公开(公告)号：US20230018819A1

公开(公告)日：2023-01-19

申请号：US17933872

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongsue Kim ,  Dongwan Kim ,  Hwanseok Seo

IPC: G03F1/26 ,  G03F1/24

Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

公开(公告)号：US11527247B2

公开(公告)日：2022-12-13

申请号：US17123649

申请日：2020-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongwan Kim

IPC: G10L15/00 ,  G10L15/22 ,  G10L15/02 ,  G10L15/06 ,  G10L15/08

Abstract: Provided are a computing device and a method of operating the same. The computing device may include a memory storing one or more instructions, and a processor configured to execute the one or more instructions stored in the memory to recognize a trigger word for another voice assistant, and analyze a response of the other voice assistant to a speech given to the other voice assistant. The computing device simulates an operation performed to correspond to the speech, and performs a subsequent operation, based on a result of the simulating and a result of the analyzing of the response of the other voice assistant.

公开(公告)号：US11774846B2

公开(公告)日：2023-10-03

申请号：US17933872

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongsue Kim ,  Dongwan Kim ,  Hwanseok Seo

IPC: G03F1/26 ,  G03F1/24

CPC classification number: G03F1/26 ,  G03F1/24

Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

公开(公告)号：US11487197B2

公开(公告)日：2022-11-01

申请号：US17120480

申请日：2020-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongsue Kim ,  Dongwan Kim ,  Hwanseok Seo

IPC: G03F1/26 ,  G03F1/24

Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

公开(公告)号：US12288555B2

公开(公告)日：2025-04-29

申请号：US17944618

申请日：2022-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonju Lee ,  Dongwan Kim ,  Juwhan Kim ,  Yoonjae Park

IPC: G10L15/22 ,  G06F3/16 ,  G06F40/30 ,  G10L15/18

Abstract: An electronic device receives a voice input, and determines whether the voice input is matched with a natural language understanding (NLU) model for determining the presence or absence of a verb. The electronic device further identifies a display context object associated with the voice input based on the voice input being matched with the NLU model. The electronic device calculates a similarity value between the voice input and the display context object, and update a user interface (UI) depending on the calculated the similarity values.

公开(公告)号：US20250132133A1

公开(公告)日：2025-04-24

申请号：US18640999

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisoo Im ,  Dongwan Kim ,  Minsung Kim ,  Siyoung Koh ,  Younseon Wang ,  Junho Im

IPC: H01J37/32 ,  H01J37/08

Abstract: A substrate processing apparatus comprises a process chamber, a stage in the process chamber, the stage supporting a substrate, and a grid in the process chamber and upwardly spaced apart from the stage. The grid includes a dielectric plate having a central axis that extends in a first direction, a first electrode plate embedded in the dielectric plate, a second electrode plate downwardly spaced apart from the first electrode plate and embedded in the dielectric plate, and a third electrode plate downwardly spaced apart from the second electrode plate and embedded in the dielectric plate.

公开(公告)号：US20230081831A1

公开(公告)日：2023-03-16

申请号：US17863843

申请日：2022-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwan Kim ,  Jeong-Hyun Kim ,  Seung-Hyeok An ,  Saya Lee ,  Yoong Chung ,  Jiho Jeon ,  Yongjun Cho ,  Injun Choi

IPC: F16L59/02 ,  F16L59/14 ,  F16L59/10

Abstract: Insulation structures, insulated piping devices including the same, and methods of fabricating the same are disclosed. The insulation structure includes a first insulation layer on an outer surface of a pipe, a second insulation layer on an outer surface of the first insulation layer that includes a material different from a material of the first insulation layer, and a third insulation layer on an outer surface of the second insulation layer that includes a material different from the material of the second insulation layer. A thickness of the second insulation layer is greater than a thickness of the first insulation layer and a thickness of the third insulation layer. The second insulation layer includes a porous foam.

公开(公告)号：US11600275B2

公开(公告)日：2023-03-07

申请号：US17102959

申请日：2020-11-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwan Kim

IPC: G10L15/22 ,  G10L15/08 ,  G10L15/06

Abstract: An electronic device performing voice recognition on user utterance based on first voice assistance. The electronic device may receive information on recognition characteristic of second voice assistance for user utterance from an external device and adjust recognition characteristic of the first voice assistance based on the information on the recognition characteristic of the second voice assistance.