公开(公告)号：US11444110B2

公开(公告)日：2022-09-13

申请号：US17225329

申请日：2021-04-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Boris Rodrigues Goncalves ,  Frederic Lalanne

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/378

Abstract: A pixel includes a photoconversion zone, an insulated vertical electrode and at least one charge storage zone. The photoconversion zone belongs to a first part of a semiconductor substrate and each charge storage zone belongs to a second part of the substrate physically separated from the first part of the substrate by the insulated vertical electrode.

公开(公告)号：US11417789B2

公开(公告)日：2022-08-16

申请号：US16825298

申请日：2020-03-20

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Arnaud Tournier ,  Boris Rodrigues Goncalves ,  Francois Roy

IPC: H01L31/107 ,  H01L27/146

Abstract: An electronic device is provided that includes a photodiode. The photodiode includes a semiconductor region coupled to a node of application of a first voltage, and at least one semiconductor wall. The at least one semiconductor wall extends along at least a height of the photodiode and partially surrounds the semiconductor region.

公开(公告)号：US11923465B2

公开(公告)日：2024-03-05

申请号：US17125654

申请日：2020-12-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Arnaud Tournier ,  Boris Rodrigues Goncalves ,  Frederic Lalanne

IPC: H01L31/02 ,  H01L27/146

CPC classification number: H01L31/02019 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L31/02005 ,  H01L27/14643

Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.

公开(公告)号：US11107938B2

公开(公告)日：2021-08-31

申请号：US16789997

申请日：2020-02-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Boris Rodrigues Goncalves ,  Arnaud Tournier

IPC: H01L31/0352 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0203

Abstract: A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.

公开(公告)号：US20190086519A1

公开(公告)日：2019-03-21

申请号：US16194985

申请日：2018-11-19

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Boris Rodrigues Goncalves ,  Marie Guillon ,  Yvon Cazaux ,  Benoit Giffard

IPC: G01S7/486 ,  H01L27/146 ,  G01S7/491 ,  H04N5/374

Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.