公开(公告)号：US20140167193A1

公开(公告)日：2014-06-19

申请号：US14104934

申请日：2013-12-12

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo Iuliano ,  Francesca Milanesi ,  Vincenzo Palumbo ,  Sonia Pirotta

IPC: H01L27/22 ,  H01L43/14

CPC classification number: H01L27/22 ,  G01R33/0052 ,  H01L27/0688 ,  H01L43/04 ,  H01L43/14

Abstract: A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.

Abstract translation: 一种半导体器件，包括：具有彼此相对的第一侧和第二侧的半导体本体; 第一屏障元件，其延伸在半导体本体的第一侧上，并且由构造成用作阻挡金属离子的第一材料制成，例如选自钛，钽，钛合金或化合物，钽合金; 磁性元件，其在第一阻挡层上延伸并且由具有磁性的第二材料制成，例如铁磁材料; 第二屏障元件，其在磁性层上延伸并由构成为用作阻挡金属离子的第三材料制成，例如选自钛，钽，钛合金或化合物，钽合金或化合物。 第一和第二屏障元件形成顶部封装结构和用于磁性元件的底部封装结构。

公开(公告)号：US09105568B2

公开(公告)日：2015-08-11

申请号：US14104934

申请日：2013-12-12

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo Iuliano ,  Francesca Milanesi ,  Vincenzo Palumbo ,  Sonia Pirotta

IPC: H01L27/22 ,  H01L43/14 ,  G01R33/00 ,  H01L43/04 ,  H01L27/06

CPC classification number: H01L27/22 ,  G01R33/0052 ,  H01L27/0688 ,  H01L43/04 ,  H01L43/14

Abstract: A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.

Abstract translation: 一种半导体器件，包括：具有彼此相对的第一侧和第二侧的半导体本体; 第一屏障元件，其延伸在半导体本体的第一侧上，并且由构造成用作阻挡金属离子的第一材料制成，例如选自钛，钽，钛合金或化合物，钽合金; 磁性元件，其在第一阻挡层上延伸并且由具有磁性的第二材料制成，例如铁磁材料; 第二屏障元件，其在磁性层上延伸并由构成为用作阻挡金属离子的第三材料制成，例如选自钛，钽，钛合金或化合物，钽合金或化合物。 第一和第二屏障元件形成顶部封装结构和用于磁性元件的底部封装结构。

公开(公告)号：US09401328B2

公开(公告)日：2016-07-26

申请号：US14865261

申请日：2015-09-25

Applicant: STMicroelectronics S.r.l.

Inventor： Andrea Paleari ,  Lorenzo Gola ,  Federica Ronchi ,  Sonia Pirotta

IPC: H01L23/52 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L21/288 ,  H01L21/285

CPC classification number: H01L23/53238 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/2885 ,  H01L21/76804 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electric contact structure includes a first structural layer; a second structural layer made of dielectric material extending over the first structural layer; and an intermediate layer made of conductive material extending between the first structural layer and the second structural layer. A trench extends in the second structural layer delimited laterally by a wall of the second structural layer and at the bottom by a surface region of the intermediate layer. A diffusion barrier extends in the trench covering the surface region of the intermediate layer and the wall of the second structural layer. The diffusion barrier is a TiW—TiN—TiW tri-layer.

Abstract translation: 电接触结构包括第一结构层; 由在第一结构层上延伸的介电材料制成的第二结构层; 以及在第一结构层和第二结构层之间延伸的由导电材料制成的中间层。 沟槽在第二结构层中延伸，第二结构层由第二结构层的壁横向限定，底部由中间层的表面区域延伸。 扩散屏障在覆盖中间层的表面区域和第二结构层的壁的沟槽中延伸。 扩散阻挡层是TiW-TiN-TiW三层。