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公开(公告)号：US20200176575A1
公开(公告)日：2020-06-04
申请号：US16695675
申请日：2019-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Heon Bok Lee , Dae Yong Kim , Wan Don Kim , Jeong Hyuk Yim , Won Keun Chung , Hyo Seok Choi , Sang Jin Hyun
IPC: H01L29/417 , H01L29/66 , H01L29/78 , H01L21/768 , H01L29/08
Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.
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公开(公告)号：US10557198B2
公开(公告)日：2020-02-11
申请号：US16190558
申请日：2018-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Heon Bok Lee , Dae Yong Kim , Dong Woo Kim , Jun Ki Park , Sang Yub Ie , Sang Jin Hyun
IPC: H01L21/285 , C23C16/455
Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.
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公开(公告)号：US12087833B2
公开(公告)日：2024-09-10
申请号：US18380754
申请日：2023-10-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Heon Bok Lee , Dae Yong Kim , Wan Don Kim , Jeong Hyuk Yim , Won Keun Chung , Hyo Seok Choi , Sang Jin Hyun
IPC: H01L29/417 , H01L21/768 , H01L29/08 , H01L29/66 , H01L29/78
CPC classification number: H01L29/41775 , H01L21/76897 , H01L29/0847 , H01L29/41791 , H01L29/6681 , H01L29/7851
Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.
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公开(公告)号：US11799004B2
公开(公告)日：2023-10-24
申请号：US17694759
申请日：2022-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Heon Bok Lee , Dae Yong Kim , Wan Don Kim , Jeong Hyuk Yim , Won Keun Chung , Hyo Seok Choi , Sang Jin Hyun
IPC: H01L29/417 , H01L29/66 , H01L29/08 , H01L21/768 , H01L29/78
CPC classification number: H01L29/41775 , H01L21/76897 , H01L29/0847 , H01L29/41791 , H01L29/6681 , H01L29/7851
Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.
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Patent Agency Ranking
公开(公告)号：US10714945B2
公开(公告)日：2020-07-14
申请号：US16168017
申请日：2018-10-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hwang Kong , Sun Kyu Lee , Sung Yong Lee , Dae Yong Kim , Sang Ho Kim
Abstract: A charge control circuit includes: a charge current control circuit configured to receive an input voltage at a first node, output a sensing current to a second node, and turn on a power transistor; a comparator configured to compare a voltage level of the second node with a voltage level of a third node, wherein the third node receives a charging current from the power transistor; a current mirror configured to generate a mirror current corresponding to the sensing current; and an amplifier configured to receive a first feedback voltage based on the mirror current, and amplify a difference between the first feedback voltage and a reference voltage to generate a switch control signal, wherein in response to the switch control signal and a plurality of control signals, the charge current control circuit is configured to decrease the sensing current and turn on the power transistor.
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公开(公告)号：US10110032B2
公开(公告)日：2018-10-23
申请号：US15096687
申请日：2016-04-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hwang Kong , Sun Kyu Lee , Sung Yong Lee , Dae Yong Kim , Sang Ho Kim
Abstract: A charge control circuit includes: a charge current control circuit configured to receive an input voltage at a first node, output a sensing current to a second node, and turn on a power transistor; a comparator configured to compare a voltage level of the second node with a voltage level of a third node, wherein the third node receives a charging current from the power transistor; a current mirror configured to generate a mirror current corresponding to the sensing current; and an amplifier configured to receive a first feedback voltage based on the mirror current, and amplify a difference between the first feedback voltage and a reference voltage to generate a switch control signal, wherein in response to the switch control signal and a plurality of control signals, the charge current control circuit is configured to decrease the sensing current and turn on the power transistor.
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公开(公告)号：US11296196B2
公开(公告)日：2022-04-05
申请号：US16695675
申请日：2019-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Heon Bok Lee , Dae Yong Kim , Wan Don Kim , Jeong Hyuk Yim , Won Keun Chung , Hyo Seok Choi , Sang Jin Hyun
IPC: H01L29/417 , H01L29/66 , H01L29/08 , H01L21/768 , H01L29/78
Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.
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公开(公告)号：US20190292664A1
公开(公告)日：2019-09-26
申请号：US16190558
申请日：2018-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Heon Bok Lee , Dae Yong Kim , Dong Woo Kim , Jun Ki Park , Sang Yub Ie , Sang Jin Hyun
IPC: C23C16/455 , H01L21/285
Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.
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公开(公告)号：US09933799B2
公开(公告)日：2018-04-03
申请号：US15271680
申请日：2016-09-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jun Hyeok Yang , Dae Yong Kim , Sang Ho Kim , Jae Jin Park
IPC: G05F1/575
CPC classification number: G05F1/575
Abstract: A voltage regulator includes an error amplifier configured to receive a first voltage through a first node as an operating voltage, to amplify a difference between a reference voltage and a feedback voltage, and to output an amplified voltage; a power transistor connected between a second node through which a second voltage is supplied and an output node of the voltage regulator; and a switch circuit configured to select a level of a gate voltage supplied to a gate of the power transistor and level of a body voltage supplied to a body of the power transistor in response to a first power sequence of the first voltage, a second power sequence of the second voltage, and an operation control signal.
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