公开(公告)号：US10469124B2

公开(公告)日：2019-11-05

申请号：US15968927

申请日：2018-05-02

Applicant: STMicroelectronics SA

Inventor： Laurent Chabert ,  Raphael Paulin

IPC: H04B1/48 ,  H04B1/16 ,  H04B1/18 ,  H03F3/195 ,  H03F1/26 ,  H03F1/52 ,  H03F3/72

Abstract: A communications device includes a transmission chain coupled to an antenna a receiver chain coupled to the antenna. The receiver chain includes an amplifier device having an input coupled to the antenna. A controlled switching circuit is included in the amplifier device and is operable to selectively disconnect conduction terminals of an amplifying transistor from power supply terminals when the transmission chain is operating to pass a transmit signal to the antenna.

公开(公告)号：US20180097481A1

公开(公告)日：2018-04-05

申请号：US15833039

申请日：2017-12-06

Applicant: STMicroelectronics SA

Inventor： Raphael Paulin

IPC: H03F1/56 ,  H04B5/00 ,  H03F3/195

CPC classification number: H03F1/565 ,  H03F1/086 ,  H03F1/223 ,  H03F3/195 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/294 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/321 ,  H03F2200/336 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/489 ,  H03F2200/492 ,  H03F2200/75 ,  H04B5/0081

Abstract: A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.

公开(公告)号：US09847349B1

公开(公告)日：2017-12-19

申请号：US15463493

申请日：2017-03-20

Applicant: STMicroelectronics SA

Inventor： Augustin Monroy Aguirre ,  Guillaume Bertrand ,  Philippe Cathelin ,  Raphael Paulin

IPC: H01L27/12 ,  H01L29/08 ,  H01L29/45 ,  H01L23/528 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L27/1203 ,  H01L23/528 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1079 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/78615

Abstract: An integrated electronic device is supported by a substrate of a silicon on insulator type. At least one transistor is formed in and on a semiconductor film of the substrate. The transistor includes a drain region and a source region of a first conductivity type and a substrate (body) region of a second conductivity type lying under a gate region. An extension region laterally continues the substrate (body) region beyond the source and drain regions and borders, in contact with, the source region through a border region having the first conductivity type. This supports formation of an electrical connection of the source region and the substrate (body) region.

公开(公告)号：US10243522B2

公开(公告)日：2019-03-26

申请号：US15833039

申请日：2017-12-06

Applicant: STMicroelectronics SA

Inventor： Raphael Paulin

IPC: H03F1/56 ,  H03F3/195 ,  H03F1/22 ,  H04B5/00 ,  H03F1/08

Abstract: A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.

公开(公告)号：US20170230014A1

公开(公告)日：2017-08-10

申请号：US15229464

申请日：2016-08-05

Applicant: STMicroelectronics SA

Inventor： Raphael Paulin

IPC: H03F1/56 ,  H04B5/00 ,  H03F3/195

CPC classification number: H03F1/565 ,  H03F1/086 ,  H03F1/223 ,  H03F3/195 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/294 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/321 ,  H03F2200/336 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/489 ,  H03F2200/492 ,  H03F2200/75 ,  H04B5/0081

Abstract: A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.