公开(公告)号：US20140264052A1

公开(公告)日：2014-09-18

申请号：US14197608

申请日：2014-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woong-Kyu SON ,  Kwang-Hoon KIM ,  Deok-Yong KIM ,  Sung-Soo MOON ,  Jung-Hoon BYUN ,  Ji-Hye LEE ,  Choon-Shik LEEM ,  Soo-Bok CHIN

IPC: G01N21/33 ,  G01N21/21

CPC classification number: H01L22/12 ,  G01N21/21 ,  G01N21/33 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8848 ,  G03F7/70625

Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

Abstract translation: 本发明的概念提供了使用偏振光来实时监控半导体制造工艺的装置和方法。 在一些实施例中，该装置包括被配置为产生光的光源，被配置为将光朝向正被处理的晶片反射的分束器，物镜偏振器，被配置为使朝向晶片反射的光偏振，并允许由晶片反射的光 通过其配置成根据波长分离由晶片反射的光的火焰光栅，被配置为检测分离的光的阵列检测器和分析器，以分析在晶片中形成的结构/图案的三维轮廓。

公开(公告)号：US20140342477A1

公开(公告)日：2014-11-20

申请号：US14196184

申请日：2014-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choon-Shik LEEM ,  Deok-Yong KIM ,  Sang-Ho SONG ,  Chul-Gi SONG ,  Ho-Yeol LEE ,  Soo-Bok CHIN

IPC: H01L21/66

CPC classification number: H01L22/12

Abstract: A method of monitoring a semiconductor fabrication process including forming a barrier pattern on a substrate, forming a sacrificial pattern on the barrier pattern, removing the sacrificial pattern to expose a surface of the barrier pattern, generating photoelectrons by irradiating X-rays to a surface of the substrate, and inferring at least one material existing on the surface of the substrate by collecting and analyzing the photoelectrons may be provided.

Abstract translation: 一种监测半导体制造工艺的方法，包括在衬底上形成阻挡图案，在阻挡图案上形成牺牲图案，去除牺牲图案以暴露阻挡图案的表面，通过将X射线照射到 可以提供基板，并且通过收集和分析光电子来推断存在于基板的表面上的至少一种材料。

公开(公告)号：US20170115233A1

公开(公告)日：2017-04-27

申请号：US15183003

申请日：2016-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choon-Shik LEEM ,  Woo-Jin JUNG ,  Chung-Sam JUN

IPC: G01N21/88 ,  G01N21/95 ,  H01L21/67

CPC classification number: G01N21/8851 ,  G01N21/9501 ,  G01N2021/8861 ,  G01N2021/8887 ,  H01L21/67288

Abstract: A wafer inspection apparatus including a derivation unit configured to derive a first polar coordinate set and a second polar coordinate set using a latin hypercube sampling, the first and second polar coordinate sets not overlapping each other, an inspection unit configured to perform defect inspections of a plurality of wafers using the first and second polar coordinate sets, a support unit configured to support the wafers, and an calculation unit configured to combine a defect inspection result using the first polar coordinate set with a defect inspection result using the second polar coordinate set may be provided.

公开(公告)号：US20150219446A1

公开(公告)日：2015-08-06

申请号：US14614646

申请日：2015-02-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Choon-Shik LEEM ,  Woo-Jin Jung ,  Ji-Hye Lee ,  Deok-Yong Kim ,  Chul-Gi Song ,  Soo-Bok Chin

IPC: G01B11/24 ,  G01N21/21

CPC classification number: G01B11/24 ,  G01B2210/56 ,  G01N2021/213 ,  G03F7/70625 ,  H01L22/12

Abstract: Methods and apparatuses for measuring parameters of integrated circuit devices may be provided. The methods may include performing detecting operations on samples to obtain a set of data. Each detecting operation may include irradiating a light beam to the samples using a light irradiation part and detecting reflected light from the samples using a light detector. The samples may have values of a parameter different from one another. The method may also include obtaining a principal component based on the set of data and obtaining a regression model for the parameter using the principal component and values of the parameter of the samples.

Abstract translation: 可以提供用于测量集成电路装置的参数的方法和装置。 这些方法可以包括对样本执行检测操作以获得一组数据。 每个检测操作可以包括使用光照射部分将光束照射到样品上，并使用光检测器检测来自样品的反射光。 样本可以具有彼此不同的参数的值。 该方法还可以包括基于该组数据获得主成分，并使用主要分量和样本参数的值获得参数的回归模型。