公开(公告)号：US20220208541A1

公开(公告)日：2022-06-30

申请号：US17695400

申请日：2022-03-15

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ruggero ANZALONE ,  Nicolo' FRAZZETTO

IPC: H01L21/02 ,  H01L29/16 ,  H01L21/683 ,  C23C16/01 ,  C23C16/32

Abstract: Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support.

公开(公告)号：US20230295836A1

公开(公告)日：2023-09-21

申请号：US18321652

申请日：2023-05-22

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ruggero ANZALONE ,  Nicolo' FRAZZETTO ,  Francesco La Via

IPC: C30B25/12 ,  C23C16/32 ,  C23C16/458 ,  C30B29/36

CPC classification number: C30B25/12 ,  C23C16/325 ,  C23C16/4583 ,  C30B29/36 ,  H01L21/68785

Abstract: An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

公开(公告)号：US20220172949A1

公开(公告)日：2022-06-02

申请号：US17534156

申请日：2021-11-23

Applicant: STMicroelectronics S.r.l.

Inventor： Ruggero ANZALONE ,  Francesco LA VIA

IPC: H01L21/02 ,  H01L21/67

Abstract: A production process of a SiC wafer carried out in a same reaction chamber includes forming, on a support, a first SiC layer. The support is separated from the first SiC layer. A second SiC layer is grown on the first SiC layer, which includes introducing into the reaction chamber a precursor in the gaseous phase of a first dopant having a first electrical conductivity to generate a first stress in the second SiC layer, and introducing into the reaction chamber a precursor in the gaseous phase of a second dopant having a second electrical conductivity opposite to the first electrical conductivity, to generate a second stress in the second SiC layer that is opposite to, and balances, the first stress. The SiC wafer is thus without effects of warpage.

公开(公告)号：US20210062361A1

公开(公告)日：2021-03-04

申请号：US17009533

申请日：2020-09-01

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ruggero ANZALONE ,  Nicolo' FRAZZETTO ,  Francesco LA VIA

IPC: C30B25/12 ,  C30B29/36 ,  C23C16/32 ,  C23C16/458

Abstract: An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

公开(公告)号：US20180090350A1

公开(公告)日：2018-03-29

申请号：US15715940

申请日：2017-09-26

Applicant: STMICROELECTRONICS S.R.L. ,  Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi

Inventor： Ruggero ANZALONE ,  Nicolo FRAZZETTO ,  Aldo RACITI ,  Marco Antonio SALANITRI ,  Giuseppe ABBONDANZA ,  Giuseppe D'ARRIGO

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67109 ,  C23C16/325 ,  C23C16/4581 ,  C23C16/4586 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02609 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02656 ,  H01L21/02658 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6875 ,  H01L21/68757

Abstract: Various embodiments provide a reaction chamber including a support, a receptacle, and a sponge. The support includes a plurality of bars that are spaced from each other by a plurality of openings. Each of the bars has side surfaces that are slanted or tilted downward such that melted material may readily flow through the openings. The support is covered with a coating of silicon carbide to prevent materials from adhering to the support. The receptacle underlies the support and is configured to collect any melted material that is drained through the openings of the support. The sponge is positioned in the receptacle and under the support. The sponge is configured to absorb any melted material that is collected by the receptacle.