公开(公告)号：US20180096935A1

公开(公告)日：2018-04-05

申请号：US15497283

申请日：2017-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jin KIM ,  Chang-Hwa KIM ,  Hwi-Chan JUN ,  Chul-Hong PARK ,  Jae-Seok YANG ,  Kwan-Young CHUN

IPC: H01L23/535 ,  H01L21/768 ,  H01L29/06 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L23/535 ,  H01L21/76895 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/845 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/785

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.

公开(公告)号：US20210098377A1

公开(公告)日：2021-04-01

申请号：US17120616

申请日：2020-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jin KIM ,  Chang-Hwa KIM ,  Hwi-Chan JUN ,  Chul-Hong PARK ,  Jae-Seok YANG ,  Kwan-Young CHUN

IPC: H01L23/535 ,  H01L27/088 ,  H01L21/84 ,  H01L27/12 ,  H01L21/768 ,  H01L29/08 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.

公开(公告)号：US20190157336A1

公开(公告)日：2019-05-23

申请号：US16171841

申请日：2018-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Hun KIM ,  Sang-Su PARK ,  Chang-Hwa KIM ,  Hyung-Yong KIM ,  Beom-Suk LEE ,  Man-Geun CHO ,  Jae-Sung HUR

IPC: H01L27/146 ,  G02B27/10 ,  G02B27/09 ,  H01L25/16

Abstract: An image sensor includes a plurality of photo diodes disposed at a semiconductor substrate, and a splitter disposed on the photo diodes. The splitter splits an incident light depending on a wavelength so that split light of different colors enters different photo diodes, respectively. The splitter includes a first pattern structure having a cross-sectional structure in which a plurality of refractive layer patterns are deposited in a lateral direction.

公开(公告)号：US20190122988A1

公开(公告)日：2019-04-25

申请号：US16217220

申请日：2018-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jin KIM ,  Chang-Hwa KIM ,  Hwi-Chan JUN ,  Chul-Hong PARK ,  Jae-Seok YANG ,  Kwan-Young CHUN

IPC: H01L23/535 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66 ,  H01L29/417 ,  H01L21/768 ,  H01L27/12 ,  H01L21/84 ,  H01L29/78

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.

公开(公告)号：US20170033048A1

公开(公告)日：2017-02-02

申请号：US15165016

申请日：2016-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Hwa KIM ,  Joon-Gon LEE ,  Inchan HWANG

IPC: H01L23/535 ,  H01L29/66 ,  H01L23/532 ,  H01L21/768 ,  H01L29/78 ,  H01L23/528

CPC classification number: H01L29/66636 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate with lower structures, an insulation layer covering the lower structures on the substrate, a contact hole through the insulation layer partially exposing the substrate, and a contact structure contacting the substrate through the contact hole, the contact structure including a barrier pattern having an upper barrier on an upper portion of a sidewall of the contact hole, and a lower barrier filling a lower portion of the contact hole, and a conductive contact pattern filling an upper portion of the contact hole defined by the upper barrier and the lower barrier.

Abstract translation: 半导体器件包括具有下结构的衬底，覆盖衬底上的下结构的绝缘层，通过绝缘层的部分暴露衬底的接触孔以及通过接触孔接触衬底的接触结构，接触结构包括 在接触孔的侧壁的上部具有上阻挡层的阻挡图案和填充接触孔的下部的下阻挡层以及填充由上阻挡层限定的接触孔的上部的导电接触图案，以及 较低的屏障。