公开(公告)号：US11092787B2

公开(公告)日：2021-08-17

申请号：US15839026

申请日：2017-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-woo Kim ,  Tae-kun Lee

IPC: G02B15/14 ,  G02B27/00 ,  G02B13/00 ,  G02B13/06 ,  G02B13/02 ,  G02B13/04 ,  G02B13/18

Abstract: Provided are an optical lens assembly and an electronic apparatus including the optical lens assembly. The optical lens assembly includes a first lens group having positive refractive power, a stop, and a second lens group having positive refractive power that are arranged from an object side to an image side. The first lens group includes a first lens having negative refractive power and a meniscus shape convex toward the object side, a second lens having negative refractive power, and at least one other lens. The second lens group includes at least three lenses, and a lens of the second lens group closest to the image side has at least one inflection point.

公开(公告)号：US20200127759A1

公开(公告)日：2020-04-23

申请号：US16655567

申请日：2019-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： KWON-YEOL PARK ,  Dong-woo Kim ,  Jong-han Kim ,  Joon-sang Ryu ,  Sang-hyun Lee

IPC: H04L1/00 ,  H04L5/14 ,  H04W12/00

Abstract: A wireless communication with modulation and demodulation set based on channel information is disclosed. An operating method of a first wireless communication device includes: transmitting a pilot signal via a wireless channel to a second wireless communication device; receiving channel state information, estimated by and transmitted from the second wireless communication device in response to the pilot signal, the channel state information including amplitude information and phase information of a wireless channel; setting a modulation method for data transmission based on the amplitude information and the phase information of the wireless channel; generating modulated data based on the modulation method; and transmitting the modulated data via the wireless channel.

公开(公告)号：US09851583B2

公开(公告)日：2017-12-26

申请号：US15072660

申请日：2016-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-woo Kim

IPC: G02B27/64 ,  G02B13/04 ,  G02B9/34

CPC classification number: G02B27/646 ,  G02B9/34 ,  G02B13/04

Abstract: A single focus lens including: a first lens group having a negative refractive power; a second lens group having a positive refractive power, the second lens group being arranged to move in a direction that is transverse to an optical axis of the single focus lens; a third lens group having a negative refractive power that is arranged to perform a focusing function; and a rear lens group disposed between the third lens group and an image side of the single focus lens, wherein the first lens group, the second lens group, the third lens group, and the rear lens group are ordered sequentially from an object side of the single focus lens to the image side of the single focus lens.

公开(公告)号：US10819463B2

公开(公告)日：2020-10-27

申请号：US16655567

申请日：2019-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwon-yeol Park ,  Dong-woo Kim ,  Jong-han Kim ,  Joon-sang Ryu ,  Sang-hyun Lee

IPC: H04L1/00 ,  H04W12/00 ,  H04L5/14

Abstract: A wireless communication with modulation and demodulation set based on channel information is disclosed. An operating method of a first wireless communication device includes: transmitting a pilot signal via a wireless channel to a second wireless communication device; receiving channel state information, estimated by and transmitted from the second wireless communication device in response to the pilot signal, the channel state information including amplitude information and phase information of a wireless channel; setting a modulation method for data transmission based on the amplitude information and the phase information of the wireless channel; generating modulated data based on the modulation method; and transmitting the modulated data via the wireless channel.

公开(公告)号：US10067319B2

公开(公告)日：2018-09-04

申请号：US15371509

申请日：2016-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-woo Kim ,  Shuji Yoneyama

IPC: G02B3/02 ,  G02B15/14 ,  G02B13/02 ,  G02B9/14 ,  G02B13/00 ,  G02B9/18 ,  G02B5/00 ,  G02B27/64 ,  G02B27/00

Abstract: A single focus lens and a photographing apparatus including the single focus lens are provided. The photographing apparatus includes a single focus lens comprising: a first lens group having a positive refractive power, the first lens group including a first negative lens and a second negative lens arranged in succession at a most object side of the first lens group; a second lens group having a negative refractive power; and a third lens group having a positive refractive power and including a positive lens and a negative lens. The first to third lens groups are sequentially arranged in a direction from an object side to an image side.

公开(公告)号：US09972701B2

公开(公告)日：2018-05-15

申请号：US15443160

申请日：2017-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-woo Kim ,  Hyun-jung Lee ,  Sun-jung Kim ,  Seung-hun Lee ,  Keum-seok Park ,  Edward Namkyu Cho

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/417 ,  H01L29/51 ,  H01L29/775 ,  H01L29/10

CPC classification number: H01L29/66742 ,  B82Y10/00 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/1037 ,  H01L29/1079 ,  H01L29/41725 ,  H01L29/42392 ,  H01L29/515 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78618 ,  H01L29/78696

Abstract: A semiconductor device includes a fin-type active area, nanosheets, a gate, a source/drain region, and insulating spacers. The fin-type active area protrudes from a substrate in a first direction. The nanosheets are spaced from an upper surface of the fin-type active area and include channel regions. The gate is over the fin-type active area. The source/drain region is connected to the nanosheets. The insulating spacers are in the fin-type active area and between the nanosheets. Air spaces are between the insulating spacers and the source/drain region based on positions of the insulating spacers.

公开(公告)号：US11037926B2

公开(公告)日：2021-06-15

申请号：US17014254

申请日：2020-09-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-chan Suh ,  Gi-gwan Park ,  Dong-woo Kim ,  Dong-suk Shin

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/66 ,  H01L29/04 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes a substrate including a first region and a second region, fin type active areas extending in a first direction away from the substrate in each of the first and second regions, a plurality of nanosheets extending parallel to an upper surface of the fin type active areas and being spaced apart from the upper surface of the fin type active areas, a gate extending over the fin type active areas in a second direction crossing the first direction, a gate dielectric layer interposed between the gate and each of the nanosheets, first source and drain regions included in the first region and second source and drain regions included in the second region, and insulating spacers interposed between the fin type active areas and the nanosheets, wherein air spacers are interposed between the insulating spacers and the first source and drain regions.

公开(公告)号：US10820168B2

公开(公告)日：2020-10-27

申请号：US16239687

申请日：2019-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-ok Cha ,  Dong-woo Kim ,  Young-ri Kim ,  Ji-yeon Yoo ,  Ju-youn Lee

IPC: H04W4/21 ,  H04W4/029 ,  H04W4/021 ,  H04M1/725 ,  H04L29/08

Abstract: A mobile communication terminal and a method of recommending an application or content by providing information regarding a terminal status obtained by the mobile communication terminal when a connection device is connected to the mobile communication terminal without having to look for the application or content. The mobile communication terminal includes a connection status determining unit which determines a connection status of a connection device and the mobile communication terminal, a terminal status storage unit which stores information regarding a terminal status of the mobile communication terminal; and a recommended target executing unit which determines a recommended application based on the connection status and the information regarding the terminal status of the mobile communication terminal.

公开(公告)号：US10790361B2

公开(公告)日：2020-09-29

申请号：US16392000

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-woo Kim ,  Hyun-ho Noh ,  Yong-seung Kim ,  Dong-suk Shin ,  Kwan-heum Lee ,  Yu-yeong Jo

IPC: H01L29/161 ,  H01L29/08 ,  H01L29/78 ,  H01L29/04 ,  H01L29/167

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

公开(公告)号：US10304932B2

公开(公告)日：2019-05-28

申请号：US15871374

申请日：2018-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-woo Kim ,  Hyun-ho Noh ,  Yong-seung Kim ,  Dong-suk Shin ,  Kwan-heum Lee ,  Yu-yeong Jo

IPC: H01L29/80 ,  H01L21/00 ,  H01L29/161 ,  H01L29/08 ,  H01L29/78 ,  H01L29/04 ,  H01L29/167

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.