Image sensor
    1.
    发明授权

    公开(公告)号:US11411052B2

    公开(公告)日:2022-08-09

    申请号:US17122070

    申请日:2020-12-15

    Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

    Optical Biosensor
    2.
    发明申请
    Optical Biosensor 审中-公开
    光学生物传感器

    公开(公告)号:US20130259747A1

    公开(公告)日:2013-10-03

    申请号:US13754347

    申请日:2013-01-30

    CPC classification number: G01N21/84 G01N21/7746

    Abstract: An optical biosensor includes a sensing block that receives a first optical signal and outputs a second optical signal through at least one channel of a plurality of channels that correspond to a sensed concentration of a biomaterial; and a detecting block that detects the second optical signal, converts the second optical signal into an electrical signal, and outputs the electrical signal.

    Abstract translation: 光学生物传感器包括:感测块,其接收第一光信号并通过对应于生物材料的感测浓度的多个通道中的至少一个通道输出第二光信号; 以及检测块,其检测第二光信号,将第二光信号转换为电信号,并输出电信号。

    Image sensor
    4.
    发明授权

    公开(公告)号:US10916587B2

    公开(公告)日:2021-02-09

    申请号:US16443233

    申请日:2019-06-17

    Abstract: An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.

    IMAGE SENSOR
    6.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20200075650A1

    公开(公告)日:2020-03-05

    申请号:US16402423

    申请日:2019-05-03

    Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

    IMAGE SENSOR
    8.
    发明申请

    公开(公告)号:US20210104577A1

    公开(公告)日:2021-04-08

    申请号:US17122070

    申请日:2020-12-15

    Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

    Image sensor
    10.
    发明授权

    公开(公告)号:US11011562B2

    公开(公告)日:2021-05-18

    申请号:US16402423

    申请日:2019-05-03

    Abstract: An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

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