DISPLAY APPARATUS
    2.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20230217713A1

    公开(公告)日:2023-07-06

    申请号:US17981263

    申请日:2022-11-04

    CPC classification number: H01L27/3265 H01L27/3262 H01L27/3276 H01L27/1225

    Abstract: A display apparatus includes: a transistor; a storage capacitor connected to the transistor; and a light-emitting diode electrically connected to the transistor and the storage capacitor, wherein the transistor includes: a gate electrode on a substrate and having a first sub-layer and a second sub-layer on the first sub-layer; and a semiconductor layer having a channel area, a first low-resistance area, and a second low-resistance area, wherein the channel area overlaps the gate electrode, and the first and second low-resistance areas are on both sides of the channel area, a width of the first sub-layer is greater than a width of the second sub-layer, the channel area is arranged along a side surface of the second sub-layer, the storage capacitor includes a first capacitor electrode and a second capacitor electrode, and the first capacitor electrode is on a same layer and includes a same material as the gate electrode.

    Display device including pad arranged in peripheral area

    公开(公告)号:US11302771B2

    公开(公告)日:2022-04-12

    申请号:US16886876

    申请日:2020-05-29

    Abstract: A display device includes a substrate including a display area and a peripheral area outside the display area, a thin-film transistor arranged in the display area, a display element arranged in the display area, an interlayer insulating layer covering the thin-film transistor, a conductive layer arranged above the interlayer insulating layer, a first insulating layer covering the conductive layer, a pad arranged in the peripheral area, and a second conductive layer covering a central portion of the pad. The pad is connected to a connection line through a contact hole, and the connection line is arranged on a same first layer as a gate electrode of the thin-film transistor. A side surface of the pad is covered by the first insulating layer or the second conductive layer.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220181427A1

    公开(公告)日:2022-06-09

    申请号:US17447046

    申请日:2021-09-07

    Abstract: A display apparatus includes: a substrate including a display area, and a peripheral area; and a pad unit at the peripheral area, the pad unit including: a first conductive layer; a second conductive layer on the first conductive layer, and having a first opening; a third conductive layer on the second conductive layer, and having a second opening overlapping with the first opening, the second opening having an area less than an area of the first opening at a top surface of the second conductive layer; an organic protective layer filling the first opening, and having a third opening overlapping with the second opening; and an additional metal layer covering a top surface of the first conductive layer exposed through the first opening, an inner surface of the second opening, an inner surface of the third opening, and a portion of a top surface of the third conductive layer.

    Thin film transistor including a vertical channel and display apparatus using the same

    公开(公告)号:US10396140B2

    公开(公告)日:2019-08-27

    申请号:US15427111

    申请日:2017-02-08

    Abstract: A thin film transistor includes a substrate and a gate electrode disposed over the substrate. The gate electrode includes a center part and a peripheral part configured to at least partially surround the center part. The thin film transistor further includes a gate insulating layer disposed below the gate electrode and a first electrode insulated from the gate electrode by the gate insulating layer. The first electrode has at least a portion thereof overlapping the center part. The thin film transistor additionally includes a spacer disposed below the first electrode and a second electrode insulated from the first electrode by the spacer. The second electrode has at least a portion thereof overlapping the peripheral part. The thin film transistor further includes a semiconductor layer connected to the first and second electrodes, and insulated from the gate electrode by the gate insulating layer.

    Display apparatus
    9.
    发明授权

    公开(公告)号:US11978841B2

    公开(公告)日:2024-05-07

    申请号:US17449414

    申请日:2021-09-29

    CPC classification number: H01L33/62 H01L27/156 H01L33/38

    Abstract: A display apparatus includes a display area including pixels on a substrate, a pad portion on the substrate in a non-display area outside the display area, and including a conductive line, a first dummy line around the conductive line, and a first anti-fuse and a second anti-fuse adjacent to the conductive line and spaced apart from each other in a lengthwise direction of the conductive line, the first anti-fuse and the second anti-fuse each including a first electrode electrically connected to a portion of the conductive line, and a second electrode over the first electrode with a first insulating layer therebetween, and electrically connected to a portion of the first dummy line, and a circuit portion overlapping, and electrically connected to, the pad portion.

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