公开(公告)号：US20150108427A1

公开(公告)日：2015-04-23

申请号：US14383833

申请日：2013-03-15

Applicant: STC. UNM

Inventor： Steven R.J. Brueck ,  Seung-Chang Lee ,  Christian Wetzel ,  Theeradetch Detchprohm ,  Christoph Stark

IPC: H01L29/20 ,  H01L21/02 ,  H01L29/15

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02587 ,  H01L21/02598 ,  H01L21/02658 ,  H01L29/15 ,  H01L33/16 ,  H01L33/24

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.

Abstract translation: 公开了一种半导体器件。 半导体器件包括包括沟槽的衬底。 在槽的表面上形成缓冲层。 所述缓冲层包含至少一种选自AIN，GaN或Al x Ga 1-x N的材料，其中x在0和1之间。 外延生长的半导体材料设置在缓冲层之上，至少部分外延生长的半导体材料具有立方晶相结构。 还教导了形成半导体器件的方法。