公开(公告)号：US09070597B2

公开(公告)日：2015-06-30

申请号：US14262769

申请日：2014-04-27

Applicant: Samsung Display Co., Ltd. ,  Kobe Steel, LTD.

Inventor： Byung-Du Ahn ,  Gun-Hee Kim ,  Jun-Hyung Lim ,  Toshihiro Kugimiya ,  Hiroshi Goto ,  Aya Miki ,  Shinya Morita

IPC: H01L29/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78693

Abstract: A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide.

Abstract translation: 薄膜晶体管包括栅电极，与栅电极重叠的沟道，与沟道接触的源电极以及与源电极间隔开并与沟道接触的漏电极。 该通道包括源自包括单相铟 - 锌 - 锡氧化物的源的铟 - 锌 - 锡氧化物。

公开(公告)号：US20150243793A1

公开(公告)日：2015-08-27

申请号：US14620907

申请日：2015-02-12

Applicant: Samsung Display Co., Ltd.

Inventor： Woong-Hee Jeong ,  Sun-Kwang Kim ,  Hyeon-Sik Kim ,  Byung-Du Ahn ,  Chaun-Gi Choi

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.

Abstract translation: 薄膜晶体管包括栅电极，栅极绝缘层，氧化物半导体层，氧化物缓冲层，保护层以及源极和漏极。 栅电极形成在基板上。 栅极绝缘层形成在基板上。 氧化物半导体层形成在栅极绝缘层上并且包括源极，沟道和漏极区。 氧化物缓冲层形成在氧化物半导体层上，其载流子浓度低于氧化物半导体层的载流子浓度。 保护层形成在氧化物缓冲层和栅极绝缘层上，并且在其中形成有接触孔，使得源极和漏极区域中的氧化物缓冲层暴露在其中。 源电极和漏电极通过接触孔与源区和漏区中的氧化物缓冲层耦合。

公开(公告)号：US20140098311A1

公开(公告)日：2014-04-10

申请号：US13734300

申请日：2013-01-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji-Hun Lim ,  Byung-Du Ahn ,  Je-Hun Lee

IPC: G02F1/1362 ,  G02F1/1333

CPC classification number: G02F1/136209 ,  G02F1/1333 ,  G02F2201/58 ,  G09G3/3648 ,  G09G2360/144

Abstract: A display substrate includes a substrate, a switching element, a pixel electrode, and a light sensing part. The switching element is disposed on the substrate and is electrically connected to a gate line and a data line. The pixel electrode is electrically connected to the switching element. The light sensing part is electrically connected to the switching element and the pixel electrode, and is configured to control a grayscale of a pixel according to a brightness of an external light. The pixel includes the pixel electrode.

Abstract translation: 显示基板包括基板，开关元件，像素电极和感光部。 开关元件设置在基板上并且电连接到栅极线和数据线。 像素电极电连接到开关元件。 光检测部电连接到开关元件和像素电极，并且被配置为根据外部光的亮度来控制像素的灰度。 像素包括像素电极。

公开(公告)号：US10014172B2

公开(公告)日：2018-07-03

申请号：US14478273

申请日：2014-09-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung-Du Ahn ,  Tae-Young Kim ,  Yeon-Gon Mo

IPC: H01L21/02 ,  G02F1/1368 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L21/02472 ,  G02F1/1368 ,  H01L21/02441 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: A thin film transistor including a gate electrode; an active layer insulated from the gate electrode; a source electrode and a drain electrode that are insulated from the gate electrode and are electrically connected to the active layer; a first etch stopper layer that is formed of an insulation material and contacts a portion of the active layer located between areas of the active layer that are electrically connected to the source electrode and the drain electrode; a second etch stopper layer on the first etch stopper layer, the second etch stopper layer being formed of an insulation material of a same type as the insulation material used to form the first etch stopper layer, the second etch stopper layer having a higher density than the first etch stopper layer; and a third etch stopper layer on the second etch stopper layer.

公开(公告)号：US09570624B2

公开(公告)日：2017-02-14

申请号：US14620907

申请日：2015-02-12

Applicant: Samsung Display Co., Ltd.

Inventor： Woong-Hee Jeong ,  Sun-Kwang Kim ,  Hyeon-Sik Kim ,  Byung-Du Ahn ,  Chaun-Gi Choi

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.

Abstract translation: 薄膜晶体管包括栅电极，栅极绝缘层，氧化物半导体层，氧化物缓冲层，保护层以及源极和漏极。 栅电极形成在基板上。 栅极绝缘层形成在基板上。 氧化物半导体层形成在栅极绝缘层上并且包括源极，沟道和漏极区。 氧化物缓冲层形成在氧化物半导体层上，其载流子浓度低于氧化物半导体层的载流子浓度。 保护层形成在氧化物缓冲层和栅极绝缘层上，并且在其中形成有接触孔，使得源极和漏极区域中的氧化物缓冲层暴露在其中。 源电极和漏电极通过接触孔与源区和漏区中的氧化物缓冲层耦合。

公开(公告)号：US09091894B2

公开(公告)日：2015-07-28

申请号：US13734300

申请日：2013-01-04

Applicant: Samsung Display Co., Ltd.

Inventor： Ji-Hun Lim ,  Byung-Du Ahn ,  Je-Hun Lee

IPC: G02F1/133 ,  G02F1/1362 ,  G02F1/1333 ,  G09G3/36

CPC classification number: G02F1/136209 ,  G02F1/1333 ,  G02F2201/58 ,  G09G3/3648 ,  G09G2360/144

Abstract: A display substrate includes a substrate, a switching element, a pixel electrode, and a light sensing part. The switching element is disposed on the substrate and is electrically connected to a gate line and a data line. The pixel electrode is electrically connected to the switching element. The light sensing part is electrically connected to the switching element and the pixel electrode, and is configured to control a grayscale of a pixel according to a brightness of an external light. The pixel includes the pixel electrode.

Abstract translation: 显示基板包括基板，开关元件，像素电极和感光部。 开关元件设置在基板上并且电连接到栅极线和数据线。 像素电极电连接到开关元件。 光检测部电连接到开关元件和像素电极，并且被配置为根据外部光的亮度来控制像素的灰度。 像素包括像素电极。

公开(公告)号：US09685122B2

公开(公告)日：2017-06-20

申请号：US14548124

申请日：2014-11-19

Applicant: Samsung Display Co., Ltd.

Inventor： Ji-Hun Lim ,  Hyeon-Sik Kim ,  Yeon-Gon Mo ,  Byung-Du Ahn ,  Hyang-Shik Kong

IPC: G09G3/36 ,  G09G3/02 ,  H01L27/144 ,  H01L27/12 ,  H01L29/786 ,  G06F3/041 ,  G06F3/042

CPC classification number: G09G3/3607 ,  G06F3/0412 ,  G06F3/042 ,  G09G3/02 ,  G09G3/3648 ,  G09G2300/0809 ,  G09G2360/141 ,  G09G2360/142 ,  G09G2360/144 ,  G09G2360/145 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1446 ,  H01L29/7869

Abstract: A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.

公开(公告)号：US09660089B2

公开(公告)日：2017-05-23

申请号：US14467848

申请日：2014-08-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung-Du Ahn ,  Ji-Hun Lim ,  Jin-Hyun Park ,  Hyun-Jae Kim

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78633 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.

公开(公告)号：US09502246B2

公开(公告)日：2016-11-22

申请号：US14455805

申请日：2014-08-08

Applicant: Samsung Display Co., Ltd. ,  University-Industry Foundation (UIF), Yonsei University

Inventor： Yeon-Hong Kim ,  Byung-Du Ahn ,  Hyeon-Sik Kim ,  Yeon-Gon Mo ,  Ji-Hun Lim ,  Hyun-Jae Kim

IPC: H01L21/02

CPC classification number: H01L21/02664 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L2227/323

Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.

Abstract translation: 可以提供形成氧化物半导体器件的方法。 在该方法中，可以提供包括第一主表面和远离第一主表面的第二主表面的基板。 可以在第一主表面上形成氧化物半导体器件以提供中间器件，并且半导体器件可以包括氧化物有源层。 中间装置可以经受第一阶段的紫外线（UV）光（例如紫外线照射处理），并进行第二时段的加热（例如热处理）。 第一和第二周期可以至少部分重叠。