公开(公告)号：US20240170422A1

公开(公告)日：2024-05-23

申请号：US18429418

申请日：2024-01-31

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Wagno Alves Braganca, JR. ,  KyungOe Kim ,  TaeKeun Lee

IPC: H01L23/00 ,  B23K1/005 ,  H05K3/34

CPC classification number: H01L24/06 ,  B23K1/0056 ,  H01L24/03 ,  H05K3/34 ,  H01L2224/0363 ,  H05K2203/107

Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

公开(公告)号：US20220415744A1

公开(公告)日：2022-12-29

申请号：US17304659

申请日：2021-06-24

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： KyungOe Kim ,  Wagno Alves Braganca, JR. ,  DongSam Park

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

公开(公告)号：US20230260865A1

公开(公告)日：2023-08-17

申请号：US18305913

申请日：2023-04-24

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： KyungOe Kim ,  Wagno Alves Braganca, JR. ,  DongSam Park

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/367 ,  H01L21/565 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4871 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/15311 ,  H01L2924/18161

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

公开(公告)号：US20210296268A1

公开(公告)日：2021-09-23

申请号：US17068233

申请日：2020-10-12

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Wagno Alves Braganca, JR. ,  KyungOe Kim ,  TaeKeun Lee

IPC: H01L23/00 ,  H05K3/34 ,  B23K1/005

Abstract: A method of making a semiconductor device involves the steps of disposing a first semiconductor die over a substrate and disposing a beam homogenizer over the first semiconductor die. A beam from the beam homogenizer impacts the first semiconductor die. The method further includes the steps of determining a positional offset of the beam relative to the first semiconductor die in a number of pixels, using a first calibration equation to convert the number of pixels into a distance in millimeters, and moving the beam homogenizer the distance in millimeters to align the beam and first semiconductor die.

公开(公告)号：US20240421024A1

公开(公告)日：2024-12-19

申请号：US18816920

申请日：2024-08-27

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： KyungOe Kim ,  Wagno Alves Braganca, JR. ,  DongSam Park

IPC: H01L23/367 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

公开(公告)号：US20230307414A1

公开(公告)日：2023-09-28

申请号：US18315991

申请日：2023-05-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Wagno Alves Braganca, JR. ,  KyungOe Kim

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L24/97 ,  H01L24/81 ,  H01L24/16 ,  H01L21/6835 ,  H01L21/78 ,  H01L2224/81005 ,  H01L2924/3511 ,  H01L2224/16235 ,  H01L2224/81224 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/95001

Abstract: A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.

公开(公告)号：US20230077132A1

公开(公告)日：2023-03-09

申请号：US17447001

申请日：2021-09-07

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Wagno Alves Braganca, JR. ,  KyungOe Kim

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/78

Abstract: A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.

公开(公告)号：US20220399236A1

公开(公告)日：2022-12-15

申请号：US17342935

申请日：2021-06-09

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Wagno Alves Braganca, JR. ,  KyungOe Kim

IPC: H01L21/66 ,  H01L23/00 ,  G06T7/13 ,  G06T7/136 ,  H04N5/33

Abstract: A semiconductor device is formed by providing a semiconductor die. A laser-assisted bonding (LAB) assembly is disposed over the semiconductor die. The LAB assembly includes an infrared (IR) camera. The IR camera is used to capture an image of the semiconductor die. Image processing is performed on the image to identify corners of the semiconductor die. Regions of interest (ROI) are identified in the image relative to the corners of the semiconductor die. Parameters can be used to control the size and location of the ROI relative to the respective corners. The ROI are monitored for temperature using the IR camera while LAB is performed.