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公开(公告)号：US11785767B2
公开(公告)日：2023-10-10
申请号：US17159727
申请日：2021-01-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngwoo Kim , Dawoon Jeong , Tak Lee , Jungmin Lee
Abstract: A semiconductor device includes a substrate having a first region and a second region, insulating patterns in the substrate in the second region that define active patterns of the substrate, gate electrodes spaced apart from each other and stacked on an upper surface of the substrate and extending in a first direction, first separation regions extending in the first direction and in contact with the active patterns, second separation regions extending between the first separation regions in the first direction, and channel structures penetrating through the gate electrodes in the first region. At least one of the second separation regions is in contact with the substrate below the insulating patterns.
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公开(公告)号：US20240079323A1
公开(公告)日：2024-03-07
申请号：US18350999
申请日：2023-07-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joonyoung Kwon , Dawoon Jeong , Jiyoung Kim , Sukkang Sung , Woosung Yang
IPC: H01L23/528 , G11C5/06 , H01L25/065 , H10B41/27 , H10B41/35 , H10B41/40 , H10B43/27 , H10B43/35 , H10B43/40 , H10B80/00
CPC classification number: H01L23/5283 , G11C5/063 , H01L25/0655 , H10B41/27 , H10B41/35 , H10B41/40 , H10B43/27 , H10B43/35 , H10B43/40 , H10B80/00
Abstract: A semiconductor device includes a first conductive plate structure and a second conductive plate structure, arranged at a same vertical level on a semiconductor chip and horizontally spaced apart from each other on the semiconductor chip, a first structure on the first conductive plate structure and including first separation structures and first memory blocks, and a second structure on the second conductive plate structure and including second separation structures and second memory blocks. The first memory blocks are spaced apart from each other by the first separation structures, and extend in parallel to each other in a first horizontal direction. The second memory blocks are spaced apart from each other by the second separation structures, and extend in parallel to each other in a second horizontal direction. The first and second horizontal directions are parallel to an upper surface of the first conductive plate structure, and are perpendicular to each other.
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Patent Agency Ranking
公开(公告)号：US11744078B2
公开(公告)日：2023-08-29
申请号：US17085715
申请日：2020-10-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dawoon Jeong , Youngwoo Kim , Jaesung Kim , Hyoungryeol In
Abstract: A semiconductor device includes a substrate having a first region and a second region, gate electrodes stacked and spaced apart from each other in a first direction, perpendicular to an upper surface of the substrate in the first region and extending in different lengths along a second direction, perpendicular to the first direction in the second region, first separation regions penetrating the gate electrodes in the first and second regions, extending in the second direction, and spaced apart from each other in a third direction, perpendicular to the first and second directions, second separation regions penetrating the gate electrodes in the second region and spaced apart from each other in the second direction between the separation regions, and a first vertical structure penetrating the gate electrodes in the second region and closest to the first region, wherein a width of the second separation regions in the third direction is greater than a width of the first vertical structure, a first end point of the second separation regions adjacent to the first region is spaced apart from a central axis of the first dummy structure in the second direction, away from the first region.
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公开(公告)号：US20210391346A1
公开(公告)日：2021-12-16
申请号：US17159727
申请日：2021-01-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngwoo Kim , Dawoon Jeong , Tak Lee , Jungmin Lee
IPC: H01L27/11556 , H01L27/11582 , H01L27/11519 , H01L27/11565
Abstract: A semiconductor device includes a substrate having a first region and a second region, insulating patterns in the substrate in the second region that define active patterns of the substrate, gate electrodes spaced apart from each other and stacked on an upper surface of the substrate and extending in a first direction, first separation regions extending in the first direction and in contact with the active patterns, second separation regions extending between the first separation regions in the first direction, and channel structures penetrating through the gate electrodes in the first region. At least one of the second separation regions is in contact with the substrate below the insulating patterns.
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公开(公告)号：US12114497B2
公开(公告)日：2024-10-08
申请号：US18464668
申请日：2023-09-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngwoo Kim , Dawoon Jeong , Tak Lee , Jungmin Lee
Abstract: A semiconductor device includes a substrate having a first region and a second region, insulating patterns in the substrate in the second region that define active patterns of the substrate, gate electrodes spaced apart from each other and stacked on an upper surface of the substrate and extending in a first direction, first separation regions extending in the first direction and in contact with the active patterns, second separation regions extending between the first separation regions in the first direction, and channel structures penetrating through the gate electrodes in the first region. At least one of the second separation regions is in contact with the substrate below the insulating patterns.
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公开(公告)号：US12101937B2
公开(公告)日：2024-09-24
申请号：US18358993
申请日：2023-07-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dawoon Jeong , Youngwoo Kim , Jaesung Kim , Hyoungryeol In
Abstract: A semiconductor device includes a substrate having a first region and a second region, gate electrodes stacked and spaced apart from each other in a first direction, perpendicular to an upper surface of the substrate in the first region and extending in different lengths along a second direction, perpendicular to the first direction in the second region, first separation regions penetrating the gate electrodes in the first and second regions, extending in the second direction, and spaced apart from each other in a third direction, perpendicular to the first and second directions, second separation regions penetrating the gate electrodes in the second region and spaced apart from each other in the second direction between the separation regions, and a first vertical structure penetrating the gate electrodes in the second region and closest to the first region, wherein a width of the second separation regions in the third direction is greater than a width of the first vertical structure, a first end point of the second separation regions adjacent to the first region is spaced apart from a central axis of the first dummy structure in the second direction, away from the first region.
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公开(公告)号：US20230422497A1
公开(公告)日：2023-12-28
申请号：US18464668
申请日：2023-09-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngwoo Kim , Dawoon Jeong , Tak Lee , Jungmin Lee
Abstract: A semiconductor device includes a substrate having a first region and a second region, insulating patterns in the substrate in the second region that define active patterns of the substrate, gate electrodes spaced apart from each other and stacked on an upper surface of the substrate and extending in a first direction, first separation regions extending in the first direction and in contact with the active patterns, second separation regions extending between the first separation regions in the first direction, and channel structures penetrating through the gate electrodes in the first region. At least one of the second separation regions is in contact with the substrate below the insulating patterns.
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