公开(公告)号：US20150221517A1

公开(公告)日：2015-08-06

申请号：US14613822

申请日：2015-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-mi Kim ,  Un-byoung Kang ,  Tae-je Cho ,  Jung-seok Ahn

IPC: H01L21/306 ,  H01L21/768 ,  H01L21/304 ,  H01L21/78

CPC classification number: H01L21/304 ,  C09J7/22 ,  C09J7/30 ,  C09J2201/36 ,  C09J2203/326 ,  C09J2433/00 ,  C09J2463/00 ,  H01L21/30604 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L21/78 ,  H01L24/03 ,  H01L24/06 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16238 ,  H01L2224/16245 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device capable of thinning a semiconductor chip can be performed while preventing the semiconductor chip from being damaged. A method of manufacturing a semiconductor device includes: preparing a semiconductor substrate including a plurality of semiconductor chips, attaching the semiconductor substrate to a support substrate with an adhesive support film, removing an edge region of the semiconductor substrate together with a portion of the adhesive support film between the edge region of the semiconductor substrate and the support substrate and, thereafter, polishing the semiconductor substrate to thin the semiconductor substrate.

Abstract translation: 可以在防止半导体芯片损坏的同时进行制造能够使半导体芯片变薄的半导体器件的制造方法。 一种制造半导体器件的方法包括：制备包括多个半导体芯片的半导体衬底，用粘合剂支撑膜将半导体衬底附着到支撑衬底上，与粘合剂支撑体的一部分一起去除半导体衬底的边缘区域 在半导体衬底的边缘区域和支撑衬底之间形成薄膜，然后对半导体衬底进行抛光以使半导体衬底变薄。