公开(公告)号：US20240425352A1

公开(公告)日：2024-12-26

申请号：US18741058

申请日：2024-06-12

Applicant: STMicroelectronics International N.V.

Inventor： Luca SEGHIZZI ,  Federico VERCESI ,  Gianluca LONGONI ,  Andrea NOMELLINI

IPC: B81B3/00 ,  G01P15/125

Abstract: An inertial MEMS device includes an inertial element provided by a movable structure that is responsive to movement. The moveable structure is formed in a first structural layer of semiconductor material. A suspended structure extends above the movable structure at a distance therefrom. The suspended structure is formed in a second structural layer of semiconductor material and carries a piezoelectric structure. The suspended structure and the piezoelectric structure form a wake-up element that generates an activation signal in presence of vibrations or shocks. The inertial element and the wake-up element are contained in a chamber formed by a substrate and a cap, together with peripheral portions of the first and the second structural layers.

公开(公告)号：US20240426652A1

公开(公告)日：2024-12-26

申请号：US18742355

申请日：2024-06-13

Applicant: STMicroelectronics International N.V.

Inventor： Gianluca LONGONI ,  Luca SEGHIZZI ,  Francesco BIANCHI ,  Federico VERCESI ,  Andrea NOMELLINI ,  Silvia NICOLI

IPC: G01H11/08 ,  G01P15/08 ,  H04R1/08 ,  H04R7/04 ,  H04R7/18 ,  H04R17/02 ,  H04R31/00

Abstract: A microelectromechanical sensor assembly includes a semiconductor die having a scaled cavity. A microelectromechanical inertial sensor has a sensing mass. A piezoelectric vibration sensor has a piezoelectric membrane. The sensing mass and the piezoelectric membrane are stacked one on top of the other and housed in the sealed cavity.

公开(公告)号：US20240315671A1

公开(公告)日：2024-09-26

申请号：US18123602

申请日：2023-03-20

Applicant: STMicroelectronics International N.V.

Inventor： Federico VERCESI ,  Giorgio ALLEGATO ,  Tarek AFIFI AFIFI ,  Sonia COSTANTINI

IPC: A61B8/00 ,  A61B8/08

CPC classification number: A61B8/4483 ,  A61B8/52

Abstract: A PMUT includes a substrate being doped and having a plurality of conductive vias formed therein, each conductive via formed of a portion of the substrate extending completely from a back side of the substrate to a front side of the substrate and being encircled by an isolating structure that electrically isolates that portion of the substrate from other portions of the substrate. An insulating layer stacked on the front side of the substrate and has through-holes therein over the plurality of conductive vias. An interconnection layer is stacked on the insulating layer and is connected to the plurality of conductive vias. A membrane carried is by the interconnection layer and underlying substrate, the membrane being shaped so as to delimit a chamber. A piezoelectric stack formed on the membrane over the chamber and vibrates the membrane in response to application of an alternating voltage to the piezoelectric stack.

公开(公告)号：US20240302219A1

公开(公告)日：2024-09-12

申请号：US18182058

申请日：2023-03-10

Applicant: STMicroelectronics International N.V.

Inventor： Federico VERCESI ,  Silvia NICOLI ,  Cinzia DE MARCO

IPC: G01K7/01 ,  H01L23/485 ,  H01L23/522

CPC classification number: G01K7/015 ,  H01L23/485 ,  H01L23/5226

Abstract: Disclosed herein are thermal sensor devices including TMOS devices with a mass suspended over a cavity by springs extending between a frame and the mass. The thermal sensor devices include stoppers that limit upward and/or downward movement of the springs and therefore the mass. These stoppers are formed from sidewalls supporting a top cap over the frame, springs, and mass. The stoppers are constructed by using various overlapping metal layers during fabrication. Details of forming the stoppers using these overlapping metal layers are contained here.

公开(公告)号：US20240199415A1

公开(公告)日：2024-06-20

申请号：US18084811

申请日：2022-12-20

Applicant: STMicroelectronics International N.V.

Inventor： Federico VERCESI ,  Andrea NOMELLINI ,  Paolo FERRARI

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00285 ,  B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81B2207/07 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0178 ,  B81C2203/0118

Abstract: Disclosed herein is a process flow for forming a MEMS IMU including an accelerometer and a gyroscope each located in a separate sealed cavity maintained at a different pressure. Formation of the MEMS IMU includes the use of a first vHF release to etch a sacrificial layer underneath a structural layer containing the accelerometer and gyroscope and capping the device under formation to set both cavities at a first pressure. The floor of one of the cavities is formed to including a gas permeable layer. Formation further includes forming a chimney underneath the gas permeable layer and then performing a second vHF release to etch through the gas permeable layer and expose the cavity containing the gas permeable layer so that its pressure may be set to be different than that of the other cavity when the chimney is sealed.