced by an inductive load flows through a freewheeling diode, the voltage detection circuit detects that the freewheeling diode is turned on, and an output signal is processed by a control circuit, to cause the drive circuit to output a high level, so that channels of the power device and the high-voltage LDMOS transistor are turned on, the freewheeling current flows through the conductive channels, almost not through the freewheeling diode, and there is no reverse recovery current in the freewheeling diode at this time, thereby reducing the reverse recovery current of the power device.