公开(公告)号：US20220169498A1

公开(公告)日：2022-06-02

申请号：US17534286

申请日：2021-11-23

Applicant: STMICROELECTRONICS S.R.L. ,  STMicroelectronics International N.V.

Inventor： Enri DUQI ,  Lorenzo BALDO ,  Paolo FERRARI ,  Benedetto Vigna ,  Flavio Francesco VILLA ,  Laura Maria CASTOLDI ,  Ilaria GELMI

IPC: B81B7/00

Abstract: A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.

公开(公告)号：US20240199415A1

公开(公告)日：2024-06-20

申请号：US18084811

申请日：2022-12-20

Applicant: STMicroelectronics International N.V.

Inventor： Federico VERCESI ,  Andrea NOMELLINI ,  Paolo FERRARI

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00285 ,  B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81B2207/07 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0178 ,  B81C2203/0118

Abstract: Disclosed herein is a process flow for forming a MEMS IMU including an accelerometer and a gyroscope each located in a separate sealed cavity maintained at a different pressure. Formation of the MEMS IMU includes the use of a first vHF release to etch a sacrificial layer underneath a structural layer containing the accelerometer and gyroscope and capping the device under formation to set both cavities at a first pressure. The floor of one of the cavities is formed to including a gas permeable layer. Formation further includes forming a chimney underneath the gas permeable layer and then performing a second vHF release to etch through the gas permeable layer and expose the cavity containing the gas permeable layer so that its pressure may be set to be different than that of the other cavity when the chimney is sealed.

公开(公告)号：US20250002332A1

公开(公告)日：2025-01-02

申请号：US18745739

申请日：2024-06-17

Applicant: STMicroelectronics International N.V.

Inventor： Giorgio ALLEGATO ,  Paolo FERRARI ,  Laura OGGIONI

IPC: B81B7/02 ,  B81C3/00 ,  G01C19/5783 ,  G01L9/00

Abstract: Described herein is a microelectromechanical sensor device, comprising: a stack of a first die that integrates a pressure-detection structure and a second die that integrates an inertial detection structure, the first die constituting a cap for the inertial detection structure and being bonded to the second die so as to define a hermetic cavity. The first die has a first substrate, having a front surface and a rear surface that is bonded to said second die, a buried cavity being buried and entirely contained in the first substrate and being arranged in a position corresponding to the front surface, from which it is separated by a membrane. In particular, the aforesaid buried cavity is distinct and separate from the hermetic cavity.